Reduction in reverse leakage current of diamond vertical Schottky barrier diode using SiNX field plate structure

AbstractWe investigated an AlGaN/GaN Schottky barrier diode (SBD) with a field plate structure for a high breakdown voltage. The AlGaN/GaN heterostructure was grown by MOCVD. The AlGaN buffer was grown on the Si (111) substrate and Al0.25Ga0.75N (25 nm)/ GaN (1000 nm) was grown on the buffer layer. The AlGaN/GaN heterostructure without any crack was obtained. After that, a Schottky barrier diode was fabricated using an AlGaN/GaN heterostructure. In order to obtain a high breakdown voltage, a gate field plate structure was used. SiO2 was formed on the AlGaN layer using a plasma chemical vapor deposition. The Schottky electrode of Ni/Au was partially deposited on the SiO2 film towards the ohmic region. The length of field plate structure was also changed to investigate the effect. Ti/Al-silicide was used for an ohmic electrode of SBD. The contact resistance of ohmic electrodes was 8E-6 ohmcm2.The current-voltage characteristics of an AlGaN/GaN SBD were measured. The reverse breakdown voltage of the diode was also over 1000 V and the reverse leakage current was below 1.5E-6 A/mm.

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Diamond Vertical Schottky Barrier Diode with Al2O3 Field Plate

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.1319 ◽

2012 ◽

Vol 717-720 ◽

pp. 1319-1321 ◽

Cited By ~ 5

Author(s):

Hitoshi Umezawa ◽

Masanori Nagase ◽

Yukako Kato ◽

Shinichi Shikata

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Schottky Barrier Diode ◽

Plate Structure ◽

Field Plate ◽

Low Leakage ◽

Leakage Characteristics

A field-plate structure is applied to vertical diamond Schottky barrier diode. A sputtered Al2O3 with 0.2 µm thickness is utilized for field-plate insulator. Fabricated diamond VSBD shows low leakage characteristics. Accordingly, the breakdown voltage is improved from 900V to 1,800V.

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Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/5.0047821 ◽

2021 ◽

Vol 118 (16) ◽

pp. 162109

Author(s):

Esmat Farzana ◽

Fikadu Alema ◽

Wan Ying Ho ◽

Akhil Mauze ◽

Takeki Itoh ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Schottky Barrier ◽

Vapor Deposition ◽

Chemical Vapor ◽

Schottky Barrier Diode ◽

Organic Chemical ◽

Field Plate ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

Applied Physics Express ◽

10.35848/1882-0786/ac4080 ◽

2021 ◽

Vol 15 (1) ◽

pp. 016501

Author(s):

Fumio Otsuka ◽

Hironobu Miyamoto ◽

Akio Takatsuka ◽

Shinji Kunori ◽

Kohei Sasaki ◽

...

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Schottky Barrier Diodes ◽

Wafer Level ◽

Current Ratio ◽

Field Plate ◽

Low Leakage ◽

Large Size ◽

Forward Current ◽

Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

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Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes

Semiconductor Science and Technology ◽

10.1088/1361-6641/aaf8cb ◽

2019 ◽

Vol 34 (2) ◽

pp. 025016 ◽

Cited By ~ 3

Author(s):

A Latreche

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Schottky Barrier Diodes ◽

Reverse Leakage Current ◽

Conduction Mechanisms

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Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.881 ◽

2013 ◽

Vol 740-742 ◽

pp. 881-886 ◽

Cited By ~ 8

Author(s):

Hiroyuki Okino ◽

Norifumi Kameshiro ◽

Kumiko Konishi ◽

Naomi Inada ◽

Kazuhiro Mochizuki ◽

...

Keyword(s):

Electric Field ◽

Schottky Barrier ◽

Leakage Current ◽

Reverse Current ◽

Tunneling Current ◽

Leakage Currents ◽

Reverse Leakage Current ◽

Low Leakage ◽

Chip Size ◽

Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

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