scholarly journals Ion beam irradiation mutagenesis in rye (Secale cereale L.), linseed (Linum usitatissimum L.) and faba bean (Vicia faba L.)

2018 ◽  
Vol 27 (3) ◽  
Author(s):  
Hamid Khazaei ◽  
Pirjo S.A. Mäkelä ◽  
Frederick L. Stoddard
Keyword(s):  
Faba Bean ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Growth Failure ◽  
Mutation Breeding ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Crop Species ◽  
Linum Usitatissimum L ◽  
Nitrogen Ion

Ion beam irradiation is a potential tool for inducing novel mutations in plants. We chose three crop species (rye, linseed, and faba bean) to determine the potential of nitrogen ion beam irradiation for inducing mutations. We tested ion beam irradiation with nitrogen ions at six different fluencies (5×105, 1×106, 5×106, 1×107, 5×107, and 1×108 N-ion cm-2) on dry grains. The three studied crop species had different sensitivities to the irradiation. Increased doses of ion irradiation had more effect on survival than on germination. Rye seedlings had the lowest survival rate at high doses of irradiation and significantly higher off-type plant phenotypes than the other two species. In M1 seedlings, stunted growth, failure to complete the plant life cycle and chlorophyll mutants were observed in all three species. Terminal-inflorescence mutations and sectional chimeras in faba bean were observed in the M2 generation. We conclude that ion beam irradiation is an effective tool for mutation breeding of diverse crop species when the appropriate dose is defined.

Nitrogen Ion Beam Irradiation on Amorphous Carbon

2007 ◽  
Vol 539-543 ◽  
pp. 3297-3302
Author(s):  
Yoshihisa Watanabe ◽  
Masami Aono ◽  
Nobuaki Kitazawa
Keyword(s):  
Thin Films ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Ion Irradiation ◽  
Ion Beam ◽  
High Energy ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Depth Profiles ◽  
Nitrogen Ion

Both bulk and thin film amorphous carbon were irradiated using a nitrogen ion beam and changes in surface roughness and composition after ion beam irradiation have been studied. Amorphous carbon thin films were prepared from toluene vapor using plasma enhanced chemical vapor deposition. Ion irradiation was performed at room temperature using a nitrogen ion beam and the ion beam energy was varied from 0.2 to 1.5 keV under the constant ion current density. Surface morphology was observed with atomic force microscopy (AFM). Depth profiles of nitrogen in the irradiated specimens were analyzed by X-ray photoelectron spectroscopy (XPS). AFM observations reveal that after the ion beam irradiation the surface of the bulk amorphous carbon becomes rough, while the surface of the amorphous carbon films becomes smooth. However, the notable difference in the surface roughness is hardly observed between low- and high-energy ion irradiation. From XPS studies, it is found that the nitrogen concentration near the surface increases after the ion irradiation for both bulk and thin films and irradiated nitrogen ions are combined with carbon, resulting in formation of carbon nitride layers. Depth profiles of nitrogen show that for the bulk specimen low-energy ion irradiation is more effective for the carbon nitride formation than high-energy ion irradiation, while for the thin films high-energy ions are implanted more deeply than low-energy ions.

Growth of Cu-Oxide Protrusion by Ar Ion Irradiation

2007 ◽  
Vol 558-559 ◽  
pp. 1359-1362 ◽  
Author(s):  
Hiroyuki Tanaka ◽  
Shunichiro Tanaka
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Residual Oxygen ◽  
Irradiation Angle ◽  
Oxygen Atoms

Cu2O conical micron-scale protrusions have been grown on a preoxidized Cu surface by the Ar ion beam irradiation at 9 kV for 5-20 min in the low vacuum. This Ar ion irradiation is based on the ‘Transcription Method’ which has been originated by B.-S. Xu and S.-I. Tanaka in 1996 to form nanoparticles. Ar ion irradiation induced needle-like nanostructures composed of Cu2O and CuO which were randomly nucleated on Cu surface by the oxidation at 623 K for 10 min in the air. The obtained Cu2O conical protrusions have a controllable length of up to 14.6 μm with diameter in the range of 0.8 μm by changing the Ar ion irradiation angle to the surface. The mechanism of the formation of the conical protrusions is proposed that Cu atoms on the Cu surface activated and sputtered by the Ar ion irradiation diffuse on the surface of needle-like oxide as nuclei along the Ar ion track and react with residual oxygen atoms to grow the conical Cu2O protrusions.

