A Possible Mechanism of Formation of Radiation Defects in Amorphous Metals Bombarded with High-Energy Heavy Ions

1992 ◽  
Vol 97-99 ◽  
pp. 647-652 ◽  
Author(s):  
G. Szenes
Keyword(s):  
Heavy Ions ◽  
High Energy ◽  
Amorphous Metals ◽  
Radiation Defects ◽  
Mechanism Of Formation

Effect of irradiation with high-energy protons and ions on the structure and properties of composite HTSC-2 tapes

2021 ◽  
Vol 3 ◽  
pp. 5-20
Author(s):  
A. V. Troitskii ◽  
◽  
L. Kh. Antonova ◽  
E. I. Demikhov ◽  
T. E. Demikhov ◽  
...  
Keyword(s):  
Critical Current ◽  
Heavy Ions ◽  
High Energy ◽  
Critical Parameters ◽  
Internal Stresses ◽  
Radiation Defects ◽  
Proton Radiation ◽  
Structure And Properties ◽  
Superconducting Layer ◽  
Thermal Peak

The paper considers the effect of radiation defects caused by irradiation with protons (2.5 MeV), heavy ions 132Xe27+ (167, 80, 40  MeV), 86Kr17+(107 MeV), 40Ar8+(48 MeV), on the critical parameters of HTSC-2 tapes based on compounds YBa2Cu3O7 – x and GdBa2Cu3O7 – x. The results of calculations based on the model of the thermal peak of the ion track sizes are presented. The projective ranges of ions and protons in these samples are calculated. The radiation resistance of the studied samples to ion and proton radiation of the indicated energies is determined. The performed studies made it possible to detect, at low fluences of irradiation with heavy ions, an increase in the critical current (Ic), an improvement in the adhesion between the superconducting layer and the substrate, and a decrease in internal stresses in the HTSC layer. At higher values of fluences, the critical current and critical temperature decrease. It is important that the decrease in Ic begins at lower fluences than Tc.

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

scholarly journals High-energy heavy-ions physics: from RHIC to LHC

2007 ◽  
Vol 782 (1-4) ◽  
pp. 215-223 ◽  
Author(s):  
David d'Enterria
Keyword(s):  
Heavy Ions ◽  
High Energy

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 421-426
Author(s):  
Jan Vobecký ◽  
Volodymyr Komarnitskyy ◽  
Vít Záhlava ◽  
Pavel Hazdra
Keyword(s):  
Low Temperature ◽  
Active Sites ◽  
Carrier Lifetime ◽  
High Energy ◽  
Deep Levels ◽  
Radiation Defects ◽  
Metal Atoms ◽  
Temperature Diffusion ◽  
Concentration Enhancement ◽  
Application Potential

Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 oC. Before the diffusion, the diodes were implanted with high-energy He2+ to assess, if the radiation defects enhance the concentration of metal atoms at electrically active sites and what is the application potential for carrier lifetime control. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt, Pd and V form deep levels in increased extent at the presence of radiation defects above 600 oC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC 0.203 eV) and donor level V0/+ (EC 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 oC.

ESR Studies of Paramagnetic Defects formed in Amorphous SiO2 by High Energy Heavy Ions

1988 ◽  
pp. 205-210
Author(s):  
E. Dooryhee ◽  
Y. Langevin ◽  
J. Borg ◽  
J. P. Duraud ◽  
E. Balanzat
Keyword(s):  
Heavy Ions ◽  
High Energy ◽  
Amorphous Sio2
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