A numerical investigation on flame stability of oxy-coal combustion: Effects of blockage ratio, swirl number, recycle ratio and partial pressure ratio of oxygen

2017 ◽  
Vol 57 ◽  
pp. 63-72 ◽  
Author(s):  
Jingzhang Liu ◽  
Zhaohui Liu ◽  
Sheng Chen ◽  
Stanley Ong Santos ◽  
Chuguang Zheng
Keyword(s):  
Partial Pressure ◽  
Numerical Investigation ◽  
Coal Combustion ◽  
Pressure Ratio ◽  
Flame Stability ◽  
Blockage Ratio ◽  
Swirl Number ◽  
Recycle Ratio ◽  
Partial Pressure Ratio

Microstructure and Properties of TiAlN Compound Films Fabricated on AZ91D Alloy by Magnetron Sputtering

2011 ◽  
Vol 686 ◽  
pp. 589-594 ◽  
Author(s):  
Sheng Lu ◽  
Liang Wen Wu ◽  
Jing Chen
Keyword(s):  
Corrosion Resistance ◽  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Pressure Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructure And Properties ◽  
Az91d Magnesium Alloy ◽  
Hydrophobic Nature ◽  
Partial Pressure Ratio

By means of reaction magnetron sputtering, TiAlN ternary compound films were deposited on AZ91D magnesium alloy substrates. The influence of partial pressure ratio of N2 to Ar (N2/Ar) on the microstructure and properties of TiAlN film was explored with scanning electron microscopy (SEM), X-ray diffraction (XRD), and tests of microhardness, hydrophile and corrosion resistance. The results show that with the increase of N2/Ar partial pressure ratio from 0.5:10 to 1.5:10, Ti2N becomes the main film phase and the size of the crystals cluster decreases. As the N2/Ar ratio is as higher as 2:10, the film crystals change from Ti2N to TiN with coarse clusters. With increase of N2/Ar rate, the hardness, hydrophobic nature and corrosion resistance of the TiAlN film tend to increase.

scholarly journals Growth Properties of Sputtered ZnO Thin Films Affected by Oxygen Partial Pressure Ratio

2008 ◽  
Vol 17 (3) ◽  
pp. 204-210 ◽  
Author(s):  
Man-Il Kang ◽  
Moon-Won Kim ◽  
Yong-Gi Kim ◽  
Ji-Wook Ryu ◽  
Han-O Jang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Ratio ◽  
Zno Thin Films ◽  
Growth Properties ◽  
Partial Pressure Ratio

Nitrogen partial pressure-dependent Mg concentration, structure, and optical properties of MgxZn1−xO film grown by magnetron sputtering

2007 ◽  
Vol 22 (10) ◽  
pp. 2936-2942 ◽  
Author(s):  
C.X. Cong ◽  
B. Yao ◽  
Y.P. Xie ◽  
G.Z. Xing ◽  
B.H. Li ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Band Gap ◽  
Pressure Ratio ◽  
Nitrogen Concentration ◽  
Cubic Phase ◽  
Nitrogen Partial Pressure ◽  
Wurtzite Phase ◽  
Quartz Substrates ◽  
Partial Pressure Ratio

MgxZn1−xO films were grown on quartz substrates at 773 K by using radio frequency magnetron sputtering with a mixture of argon and nitrogen as sputtering gases. The nitrogen concentration in the mixture is characterized by the nitrogen partial pressure ratio, which is determined by the ratio of nitrogen flow rate to the flow rates of nitrogen and argon. It was found that Mg concentration, structure, and band gap of the MgxZn1−xO film could be tuned by changing the nitrogen partial pressure ratio of the sputtering gases. The Mg concentration in the MgxZn1−xO film increases with increasing nitrogen partial pressure ratio. The MgxZn1−xO film consists of wurtzite phase at the ratios from 0% to 50%, mixture of wurtzite and cubic phases at the ratios between 50% and 83%, and cubic phase at 100%. The band gap of the MgxZn1−xO film with wurtzite and cubic structure increases as the ratio rises. The variation of the structure and band gap is attributed to change of the Mg concentration, which results from loss of the O and Zn atoms during growth process, the former is induced by reaction between N and O, and the latter by re-evaporation of Zn atoms due to high substrate temperature. The mechanism of the loss of the O and Zn atoms is discussed based on thermodynamics.

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