Defect Stability and Electronic Configuration of Off-Stoichiometric Ni-X-In (X = Mn, Fe and Co) Alloys: A First-Principles Study

2016 ◽  
Vol 873 ◽  
pp. 8-12
Author(s):  
Qi Rui Zu ◽  
Jing Bai ◽  
Xiao Shu Wang ◽  
Kai Hong Wu ◽  
Shuai Wang ◽  
...  

Ni-Mn-In is a novel type of magnetic shape memory alloy, its shape memory effect has been realized through magnetic field induced reverse martensitic transformation. A variety of point defects would be generated during composition adjustment process, such as antisite defect, vacancy and exchange. The first–principles calculations within the framework of the density functional theory using the Vienna ab initio software package (VASP) have been used in this paper to investigate the defect formation energy and electronic configuration of the off-stoichiometric Ni-X-In (X= Mn, Fe and Co) alloys. The In antisite on the X sublattice (InX) and the Ni antisite on the X sublattice (NiX) have the lowest formation energies in the investigated series. The formation energy of the Ni vacancy is the lowest, while that of the in vacancy is the highest. It is confirmed that the in constituent plays a dominant role for stabilizing the austenitic phase.

2011 ◽  
Vol 684 ◽  
pp. 1-29 ◽  
Author(s):  
Peter Entel ◽  
Antje Dannenberg ◽  
Mario Siewert ◽  
Heike C. Herper ◽  
Markus E. Gruner ◽  
...  

The structural and magnetic order are the decisive elements which vastly determine the properties of smart ternary intermetallics such as X2YZ Heusler alloys. Here, X and Y are transition metal elements and Z is an element from the III-V group. In order to give a precise prescription of the possibilities to optimize the magnetic shape memory and magnetocaloric effects of these alloys, we use density functional theory calculations. In particular, we outline how one may find new intermetallics which show higher Curie and martensite transformation temperatures when compared with the prototypical magnetic shape-memory alloy Ni2MnGa. Higher operation temperatures are needed for technological applications at elevated temperatures.


2017 ◽  
Vol 373 ◽  
pp. 41-45 ◽  
Author(s):  
Bin Zhao ◽  
Bo Zhou ◽  
Chong Yang Li ◽  
Ning Qi ◽  
Zhi Quan Chen

Defect formation energy in Bi2Te3 thermoelectric material was calculated using a first principles approach based on the Density Functional Theory (DFT). For vacancy-type defect, the Te1 vacancy (VTe1) is the most stable defect with low formation energy in both Bi-rich and Te-rich conditions, which indicates that the Te1 vacancies have higher probability to be formed. For antisite defects, the formation energy of BiTe1 is much lower than that of BiTe2 in Bi-rich condition, while in Te-rich condition it is beneficial for TeBi with lower formation energy. Positron wave function distribution and positron lifetimes of different annihilation states in Bi2Te3 were also calculated using the atomic superposition (ATSUP) method. The positron bulk lifetime in Bi2Te3 is about 231 ps, and for the neutral vacancy-type defects without relaxation, the positron lifetimes of VBi, VTe1 and VTe2 are 275 ps, 295 ps and 269 ps, respectively.


2013 ◽  
Vol 307 ◽  
pp. 387-390
Author(s):  
Jian Xin Zhu ◽  
Da Wei Jin ◽  
Jian Zhang ◽  
Hong Liang Zhao

NiTi shape memory alloy is considered to be the most important shape memory alloys for its salient superelasticity and shape memory effect,which are displayed in martensitic transformations.In this paper, first-principles plane-wave method is utilized to systemically investigate the geometrical and electronic structures of NiTi (100) surface.Calculated the adsorption of oxygen atoms on the Ti/ NITI different location .The formation energy, Millikan population analysis results show that the Oxygen atoms easy to be adsorbed on the surface of Ti end surface,formation of TiO2.


2009 ◽  
Vol 1200 ◽  
Author(s):  
Markus E. Gruner

AbstractThis contribution reports static ionic displacements in ferromagnetic disordered Fe70Pd30 alloys obtained by relaxation of the ionic positions of a 108-atom supercell within the framework of density functional theory. Comparison with a simple statistical model based on Lennard-Jones pair interactions reveals that these displacements are significantly larger than can be explained by the different sizes of the elemental constituents. The discrepancies are presumably related to collective displacements of the Fe atoms. Corresponding distortions are experimentally observed for ordered Fe3Pt and predicted by first-principles calculations for all ordered Fe-rich L12 alloys with Ni group elements and originate from details of the electronic structure at the Fermi level.


2018 ◽  
Vol 32 (14) ◽  
pp. 1850178 ◽  
Author(s):  
Xuefeng Lu ◽  
Xu Gao ◽  
Junqiang Ren ◽  
Cuixia Li ◽  
Xin Guo ◽  
...  

Bandgap tailoring of [Formula: see text]-Si3N4 is performed by single and co-doping by using density functional theory (DFT) of PBE functional and plane-wave pseudopotential method. The results reveal that a direct bandgap transfers into an indirect one when single-doped with As element. Also, a considerate decrease of bandgap to 0.221 eV and 0.315 eV is present for Al–P and As–P co-doped systems, respectively, exhibiting a representative semiconductor property that is characteristic for a narrower bandgap. Compared with other doped systems, Al-doped system with formation energy of 2.67 eV is present for a more stable structure. From charge density difference (CDD) maps, it is found that the blue area between co-doped atoms increases, illustrating an enhancement of covalent property for Al–P and Al–As bonds. Moreover, a slightly obvious “Blue shift” phenomenon can be obtained in Al, Al–P and Al–As doped systems, indicating an enhanced capacity of responses to light, which contributes to the insight for broader applications with regard to photoelectric devices.


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