Organic Materials for Active Layers in Transistors: Study of the Electrical Stability Properties

Field effect transistors based on several conjugated organic materials were fabricated and assesed in terms of electrical stability. The device characteristics were studied using steady state measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence for an electrical instability occurring above 200 K that is caused by an electronic trapping process. It is suggested that the trapping sites are created by a change in the organic conjugated chain, a process similar to a phase transition.

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Temperature-dependent degradation mechanisms of channel mobility in ZrO2-gated n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2211307 ◽

2006 ◽

Vol 88 (24) ◽

pp. 242905 ◽

Cited By ~ 6

Author(s):

Ming-Tsong Wang ◽

Bonds Yi-Yi Cheng ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Temperature Dependent ◽

Channel Mobility

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A latent pigment strategy for robust active layers in solution-processed, complementary organic field-effect transistors

Journal of Materials Chemistry C ◽

10.1039/c7tc03938g ◽

2017 ◽

Vol 5 (44) ◽

pp. 11522-11531 ◽

Cited By ~ 3

Author(s):

Isis Maqueira-Albo ◽

Giorgio Ernesto Bonacchini ◽

Giorgio Dell'Erba ◽

Giuseppina Pace ◽

Mauro Sassi ◽

...

Keyword(s):

Small Molecule ◽

Field Effect ◽

Field Effect Transistors ◽

Solution Processing ◽

Organic Field Effect Transistors ◽

Solution Processed ◽

Active Layers ◽

Thermal Cleavage

A latent pigment approach enables solution-processing of small molecule films that are insoluble in aggressive solvents upon thermal cleavage of solubilizing groups.

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Semiconducting Properties of Organic Materials. Critical Analysis of Field-Effect Transistors

Electronic Properties of Polymers - Springer Series in Solid-State Sciences ◽

10.1007/978-3-642-84705-9_83 ◽

1992 ◽

pp. 458-465 ◽

Cited By ~ 1

Author(s):

F. Garnier ◽

G. Horowitz ◽

D. Fichou

Keyword(s):

Critical Analysis ◽

Field Effect ◽

Organic Materials ◽

Field Effect Transistors ◽

Semiconducting Properties

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Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.620 ◽

2020 ◽

Vol 1004 ◽

pp. 620-626

Author(s):

Hironori Takeda ◽

Mitsuru Sometani ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Hiroshi Yano ◽

...

Keyword(s):

Hall Effect ◽

Field Effect ◽

Elevated Temperatures ◽

Field Effect Transistors ◽

Free Carrier ◽

Oxide Semiconductor ◽

Thermal Excitation ◽

Temperature Dependent ◽

Conduction Mechanisms ◽

The Impact

Temperature-dependent Hall effect measurements were conducted to investigate the channel conduction mechanisms of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). This method allows us to discriminate the impact of the density of mobile (free) carriers in the inversion channels and their net mobility on the performance of SiC MOSFETs. It was found that, while the free carrier ratio of SiC MOSFETs with conventional gate oxides formed by dry oxidation is below 4% at 300 K, increasing the free carrier ratio due to thermal excitation of trapped electrons from SiO2/SiC interfaces leads to an unusual improvement in the field-effect mobility of SiC MOSFETs at elevated temperatures. Specifically, a significant increase in free carrier density surpasses the mobility degradation caused by phonon scattering for thermally grown SiO2/SiC interfaces. It was also found that, although nitrogen incorporation in SiO2/SiC interfaces increases the free carrier ratio typically up to around 30%, introduction of an additional scattering factor associated with interface nitridation compensates for the moderate amount of thermally generated mobile carriers at high temperatures, indicating a fundamental drawback of nitridation of SiO2/SiC interfaces. On the basis of these findings, we discuss the channel conduction mechanisms of SiC MOSFETs.

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Channel length-dependent characterisations of organic thin-film transistors with solution processable gadolinium phthalocyanine derivatives

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-019-02486-4 ◽

2019 ◽

Vol 31 (1) ◽

pp. 265-273 ◽

Cited By ~ 1

Author(s):

Seema Barard ◽

Debdyuti Mukherjee ◽

Sujoy Sarkar ◽

T. Kreouzis ◽

I. Chambrier ◽

...

Keyword(s):

Field Effect ◽

Liquid Crystalline ◽

Field Effect Transistors ◽

Channel Length ◽

Organic Field Effect Transistors ◽

Organic Thin Film ◽

Active Layers ◽

Order Of Magnitude ◽

Scaling Down ◽

Voltage Swing

AbstractSpin-coated 52-nm-thick films of newly synthesised gadolinium liquid crystalline bisphthalocyanine sandwich (GdPc2) complexes with octyl chains non-peripheral positions have been successfully employed as active layers for bottom-gate organic field effect transistors having both short $$(5\,\upmu {\text{m}})$$(5μm) and long $$( 20\,\upmu {\text{m}})$$(20μm) channels. The scaling down of the channel length $$( L )$$(L) decreases the field effect mobility due to the increase in the contact resistance between the gold electrodes and the GdPc2 semiconducting layer. Values of on–off ratio and sub-threshold voltage swing are higher nearly one order of magnitude for $$L = 5 \,\upmu{\text{ m}}$$L=5μm than those for $$L = 20\;\upmu m$$L=20μm.

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