The Study of Flower-Shaped Structure Dislocation in 4 Inch Germanium Single Crystal

As the key component of single junction GaAs/Ge solar cells and GaAs/Ge solar cells, the quality of germanium single crystal affects the properties of space solar cell directly. The dislocation of germanium single crystals is the main impact factor on solar cells efficiency. Through measuring dislocation densities in the different positions of 4 inch <100> germanium single crystals produced by Czochralski method, we found that flower-shaped structure dislocations pattern was mainly caused by the inclusions. This paper briefly analyzed dislocations produced by inclusions, chemical etching pits method. SEM and EDS measurement methods were also employed to study the flower-shaped structure defects. A germanium single crystal with low dislocation density was obtained and the special defects were almost eliminated. The germanium single crystal with low dislocation density (PV) was obtained, which could meet the requirement of the GaAs/Ge solar cells.

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Low dislocation density Si-doped GaAs single crystal grown by the vapor-pressure-controlled Czochralski method

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00785-3 ◽

1997 ◽

Vol 173 (1-2) ◽

pp. 33-41 ◽

Cited By ~ 16

Author(s):

K. Hashio ◽

S. Sawada ◽

M. Tatsumi ◽

K. Fujita ◽

S. Akai

Keyword(s):

Dislocation Density ◽

Vapor Pressure ◽

Single Crystal ◽

Czochralski Method ◽

Low Dislocation Density ◽

Si Doped ◽

Pressure Controlled

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Growth of Low Dislocation Density GaSb Single Crystals by Czochralski Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.21.956 ◽

1982 ◽

Vol 21 (Part 1, No. 6) ◽

pp. 956-957 ◽

Cited By ~ 8

Author(s):

Iesada Hirai ◽

Takeshi Obokata

Keyword(s):

Dislocation Density ◽

Single Crystals ◽

Czochralski Method ◽

Low Dislocation Density

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Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method

10.1117/12.961978 ◽

1989 ◽

Cited By ~ 13

Author(s):

M. Tatsumi ◽

T. Kawase ◽

T. Araki ◽

N. Yamabayashi ◽

T. Iwasaki ◽

...

Keyword(s):

Dislocation Density ◽

Single Crystals ◽

Low Dislocation Density

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Heteroepitaxy and Characterization of Low-Dislocation-Density GaN on Periodically Grooved Substrates

MRS Proceedings ◽

10.1557/proc-639-g5.7 ◽

2000 ◽

Vol 639 ◽

Cited By ~ 1

Author(s):

T. Detchprohm ◽

M. Yano ◽

R. Nakamura ◽

S. Sano ◽

S. Mochiduki ◽

...

Keyword(s):

Dislocation Density ◽

New Method ◽

Growth Technique ◽

New Approach ◽

Density Area ◽

Low Dislocation Density ◽

Dislocation Densities ◽

Movpe Growth

ABSTRACTWe have developed a new method to prepare low-dislocation-density GaN by using periodically grooved substrates in a conventional MOVPE growth technique. This new approach was demonstrated for GaN grown on periodically grooved α-Al2O3(0001), 6H-SiC(0001)Si and Si(111) substrates. Dislocation densities were 2×107 cm−2 in low-dislocation-density area.

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Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2007.02.002 ◽

2007 ◽

Vol 304 (1) ◽

pp. 57-63 ◽

Cited By ~ 31

Author(s):

Daisuke Nakamura ◽

Satoshi Yamaguchi ◽

Itaru Gunjishima ◽

Yoshiharu Hirose ◽

Tsunenobu Kimoto

Keyword(s):

Dislocation Density ◽

Single Crystals ◽

Dislocation Structure ◽

Low Dislocation Density

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Low temperature direct growth for low dislocation density in III-V on Si towards high-efficiency III-V/Si tandem solar cells

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abde2b ◽

2021 ◽

Author(s):

Masafumi YAMAGUCHI ◽

Yu-Cian Wang ◽

Nobuaki KOJIMA ◽

Akio YAMAMOTO ◽

Yoshio Ohshita

Keyword(s):

Solar Cells ◽

Low Temperature ◽

Dislocation Density ◽

High Efficiency ◽

Tandem Solar Cells ◽

Low Dislocation Density ◽

Direct Growth

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Growth and Characterization of Single Crystal Epitaxial CoGa on MBE Grown III-V Semiconductors

MRS Proceedings ◽

10.1557/proc-144-613 ◽

1988 ◽

Vol 144 ◽

Author(s):

K. C. Garrison ◽

C. J. Palmstrøm ◽

R. A. Bartynski

Keyword(s):

Substrate Temperature ◽

Single Crystal ◽

Single Crystals ◽

Structural Quality ◽

High Quality ◽

Auger Analysis ◽

Post Deposition

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.

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