Spontaneous formation of nanometer-scale self-organized structures in Ag-Cu alloys under irradiation

2000 ◽  
Vol 647 ◽  
Author(s):  
Raúl A. Enrique ◽  
Pascal Bellon
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Solute Concentration ◽  
Irradiation Temperature ◽  
Nanometer Scale ◽  
Beam Irradiation ◽  
X Ray Diffraction ◽  
Ion Beam Irradiation ◽  
Self Organized ◽  
The One

AbstractIon-beam irradiation can be used as a processing tool to synthesize metastable materials. A particular case is the preparation of solid solutions from immiscible alloys, which have been achieved for a whole range of systems. In this process, enhanced solute concentration is obtained through the local mixing induced by each irradiation event, which if occurring at a high enough frequency, can outweigh demixing by thermal diffusion. The resulting microstructure forms in far from equilibrium conditions, and theoretical results for these kind of driven alloys have shown that novel microstructures exhibiting self-organization can develop. To test these predictions, we prepare Ag-Cu multilayered thin films that we subject to 1 MeV Kr+-ion irradiation at temperatures ranging from room temperature to 225 °C, and characterize the specimens by x-ray diffraction, TEM and STEM. We observe two different phenomena occurring at different length scales: On the one hand, regardless of the irradiation temperature, grains grow under irradiation until reaching a size limited by film thickness (~200 nm). On the other hand, the distribution of species inside the grains is greatly affected by the irradiation temperature. At intermediate temperatures, a semi-coherent decomposition is observed at a nanometer scale. This nanometer-scale decomposition phenomenon appears as an evidence of patterning, and thus confirms on the possibility of using ion-beam irradiation as a route to synthesize nanostructured materials with novel magnetic and optical properties.

scholarly journals Fabrication of Nanopore in MoS2-Graphene vdW Heterostructure by Ion Beam Irradiation and the Mechanical Performance

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 196
Author(s):  
Xin Wu ◽  
Ruxue Yang ◽  
Xiyue Chen ◽  
Wei Liu
Keyword(s):  
Mechanical Performance ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Tensile Tests ◽  
Uniaxial Tensile ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Stacking Order ◽  
Vdw Heterostructure ◽  
Nanopore Structure

Nanopore structure presents great application potential especially in the area of biosensing. The two-dimensional (2D) vdW heterostructure nanopore shows unique features, while research around its fabrication is very limited. This paper proposes for the first time the use of ion beam irradiation for creating nanopore structure in 2D vdW graphene-MoS2 heterostructures. The formation process of the heterostructure nanopore is discussed first. Then, the influence of ion irradiation parameters (ion energy and ion dose) is illustrated, based on which the optimal irradiation parameters are derived. In particular, the effect of stacking order of the heterostructure 2D layers on the induced phenomena and optimal parameters are taken into consideration. Finally, uniaxial tensile tests are conducted by taking the effect of irradiation parameters, nanopore size and stacking order into account to demonstrate the mechanical performance of the heterostructure for use under a loading condition. The results would be meaningful for expanding the applications of heterostructure nanopore structure, and can arouse more research interest in this area.

Photoluminescence enhancement and high accuracy patterning of lead halide perovskite single crystals by MeV ion beam irradiation

2020 ◽  
Vol 8 (29) ◽  
pp. 9923-9930 ◽  
Author(s):  
Milan Palei ◽  
M. Motapothula ◽  
Aniruddha Ray ◽  
Ahmed L. Abdelhady ◽  
Luca Lanzano ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Irradiation ◽  
Ion Beam ◽  
High Accuracy ◽  
Enhancement Effect ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Photoluminescence Enhancement ◽  
Halide Perovskite ◽  
Lead Halide

Using MeV ion irradiation, a PL enhancement effect of MAPbBr3 single crystals is demonstrated.

scholarly journals Significance of Heavy-Ion Beam Irradiation-Induced Avermectin B1a Production by EngineeredStreptomyces avermitilis

2017 ◽  
Vol 2017 ◽  
pp. 1-13
Author(s):  
Shu-Yang Wang ◽  
Yong-Heng Bo ◽  
Xiang Zhou ◽  
Ji-Hong Chen ◽  
Wen-Jian Li ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Streptomyces Avermitilis ◽  
Specific Productivity ◽  
Original Strain ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Heavy Ion Irradiation ◽  
Heavy Ion Beam

