Nitrogen Ion Beam Irradiation on Amorphous Carbon

2007 ◽  
Vol 539-543 ◽  
pp. 3297-3302
Author(s):  
Yoshihisa Watanabe ◽  
Masami Aono ◽  
Nobuaki Kitazawa

Both bulk and thin film amorphous carbon were irradiated using a nitrogen ion beam and changes in surface roughness and composition after ion beam irradiation have been studied. Amorphous carbon thin films were prepared from toluene vapor using plasma enhanced chemical vapor deposition. Ion irradiation was performed at room temperature using a nitrogen ion beam and the ion beam energy was varied from 0.2 to 1.5 keV under the constant ion current density. Surface morphology was observed with atomic force microscopy (AFM). Depth profiles of nitrogen in the irradiated specimens were analyzed by X-ray photoelectron spectroscopy (XPS). AFM observations reveal that after the ion beam irradiation the surface of the bulk amorphous carbon becomes rough, while the surface of the amorphous carbon films becomes smooth. However, the notable difference in the surface roughness is hardly observed between low- and high-energy ion irradiation. From XPS studies, it is found that the nitrogen concentration near the surface increases after the ion irradiation for both bulk and thin films and irradiated nitrogen ions are combined with carbon, resulting in formation of carbon nitride layers. Depth profiles of nitrogen show that for the bulk specimen low-energy ion irradiation is more effective for the carbon nitride formation than high-energy ion irradiation, while for the thin films high-energy ions are implanted more deeply than low-energy ions.

1983 ◽  
Vol 27 ◽  
Author(s):  
T. Venkatesan ◽  
R. C. Dynes ◽  
B. Wilkens ◽  
A. E. White ◽  
J. M. Gibson ◽  
...  

ABSTRACTThe electrical properties of pyrolyzed polymers have been studied recently.1,2 It has been shown that organic, polymeric3 and non-polymeric4 films can be made conductive (ρ ~ 10−3Ωcm) by ion beam irradiation. Common to all of the films was the presence of carbon as a constituent element and both pyrolysis and ion beam irradiation3 was shown to increase the relative carbon content of the films. The ion beam irradiated organic films 3,4 exhibited a temperature dependence of their resistivity of the form ρ(T) = ρ∞e−(TЛ)*, where ρ is the ion-induced resistivity, ρ∞ and T0 are constants and T is the temperature. At very high doses of irradiation (1017cm−2Ar+@ 2MeV) the film resistivity was temperature independent. Very similar transport properties were observed in the pyrolyzed polymers1 as well, though the lowest resistivities achieved were higher than the resistivity values observed in the ion irradiated3 polymer films. In both the pyrolysis and ion-irradiation experiments the temperature dependence has been explained by a model due to Sheng and Abeles,5 which involves charge transport by hopping between conducting islands embedded in an insulating matrix. Such striking similarities between two distinctly different modes of energy deposition in the films, prompted us to compare the effects of pyrolysis and ion irradiation in different carbon containing films. We compared both a polymer (HPR-204°) and a film of electron beam evaporated carbon film. While in the former case one would observe chemical degradation as well as structural modification, by studying pure carbon films the physical nature of the processes could be clarified. We report metallic carrier densities in both films and evidence for significant structural rearrangement. We conclude that pyrolysis and ion beam irradiation have similar effects on both polymer and carbon films.


2018 ◽  
Vol 27 (3) ◽  
Author(s):  
Hamid Khazaei ◽  
Pirjo S.A. Mäkelä ◽  
Frederick L. Stoddard

Ion beam irradiation is a potential tool for inducing novel mutations in plants. We chose three crop species (rye, linseed, and faba bean) to determine the potential of nitrogen ion beam irradiation for inducing mutations. We tested ion beam irradiation with nitrogen ions at six different fluencies (5×105, 1×106, 5×106, 1×107, 5×107, and 1×108 N-ion cm-2) on dry grains. The three studied crop species had different sensitivities to the irradiation. Increased doses of ion irradiation had more effect on survival than on germination. Rye seedlings had the lowest survival rate at high doses of irradiation and significantly higher off-type plant phenotypes than the other two species. In M1 seedlings, stunted growth, failure to complete the plant life cycle and chlorophyll mutants were observed in all three species. Terminal-inflorescence mutations and sectional chimeras in faba bean were observed in the M2 generation. We conclude that ion beam irradiation is an effective tool for mutation breeding of diverse crop species when the appropriate dose is defined.


