Temperature dependent carrier mobility in organic field-effect transistors: The role of dielectrics

2019 ◽  
Vol 125 (3) ◽  
pp. 035501 ◽  
Author(s):  
A. Laudari ◽  
S. Guha
2012 ◽  
Vol 101 (24) ◽  
pp. 243302 ◽  
Author(s):  
Yasuhiro Mashiko ◽  
Dai Taguchi ◽  
Martin Weis ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto

2018 ◽  
Vol 5 (2) ◽  
pp. 1800547 ◽  
Author(s):  
Zongrui Wang ◽  
Ye Zou ◽  
Wangqiao Chen ◽  
Yinjuan Huang ◽  
Changjiang Yao ◽  
...  

2020 ◽  
Vol 11 (4) ◽  
pp. 1466-1472 ◽  
Author(s):  
Qijing Wang ◽  
Sai Jiang ◽  
Bowen Zhang ◽  
Eul-Yong Shin ◽  
Yong-Young Noh ◽  
...  

2015 ◽  
Vol 51 (3) ◽  
pp. 503-506 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Wenhua Zhang ◽  
Shiqiang Bai ◽  
Kuo-Wei Huang ◽  
...  

Two stable dianthraceno[a,e]pentalenes were synthesized and DAP2 exhibited a high charge carrier mobility of 0.65 cm2 V−1 s−1 due to its dense packing.


2010 ◽  
Vol 1270 ◽  
Author(s):  
Mujeeb Ullah ◽  
Andrey K. Kadashchuk ◽  
Philipp Stadler ◽  
Alexander Kharchenko ◽  
Almantas Pivrikas ◽  
...  

AbstractThe critical factor that limits the efficiencies of organic electronic devices is the low charge carrier mobility which is attributed to disorder in organic films. In this work we study the effects of active film morphology on the charge transport in Organic Field Effect Transistors (OFETs). We fabricated the OFETs using different substrate temperature to grow different morphologies of C60 films by Hot Wall Epitaxy. Atomic Force Microscopy images and XRD results showed increasing grain size with increasing substrate temperature. An increase in field effect mobility was observed for different OFETs with increasing grain size in C60 films. The temperature dependence of charge carrier mobility in these devices followed the empirical relation named as Meyer-Neldel Rule and showed different activation energies for films with different degree of disorder. A shift in characteristic Meyer-Neldel energy was observed with changing C60 morphology which can be considered as an energetic disorder parameter.


2011 ◽  
Vol 110 (10) ◽  
pp. 104513 ◽  
Author(s):  
Yong Xu ◽  
Mohamed Benwadih ◽  
Romain Gwoziecki ◽  
Romain Coppard ◽  
Takeo Minari ◽  
...  

2007 ◽  
Vol 31 ◽  
pp. 4-6 ◽  
Author(s):  
Harry L. Kwok

Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature.


2007 ◽  
Vol 19 (14) ◽  
pp. 1864-1868 ◽  
Author(s):  
K. Oikawa ◽  
H. Monobe ◽  
K. Nakayama ◽  
T. Kimoto ◽  
K. Tsuchiya ◽  
...  

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