Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 449-452 ◽  
Author(s):  
Marcin Zielinski ◽  
Carole Balloud ◽  
Sandrine Juillaguet ◽  
Bernard Boyer ◽  
Véronique Soulière ◽  
...  
Keyword(s):  
Low Temperature ◽  
Calibration Curve ◽  
Excitation Power ◽  
Power Dependence ◽  
Photoluminescence Spectra ◽  
Systematic Comparison ◽  
Al Content ◽  
Empirical Calibration ◽  
Excitation Conditions ◽  
Low Temperature Photoluminescence

Recently, a systematic comparison of SIMS measurements with LTPL (Low Temperature Photoluminescence) spectra led us to propose a straightforward empirical calibration of the LTPL intensity versus Al content in 4H-SiC samples. In the present work we analyze the effect of the LTPL excitation power on the intensity of the Al-related features. We examine the influence of the excitation conditions on the calibration curve and determine the limitations of the method.

Excitation Power Dependence of Photoluminescence in CIB and FIB Implanted Superlattices

1991 ◽  
Vol 240 ◽  
Author(s):  
A. G. Choo ◽  
H. E. Jackson ◽  
P. Chen ◽  
A. J. Steckl ◽  
V. Gupta ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Peak Position ◽  
Excitation Power ◽  
Excitation Intensity ◽  
Power Dependence ◽  
Photoluminescence Spectra ◽  
Multiple Scan ◽  
Donor Acceptor ◽  
Low Temperature Photoluminescence

ABSTRACTLow temperature photoluminescence spectra have been used to characterize conventional ion beam (CIB) and focused ion beam (FIB) implanted superlattices. The excitation dependence of the single scan FIB is found to be significantly different from CIB and multiple scan FIB implantations which are similar. The peak position of the donor-acceptor transition is observed to change to higher energies significantly slower with excitation intensity for the single scan FIB case when compared to the multiple scan FIB and CIB cases. Simple models to describe these effects are briefly discussed.

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 437-440 ◽  
Author(s):  
John W. Steeds
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Carbon Vacancy ◽  
Low Temperature Photoluminescence

A common set of optical centres found in photoluminescence spectra of electron irradiated 4H SiC is interpreted as originating in neutral carbon-vacancy carbon anti-site pairs.

X, l, and γ lines in low temperature photoluminescence spectra ofal0.47Ga0.53As0.035Sb0.965 alloys

1996 ◽  
Vol 196 (2) ◽  
pp. 453-460
Author(s):  
P. Tronc ◽  
H. Mani ◽  
R. Maciejko ◽  
B. Reid ◽  
M. Leroux ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectra ◽  
Low Temperature Photoluminescence

Investigation of Roughness at InP/InAs Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Growth Temperature ◽  
Interface Roughness ◽  
Chemical Beam Epitaxy ◽  
Photoluminescence Spectra ◽  
Multiple Line ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

Low Temperature Photoluminescence Spectra of Ga0.77In0.23As0.19SB0.81 Compounds

1993 ◽  
Vol 180 (2) ◽  
pp. K87-K91 ◽  
Author(s):  
P. Tronc ◽  
B. Reid ◽  
H. Mani ◽  
R. MacIejko ◽  
A. N. Titkov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectra ◽  
Low Temperature Photoluminescence
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