2003 ◽  
Vol 792 ◽  
Author(s):  
K. Sun ◽  
T. Ding ◽  
L.M. Wang ◽  
R.C. Ewing

ABSTRACTElectron and ion irradiation-induced nanostructures in an iron phosphate glass with a composition of 45 mol%Fe2O3-55 mol%P2O5 have been characterized by advanced electron microbeam techniques. Analysis by energy-filtered transmission electron microscopy indicated that Fe-rich and P-rich nanophases were formed when the glass was irradiated under a broad (with a diameter of 1.2μm) electron beam [give the dose range]. Phase separation developed with the increase in electron dose (from 1.0×1026e/m2 to 4.8×1026e/m2) as a result of the formation of an Fe-rich phase and pure P-phase. The formation of the Fe-rich and the P-phases are thought to be due to mainly ionization process. Under a low energy ion beam irradiation, Fe/FeO nanoparticles were formed, as confirmed by selected-area electron diffraction analysis. However, no nanoparticles were observed under a high-energy high-dose ion irradiation. The ion beam-irradiation results suggest that the formation of the Fe/FeO nanoparticles was due to preferential sputtering during ion irradiation and that the nanoparticles lie within the surface layers of the glass.


2018 ◽  
Vol 173 (1-2) ◽  
pp. 128-137 ◽  
Author(s):  
T. Santhosh Kumar ◽  
Arun Vinod ◽  
Mahendra Singh Rathore ◽  
A. P. Pathak ◽  
Fouran Singh ◽  
...  

2007 ◽  
Vol 15 (2) ◽  
pp. 113-125 ◽  
Author(s):  
B. Todorović‐Marković ◽  
I. Draganić ◽  
Z. Marković ◽  
Z. Stojanović ◽  
M. Mitrić ◽  
...  

1998 ◽  
Vol 37 (Part 2, No. 10B) ◽  
pp. L1260-L1263 ◽  
Author(s):  
Yun-Sik Jin ◽  
Tetsuya Shibata ◽  
Yoshinobu Matsuda ◽  
Hiroshi Fujiyama

2007 ◽  
pp. 3297-3302
Author(s):  
Yoshihisa Watanabe ◽  
Masami Aono ◽  
Nobuaki Kitazawa

2020 ◽  
Vol 27 (12) ◽  
pp. 2050019 ◽  
Author(s):  
A. ABDEL-GALIL ◽  
A. ATTA ◽  
M. R. BALBOUL

In this paper, we report the influence of low-energy oxygen ion irradiation with fluence ranging from [Formula: see text][Formula: see text][Formula: see text] to [Formula: see text][Formula: see text][Formula: see text] on the structural, optical, and electrical properties of fresh and annealed (400∘C, 3[Formula: see text]h) zinc oxide (ZnO) thin films. These films were grown on soda-lime glass (SLG) substrates using the spin-coating method as a low-cost depositing technique. X-ray diffraction (XRD) study showed the formation of the hexagonal phase of ZnO thin films with preferred orientation along the (002) plane. The crystallite size for fresh and annealed ZnO thin films was in nanoscale and it increased with the annealing temperature. Also, the crystallite size increased with the ion beam irradiation fluence in the case of annealed ZnO films, while it slightly decreased for the fresh ZnO films. The transmittance and absorbance spectra for the ZnO films were investigated in a wide wavelength range. The optical bandgap was specified by using Tauc’s relation. The electrical properties of the ZnO films (fresh and annealed at 400∘C for 3[Formula: see text]h) were studied before and after the oxygen ion beam irradiation. Also, the dielectric properties were investigated with respect to frequency at different ion beam irradiation fluences. The comprehensive results showed the dielectric and optical properties are improved due to the induced conductive networks by oxygen ion irradiation.


Sign in / Sign up

Export Citation Format

Share Document