Fast Non-Contact Dielectric Characterization for SiC MOS Processing
2006 ◽
Vol 527-529
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pp. 1035-1038
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Keyword(s):
Non-contact corona-voltage metrology is utilized to characterize as-grown thermal oxide films on 4H SiC substrates. Contact potential difference mapping is coupled with incremental application of corona charge to provide whole-wafer images of process related effects and multiplepoint capacitance-voltage characteristics respectively. Correspondence between wafer VCPD images and process details is suggested along with examples of fast electrical dielectric thickness determination and non-contact C-V characteristic acquisition.
Keyword(s):
2004 ◽
Vol 22
(4)
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pp. 1488-1492
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Keyword(s):
Keyword(s):
2017 ◽
pp. 133-140
Keyword(s):
2001 ◽
Vol 22
(6)
◽
pp. 657-662
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Keyword(s):