Defect Engineering of BCZT–based Piezoelectric Ceramics with High Piezoelectric Properties

2021 ◽  
Author(s):  
Xinjian Wang ◽  
Yu Huan ◽  
Yixuan Zhu ◽  
Peng Zhang ◽  
Wenlong Yang ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Conduction Mechanism ◽  
Piezoelectric Properties ◽  
Hole Concentration ◽  
Impedance Analysis ◽  
Defect Engineering ◽  
Intrinsic Conduction ◽  
P Type ◽  
Mn Doped

Abstract The intrinsic conduction mechanism and optimal sintering atmosphere of (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 (BCZT) ceramics was regulated by doping Mn element in this work. By Hall and impedance analysis, the undoped BCZT ceramics exhibit a typical n–type conduction mechanism, and the electron concentration decreases with the increasing oxygen partial pressure. Therefore, the undoped ceramics exhibit best electrical properties (d33 = 585 pC/N, kp = 56%) in O2. A handful of Mn doping element would transfer the conduction mechanism from n-type into p–type. And the hole concentration reduces with the decreasing oxygen partial pressure for Mn-doped BCZT ceramics. Therefore, the Mn-doped ceramics sintered in N2 have the highest insulation resistance and best piezoelectric properties (d33 = 505 pC/N, kp = 50%). The experimental results demonstrate that the doping Mn element can effectively adjusts the intrinsic conduction mechanism and then predicts the optimal atmosphere.

scholarly journals Defect engineering of BCZT-based piezoelectric ceramics with high piezoelectric properties

2021 ◽  
Vol 11 (1) ◽  
pp. 184-195
Author(s):  
Xinjian Wang ◽  
Yu Huan ◽  
Yixuan Zhu ◽  
Peng Zhang ◽  
Wenlong Yang ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Conduction Mechanism ◽  
Piezoelectric Properties ◽  
Hole Concentration ◽  
Doping Element ◽  
Mn Doping ◽  
Mechanical Coupling ◽  
Intrinsic Conduction ◽  
Mn Doped

AbstractThe intrinsic conduction mechanism and optimal sintering atmosphere of (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 (BCZT) ceramics were regulated by Mn-doping element in this work. By Hall and impedance analysis, the undoped BCZT ceramics exhibit a typical n-type conduction mechanism, and the electron concentration decreases with the increasing oxygen partial pressure. Therefore, the undoped ceramics exhibit best electrical properties (piezoelectrical constant d33 = 585 pC·N−1, electro-mechanical coupling factor kp = 56%) in O2. A handful of Mn-doping element would transfer the conduction mechanism from n-type into p-type. And the hole concentration reduces with the decreasing oxygen partial pressure for Mn-doped BCZT ceramics. Therefore, the Mn-doped ceramics sintered in N2 have the highest insulation resistance and best piezoelectric properties (d33 = 505 pC·N−1, kp = 50%). The experimental results demonstrate that the Mn-doping element can effectively adjust the intrinsic conduction mechanism and then predict the optimal atmosphere.

Effect of Growth Condition on the Electrical and Magnetic Properties of Sputtered ZnCo2O4 Films

2004 ◽  
Vol 449-452 ◽  
pp. 509-512 ◽  
Author(s):  
Hyun Jung Kim ◽  
In Chang Song ◽  
Jae Ho Sim ◽  
Hyo Jin Kim ◽  
Do Jin Kim ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Hole Concentration ◽  
Pressure Ratio ◽  
Antiferromagnetic Coupling ◽  
Ferromagnetic Transition ◽  
Electrical And Magnetic Properties ◽  
P Type ◽  
Partial Pressure Ratio

We report on the effect of the oxygen partial pressure ratio in the sputtering gas mixture on the electrical and magnetic properties of cubic spinel ZnCo2O4 thin films grown by reactive magnetron sputtering. The conduction type and carrier concentration in ZnCo2O4 films were found to be dependent on the oxygen partial pressure ratio. The maximum electron and hole concentration at 300 K were estimated to be as high as 1.37 × 1020 cm-3 and 2.81 × 1020 cm-3, respectively. While an antiferromagnetic coupling was found for n-type ZnCo2O4, a ferromagnetic interaction was observable in p-type ZnCo2O4, indicating hole-induced ferromagnetic transition in spinel ZnCo2O4.