Heavy-ion irradiation technology has advantages over traditional methods of mutagenesis. Heavy-ion irradiation improves the mutation rate, broadens the mutation spectrum, and shortens the breeding cycle. However, few data are currently available regarding its effect onStreptomyces avermitilismorphology and productivity. In this study, the influence of heavy-ion irradiation onS. avermitiliswhen cultivated in approximately 10 L stirred-tank bioreactors was investigated. The specific productivity of the avermectin (AVM) B1a-producing mutantS. avermitilis147-G58 increased notably, from 3885 to 5446 μg/mL, approximately 1.6-fold, compared to the original strain. The mycelial morphology of the mutant fermentation processes was microscopically examined. Additionally, protein and metabolite identification was performed by using SDS-PAGE, 2- and 3-dimensional electrophoresis (2DE and 3DE). The results showed that negative regulation gene deletion of mutants led to metabolic process upregulating expression of protein and improving the productivity of an avermectin B1a. The results showed that the heavy-ion beam irradiation dose that corresponded to optimal production was well over the standard dose, at approximately 80 Gy at 220 AMeV (depending on the strain). This study provides reliable data and a feasible method for increasing AVM productivity in industrial processes.

Ion Beam Irradiation of Metal Films on SiO2

1983 ◽  
Vol 27 ◽  
Author(s):  
G. J. Clark ◽  
J. E. E. Baglin ◽  
F. M. d'Heurle ◽  
C. W. White ◽  
G. Farlow ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Processing ◽  
Metal Film ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Metal Films ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Lateral Transport ◽  
Metal Atoms

ABSTRACTIon beam irradiation of metal film/SiO2 interfaces causes reactions when the metals are those chemically capable of reducing SiO2. These reactions result in the formation of metal rich silicides in the region of the interface and an increase in the adhesion of the film to the substrate. For other nonreactive metals ion irradiation causes lateral transport of metal atoms resulting in the formation of an island structure. The results obtained by ion irradiation are compared with previous studies of high temperature thermal processing of metal films on SiO2.

Comparison of Conductivity Produced in Polymers and Carbon Films by Pyrolysis and High Energy Ion Irradiation

1983 ◽  
Vol 27 ◽  
Author(s):  
T. Venkatesan ◽  
R. C. Dynes ◽  
B. Wilkens ◽  
A. E. White ◽  
J. M. Gibson ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Carbon Film ◽  
Physical Nature ◽  
High Energy ◽  
Carbon Films ◽  
Chemical Degradation ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

ABSTRACTThe electrical properties of pyrolyzed polymers have been studied recently.1,2 It has been shown that organic, polymeric3 and non-polymeric4 films can be made conductive (ρ ~ 10−3Ωcm) by ion beam irradiation. Common to all of the films was the presence of carbon as a constituent element and both pyrolysis and ion beam irradiation3 was shown to increase the relative carbon content of the films. The ion beam irradiated organic films 3,4 exhibited a temperature dependence of their resistivity of the form ρ(T) = ρ∞e−(TЛ)*, where ρ is the ion-induced resistivity, ρ∞ and T0 are constants and T is the temperature. At very high doses of irradiation (1017cm−2Ar+@ 2MeV) the film resistivity was temperature independent. Very similar transport properties were observed in the pyrolyzed polymers1 as well, though the lowest resistivities achieved were higher than the resistivity values observed in the ion irradiated3 polymer films. In both the pyrolysis and ion-irradiation experiments the temperature dependence has been explained by a model due to Sheng and Abeles,5 which involves charge transport by hopping between conducting islands embedded in an insulating matrix. Such striking similarities between two distinctly different modes of energy deposition in the films, prompted us to compare the effects of pyrolysis and ion irradiation in different carbon containing films. We compared both a polymer (HPR-204°) and a film of electron beam evaporated carbon film. While in the former case one would observe chemical degradation as well as structural modification, by studying pure carbon films the physical nature of the processes could be clarified. We report metallic carrier densities in both films and evidence for significant structural rearrangement. We conclude that pyrolysis and ion beam irradiation have similar effects on both polymer and carbon films.

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