Quasi-Freestanding Graphene on SiC(0001)

We report on a comprehensive study of the properties of quasi-freestanding monolayer and bilayer graphene produced by conversion of the (6√3×6√3)R30° reconstruction into graphene via intercalation of hydrogen. The conversion is confirmed by photoelectron spectroscopy and Raman spectroscopy. By using infrared absorption spectroscopy we show that the underlying SiC(0001) surface is terminated by hydrogen in the form of Si-H bonds. Using Hall effect measurements we have determined the carrier concentration and type as well as the mobility which lies well above 1000 cm2/Vs despite a significant amount of short range scatterers detected by Raman spectroscopy.

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Identification of Different Forms of Cocaine and Substances Used in Adulteration Using Near-infrared Raman Spectroscopy and Infrared Absorption Spectroscopy

Journal of Forensic Sciences ◽

10.1111/1556-4029.12666 ◽

2014 ◽

Vol 60 (1) ◽

pp. 171-178 ◽

Cited By ~ 29

Author(s):

Ciro A. F. O. Penido ◽

Marcos Tadeu T. Pacheco ◽

Renato A. Zângaro ◽

Landulfo Silveira

Keyword(s):

Raman Spectroscopy ◽

Absorption Spectroscopy ◽

Infrared Absorption ◽

Near Infrared ◽

Infrared Absorption Spectroscopy

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Potential-Dependent Infrared Absorption Spectroscopy of Adsorbed CO and X-ray Photoelectron Spectroscopy of Arc-Melted Single-Phase Pt, PtRu, PtOs, PtRuOs, and Ru Electrodes

The Journal of Physical Chemistry B ◽

10.1021/jp992943s ◽

2000 ◽

Vol 104 (15) ◽

pp. 3518-3531 ◽

Cited By ~ 134

Author(s):

Renxuan Liu ◽

Hakim Iddir ◽

Qinbai Fan ◽

Gouyan Hou ◽

Aili Bo ◽

...

Keyword(s):

Absorption Spectroscopy ◽

Infrared Absorption ◽

Photoelectron Spectroscopy ◽

Single Phase ◽

Infrared Absorption Spectroscopy ◽

X Ray ◽

Adsorbed Co

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Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

Ibn AL- Haitham Journal For Pure and Applied Science ◽

10.30526/31.3.2023 ◽

2018 ◽

Vol 31 (3) ◽

pp. 20

Author(s):

Sarmad M. M. Ali ◽

Alia A.A. Shehab ◽

Samir A. Maki

Keyword(s):

Activation Energy ◽

Electrical Conductivity ◽

Hall Effect ◽

Carrier Concentration ◽

Hall Mobility ◽

Cu Doping ◽

Before And After ◽

Hall Effect Measurements ◽

Evaporation Technique ◽

P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but decreases by increasing Cu concentration.

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