Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers

This paper concerns the structural and optical properties of the group III-V semiconductor alloy, indium gallium nitride (InGaN). We focus on the reasons of interest to study InGaN. Recent advances regarding the basic understanding (ex. accurate composition determination) and some yet unclear issues (ex. phase separation) regarding this material system, are also briefly discussed. Illustrative results on the light emitting and structural properties are presented.

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Morphological and electro-optical characterization of an ultrasonic spray coated electron injection and transport layer for organic light emitting diodes

Organic and Hybrid Light Emitting Materials and Devices XXV ◽

10.1117/12.2593913 ◽

2021 ◽

Author(s):

Wim Deferme ◽

Rachith S. N. Kumar ◽

Inge Verboven ◽

Melissa Van Landeghem ◽

Hilde Pellaers ◽

...

Keyword(s):

Light Emitting Diodes ◽

Electron Injection ◽

Optical Characterization ◽

Organic Light Emitting Diodes ◽

Transport Layer ◽

Light Emitting ◽

Ultrasonic Spray ◽

Organic Light

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Spectral and nonlinear optical characterization of blue light emitting gahnite nanorods synthesized through radiation assisted sol gel method

Solid State Sciences ◽

10.1016/j.solidstatesciences.2019.105947 ◽

2019 ◽

Vol 96 ◽

pp. 105947

Author(s):

P.J. Joffy ◽

V.G. Sreeja ◽

Sebin Devasia ◽

E.I. Anila

Keyword(s):

Blue Light ◽

Nonlinear Optical ◽

Sol Gel ◽

Optical Characterization ◽

Light Emitting ◽

Gel Method ◽

Sol Gel Method

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Structure, morphology and optical characterization of Dy 3+ -doped BaYF 5 nanocrystals for warm white light emitting devices

Optical Materials ◽

10.1016/j.optmat.2017.05.002 ◽

2017 ◽

Vol 70 ◽

pp. 16-24 ◽

Cited By ~ 20

Author(s):

P. Haritha ◽

I.R. Martín ◽

C.S. Dwaraka Viswanath ◽

N. Vijaya ◽

K. Venkata Krishnaiah ◽

...

Keyword(s):

White Light ◽

Optical Characterization ◽

Light Emitting ◽

Light Emitting Devices ◽

Warm White Light ◽

Structure Morphology

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Synthesis and characterization of group III-V semiconductor clusters: gallium phosphide GaP in zeolite Y

Journal of the American Chemical Society ◽

10.1021/ja00202a047 ◽

1989 ◽

Vol 111 (20) ◽

pp. 8006-8007 ◽

Cited By ~ 67

Author(s):

J. E. Mac Dougall ◽

H. Eckert ◽

G. D. Stucky ◽

N. Herron ◽

Y. Wang ◽

...

Keyword(s):

Gallium Phosphide ◽

Zeolite Y ◽

Synthesis And Characterization ◽

Group Iii ◽

Semiconductor Clusters ◽

Group Iii V Semiconductor

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Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2010.10.008 ◽

2010 ◽

Vol 13 (3) ◽

pp. 180-184 ◽

Cited By ~ 5

Author(s):

Hyunsoo Kim ◽

Sung-Nam Lee ◽

Jaehee Cho

Keyword(s):

Flip Chip ◽

Light Emitting Diodes ◽

Optical Characterization ◽

Light Emitting

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Submicrometre resolved optical characterization of green nanowire-based light emitting diodes

Nanotechnology ◽

10.1088/0957-4484/22/34/345705 ◽

2011 ◽

Vol 22 (34) ◽

pp. 345705 ◽

Cited By ~ 53

Author(s):

A-L Bavencove ◽

G Tourbot ◽

J Garcia ◽

Y Désières ◽

P Gilet ◽

...

Keyword(s):

Light Emitting Diodes ◽

Optical Characterization ◽

Light Emitting

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Study of Structural and Optical Properties of Non-Oxide Se90Cd10–xSbx(2 ≤ x ≤ 8) Chalcogenide Thin Films

Advanced Science Engineering and Medicine ◽

10.1166/asem.2020.2522 ◽

2020 ◽

Vol 12 (1) ◽

pp. 116-119

Author(s):

Nitesh Shukla ◽

Pravin Kumar Singh ◽

H. P. Pathak ◽

D. K. Dwivedi

Keyword(s):

Thin Films ◽

Thermal Evaporation ◽

Optical Characterization ◽

Structural And Optical Properties ◽

Allowed Transition ◽

Clean Glass Substrate ◽

Amorphous Nature ◽

Evaporation Technique ◽

The Impact

Thin films of Se90Cd10–xSbx (2 ≤ x ≤ 8) of thickness 0.4 microns were prepared on ultra-clean glass substrate by thermal evaporation technique. The vacuum level was 10–6 torr. This paper intends to investigate the impact of Sb concentration on the optical characterization. XRD measurement has been done to investigate the Structural characterization of the prepared thin films. XRD result indicates the prepared thin have amorphous nature. To analyze the optical characterization of the thin films the absorption spectra were recorded over 400–1100 nm wavelength range. In the present study the optical absorption follows direct allowed transition. An increase in photon energy causes an increase in absorption coefficient while extinction coefficient has been found to increase with an increase in frequency of the photons i.e., deceases with increase of wavelength. Optical bandgap (Eg) of thin films have been studied and an increase in it has been recorded with increasing Sb concentration.

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