Measurement of the contact potential difference with an electrostatic force microscope

2001 ◽  
Vol 22 (6) ◽  
pp. 657-662 ◽  
Author(s):  
R Rousier ◽  
P Vairac ◽  
B Cretin
Keyword(s):  
Electrostatic Force ◽  
Contact Potential Difference ◽  
Potential Difference ◽  
Contact Potential

scholarly journals Electron work function in individual multi-walled carbon nanotubes doped with nitrogen and boron

2020 ◽  
pp. 87-92
Author(s):  
N. A. Davletkildeev ◽  
◽  
D. V. Sokolov ◽  
E. Yu. Mosur ◽  
I. A. Lobov ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electrostatic Force ◽  
Contact Potential Difference ◽  
Electron Work Function ◽  
Chemical Vapor ◽  
Potential Difference ◽  
Contact Potential ◽  
Force Microscopy ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

Multi-walled undoped and doped with nitrogen and boron carbon nanotubes have been synthesized by chemical vapor deposition. Based on the analysis of images obtained by electrostatic force microscopy at various tip voltage, the value of the external contact potential difference between the tip and individual carbon nanotubes is determined. Using the obtained value of the contact potential difference, the electron work functions for undoped and doped with nitrogen and boron individual carbon nanotubes are calculated, which amounted to 4,7; 4,6 end 5,75 eV, respectively

scholarly journals Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1803
Author(s):  
Zhen Zheng ◽  
Junyang An ◽  
Ruiling Gong ◽  
Yuheng Zeng ◽  
Jichun Ye ◽  
...  
Keyword(s):  
Structural Changes ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Contact Potential Difference ◽  
Potential Difference ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Carrier Lifetimes ◽  
Transmission Electron ◽  
Effective Carrier

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

Determination of the local contact potential difference of PTCDA on NaCl: a comparison of techniques

2009 ◽  
Vol 20 (26) ◽  
pp. 264012 ◽  
Author(s):  
S A Burke ◽  
J M LeDue ◽  
Y Miyahara ◽  
J M Topple ◽  
S Fostner ◽  
...  
Keyword(s):  
Contact Potential Difference ◽  
Potential Difference ◽  
Contact Potential ◽  
Local Contact ◽  
Comparison Of Techniques
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