Design of p‐type NKN‐based piezoelectric ceramics sintered in low oxygen partial pressure by defect engineering

2020 ◽  
Vol 103 (6) ◽  
pp. 3667-3675 ◽  
Author(s):  
Zhenxing Wang ◽  
Yu Huan ◽  
Yue Feng ◽  
Yu Qiu ◽  
Tao Wei ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Piezoelectric Ceramics ◽  
Low Oxygen ◽  
Defect Engineering ◽  
P Type

Electrical Properties of Donor and Acceptor Doped Gd2Ti2O7

1994 ◽  
Vol 369 ◽  
Author(s):  
Igor Kosacki ◽  
Harry L. Tuller
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Conductivity Measurements ◽  
Donor And Acceptor ◽  
Mn Doped

The results of electrical conductivity measurements on Nb, W, and Mn-doped Gd2Ti2O7 are presented. A correlation between electrical conductivity, the oxygen partial pressure and type of dopants has been obtained. The source of the different PO2 dependence for Mn-doped material is discussed.

Synthesis and Properties of the High Tc Bi-Pb-Sr-Ca-Cu-O Superconductors

1989 ◽  
Vol 156 ◽  
Author(s):  
Utako Endo ◽  
J. Koyama ◽  
T. Kawai ◽  
N. Okazaki ◽  
K. Kitazawa ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Hole Concentration ◽  
Composition Analysis ◽  
Low Oxygen ◽  
High Tc ◽  
Atomic Site ◽  
High Tc Phase

ABSTRACTA single high Tc phase of Bi-Pb-Sr-Ca-Cu-O superconductor was obtained by following proper synthetic conditions:(a)addition of Pb, (b)proper starting composition, (c)codecomposition method, (d)sintering under low oxygen partial pressure and (e)long sintering. The composition analysis showed that every atomic site might be occupied by some element and there might not be defects or excess atoms in the structure. The hole donor in these samples is considered to be Pb on the Bi site and hole concentration seems to be, to some extent, controlled by the Pb content. A phase with four CuO2 layers have possibly grown on the surface of the grains of thi high Tc phase.

Tunable Performance of P-Type Cu2O/SnO Bilayer Thin Film Transistors

2014 ◽  
Vol 93 ◽  
pp. 260-263
Author(s):  
H.A. Al-Jawhari ◽  
J.A. Caraveo-Frescas ◽  
M.N. Hedhili
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Device Performance ◽  
P Type ◽  
Bottom Gate

Novel tunable p-type thin film transistors (TFTs) were developed by adopting Cu2O/SnO bilayer channel scheme. Using Cu2O film produced at a relative oxygen partial pressure Opp of 10% - as an upper layer - and 3% Opp SnO films - as lower layers - we built a matrix of bottom gate Cu2O/SnO bilayer TFTs with different thicknesses. We found that the thickness of the Cu2O layer plays a major role in the oxidization process exerted onto the SnO layer underneath. The thicker the Cu2O layer the more the underlying SnO layer is oxidized, and hence, the more the transistor mobility is enhanced at a certain temperature. Both the device performance and the required annealing temperature could then be tuned by controlling the thickness of each layer of the Cu2O/SnO bilayer TFT.

scholarly journals Electrical and Magnetic Properties of Polycrystalline Mn-Doped BaTiO3 Thin Films Grown on Pt/Sapphire Substrates by Pulsed Laser Deposition

2010 ◽  
Vol 67 ◽  
pp. 212-217 ◽  
Author(s):  
Yao Shuai ◽  
Sheng Qiang Zhou ◽  
Heidemarie Schmidt
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Magnetic Polaron ◽  
Low Oxygen ◽  
Sapphire Substrates ◽  
Mn Doped

5 at.% Mn-doped and undoped, 200 nm thick BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on Pt/sapphire substrates. X-ray diffraction (XRD) measurements reveal the same polycrystalline single-phase perovskite structure for all the thin films despite the different oxygen partial pressure, while their preferred orientation strongly depends on the oxygen partial pressure. The 5 at. % Mn-doping decreases the dielectric loss of the Mn-doped BaTiO3 thin films, however, their relative permittivity is also decreased. Ferroelectricity has been probed on the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. A ferromagnetic coupling of the Mn dopant ions has been probed at room tempetature on the Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure and is understood in terms of the bound magnetic polaron model.

Sign in / Sign up

Export Citation Format

Share Document