Laplace Transform Deep Level Transient Spectroscopy Study of the EH6/7 Center

2013 ◽  
Vol 740-742 ◽  
pp. 645-648 ◽  
Author(s):  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
Laplace Transform ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dose Dependence ◽  
Conduction Band Edge ◽  
Emission Rates ◽  
Energy Position ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
Electric Filed

We employed Laplace transform deep level transient spectroscopy (LDLTS) for the resolution of the EH6/7 center in n-type 4H-SiC epilayers. Our results suggest that this technique is effective in separating the emission rates of the EH6 and EH7 levels. From the Arrhenius dependence of the emission rates we could estimate the energy position of EH6 and EH7 as 1.39 and 1.49 eV below the minimum of the conduction band edge, respectively. Generation of of EH6 and EH7 centers by low-energy electron irradiation (dose dependence) was also investigated. At last, a double pulse Laplace DLTS is performed in order to show the electric filed dependence of the emission rates of EH6 and EH7.

Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes

2009 ◽  
Vol 615-617 ◽  
pp. 389-392 ◽  
Author(s):  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
Fourier Transform ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Dose Dependence ◽  
Spectroscopy Study ◽  
Energy Position ◽  
Electron Dose ◽  
Similar Dose ◽  
Capacitance Spectroscopy ◽  
Transient Spectroscopy

As-grown and 116 keV electron-irradiated n-type 3C and 4H-SiC epilayers were electrically characterized by means of Fourier-transform deep level transient spectroscopy (FT-DLTS). A total of four deep levels, in the 0.20-0.73 eV range, below the conduction band, have been detected. By considering the band gap offset between 4H and 3C polytypes, we found that the deepest level in 3C-SiC labeled K3 (Ec-0.73 eV) has an energy position close to the EH6/7 level in 4H-SiC. An electron-dose dependence study of K3 and EH6/7, reveals that these two centers display a similar dose dependence behavior, suggesting that they may be related to the same defect.

Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 331-336
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Andrei Mihaila
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Scientific Community ◽  
Minority Carrier ◽  
Deep Level ◽  
Current Mode ◽  
Low Energy ◽  
The Other ◽  
Carrier Trap ◽  
Low Energy Electron ◽  
Transient Spectroscopy

SiC has currently attracted the interest of the scientific community for qubit applications. Despite the importance given to the properties of color centers in high-purity semi-insulating SiC, little is known on the electronic properties of defects in this material. In our study, we investigated the presence of electrically active levels in vanadium-doped substrates. Current mode deep level transient spectroscopy, carried out in the dark and under illumination, together with 1-D simulations showed the presence of two electrically active levels, one associated to a majority carrier trap and the other one to a minority carrier trap. The nature of the detected defects has been discussed in the light of the characterization performed on low-energy electron irradiated substrates and previous results found in the literature.

Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.

2011 ◽  
Vol 178-179 ◽  
pp. 130-135 ◽  
Author(s):  
Vincent Quemener ◽  
Mari Alnes ◽  
Lasse Vines ◽  
Ola Nilsen ◽  
Helmer Fjellvåg ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Deep Level ◽  
Atomic Layer ◽  
Substantial Improvement ◽  
Conduction Band Edge ◽  
Energy Position ◽  
Layer Deposition ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

ZnO/n-Si and ZnO/p-Si heterostructures were prepared by Atomic layer deposition (ALD) and the electronic properties have been investigated by Current-Voltage (I-V), Capacitance-Voltage (C-V) and Deep level transient spectroscopy (DLTS) measurements. DLTS measurements show two dominants electron traps at the interface of the ZnO/n-Si junction with energy position at 0.07 eV and 0.15 eV below the conduction band edge, labelled E(0.07) and E(0.15), respectively, and no electrically active defects at the interface of the ZnO/p-Si junction. E(0.07) is reduced by annealing up to 400°C while E(0.15) is created at 500°C. The best heterostructure is found after heat treatment at 400°C with a substantial improvement of the current rectification for ZnO/n-Si and the formation of Ohmic contact on ZnO/p-Si. A reduction of the interface defects correlates with an improvement of the crystal structure of the ZnO film with a preferred orientation along the c-axis.

Laplace-transform deep-level transient spectroscopy studies of the G4 gold–hydrogen complex in silicon

1998 ◽  
Vol 73 (21) ◽  
pp. 3126-3128 ◽  
Author(s):  
P. Deixler ◽  
J. Terry ◽  
I. D. Hawkins ◽  
J. H. Evans-Freeman ◽  
A. R. Peaker ◽  
...  
Keyword(s):  
Laplace Transform ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 373-376 ◽  
Author(s):  
Kazuki Yoshihara ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Low Energy ◽  
Epitaxial Layers ◽  
Before And After ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
P Type

We have characterized deep levels in as-grown and electron irradiated p-type 4H-SiC epitaxial layers by the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated with electrons in order to introduce defects. As a result, we found that electron irradiation to p-type 4H-SiC created complex defects including carbon vacancy or interstitial. Moreover, we found that observed deep levels are different between before and after annealing, and thus annealing may change structures of defects.

Near-interface Traps in n-type SiO2/SiC MOS Capacitors from Energy-resolved CCDLTS

2010 ◽  
Vol 1246 ◽  
Author(s):  
Alberto F Basile ◽  
Sarit Dhar ◽  
John Rozen ◽  
Xudong Chen ◽  
John Williams ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Electron Emission ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Emission Rates ◽  
Mos Capacitors ◽  
Transient Spectroscopy

AbstractSilicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy

2013 ◽  
Vol 31 (4) ◽  
pp. 572-576 ◽  
Author(s):  
Paulina Kamyczek ◽  
Ewa Placzek-Popko ◽  
Eunika Zielony ◽  
Zbigniew Zytkiewicz
Keyword(s):  
Laplace Transform ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy
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