Diamond Vertical Schottky Barrier Diode with Al2O3 Field Plate

2012 ◽  
Vol 717-720 ◽  
pp. 1319-1321 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Masanori Nagase ◽  
Yukako Kato ◽  
Shinichi Shikata
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diode ◽  
Plate Structure ◽  
Field Plate ◽  
Low Leakage ◽  
Leakage Characteristics

A field-plate structure is applied to vertical diamond Schottky barrier diode. A sputtered Al2O3 with 0.2 µm thickness is utilized for field-plate insulator. Fabricated diamond VSBD shows low leakage characteristics. Accordingly, the breakdown voltage is improved from 900V to 1,800V.

High Power AlGaN/GaN Schottky Barrier Diode with 1000 V Operation

2005 ◽  
Vol 892 ◽  
Author(s):  
Seikoh Yoshida ◽  
Nariaki Ikeda ◽  
Jiang Li ◽  
Takahiro Wada ◽  
Hiroshi Kambayashi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Plasma Chemical Vapor Deposition ◽  
Plate Structure ◽  
Field Plate ◽  
High Breakdown Voltage ◽  
Current Voltage ◽  
Gan Heterostructure

AbstractWe investigated an AlGaN/GaN Schottky barrier diode (SBD) with a field plate structure for a high breakdown voltage. The AlGaN/GaN heterostructure was grown by MOCVD. The AlGaN buffer was grown on the Si (111) substrate and Al0.25Ga0.75N (25 nm)/ GaN (1000 nm) was grown on the buffer layer. The AlGaN/GaN heterostructure without any crack was obtained. After that, a Schottky barrier diode was fabricated using an AlGaN/GaN heterostructure. In order to obtain a high breakdown voltage, a gate field plate structure was used. SiO2 was formed on the AlGaN layer using a plasma chemical vapor deposition. The Schottky electrode of Ni/Au was partially deposited on the SiO2 film towards the ohmic region. The length of field plate structure was also changed to investigate the effect. Ti/Al-silicide was used for an ohmic electrode of SBD. The contact resistance of ohmic electrodes was 8E-6 ohmcm2.The current-voltage characteristics of an AlGaN/GaN SBD were measured. The reverse breakdown voltage of the diode was also over 1000 V and the reverse leakage current was below 1.5E-6 A/mm.

Evaluation by Simulation of AlGaN/GaN Schottky Barrier Diode (SBD) With Anode-Via Vertical Field Plate Structure

2018 ◽  
Vol 65 (6) ◽  
pp. 2552-2557 ◽  
Author(s):  
Ying Wang ◽  
Zhi-Yuan Li ◽  
Yue Hao ◽  
Xin Luo ◽  
Jun-Peng Fang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Plate Structure ◽  
Field Plate ◽  
Vertical Field

scholarly journals Reduction in reverse leakage current of diamond vertical Schottky barrier diode using SiNX field plate structure

2019 ◽  
Vol 13 ◽  
pp. 102250 ◽  
Author(s):  
Dan Zhao ◽  
Zhangcheng Liu ◽  
Juan Wang ◽  
Wenyang Yi ◽  
Ruozheng Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode ◽  
Plate Structure ◽  
Field Plate ◽  
Reverse Leakage Current

A Study of Edge Termination Field Plate Oxide Etch Angle for Optimize SiC Schottky Barrier Diode Breakdown Voltage Characteristics

2016 ◽  
Vol 16 (12) ◽  
pp. 12936-12938
Author(s):  
Young Sung Hong ◽  
Tae Jin Nam ◽  
Myong Hwan Lee ◽  
Sin Su Kyoung ◽  
Tai Young Kang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diode ◽  
Field Plate ◽  
Edge Termination

Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Organic Chemical ◽  
Field Plate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

2021 ◽  
Vol 68 (3) ◽  
pp. 1369-1373
Author(s):  
Xuanwu Kang ◽  
Yue Sun ◽  
Yingkui Zheng ◽  
Ke Wei ◽  
Hao Wu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Current Density ◽  
Schottky Barrier Diode ◽  
Low Leakage ◽  
Forward Current

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage

2014 ◽  
Vol 64 ◽  
pp. 152-157 ◽  
Author(s):  
Sarosij Adak ◽  
Sanjit Kumar Swain ◽  
Avtar Singh ◽  
Hemant Pardeshi ◽  
Sudhansu Kumar Pati ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Plate Structure ◽  
Field Plate ◽  
Source Field
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