Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions

Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 oC. Before the diffusion, the diodes were implanted with high-energy He2+ to assess, if the radiation defects enhance the concentration of metal atoms at electrically active sites and what is the application potential for carrier lifetime control. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt, Pd and V form deep levels in increased extent at the presence of radiation defects above 600 oC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC 0.203 eV) and donor level V0/+ (EC 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 oC.

Download Full-text

Spatial distribution of high energy cosmic ray electrons perpendicular to the galactic plane

Astrophysics and Space Science ◽

10.1007/bf00642849 ◽

1977 ◽

Vol 47 (2) ◽

pp. 415-421 ◽

Cited By ~ 5

Author(s):

R. Schlickeiser ◽

K. O. Thielheim

Keyword(s):

Spatial Distribution ◽

Galactic Plane ◽

Cosmic Ray ◽

High Energy

Download Full-text

Spatial Distribution Measurement of High Energy Particle using Time-Of-Flight Neutral Particle Energy Analyzer in Large Helical Device

Advanced Diagnostics for Magnetic and Inertial Fusion ◽

10.1007/978-1-4419-8696-2_24 ◽

2002 ◽

pp. 145-148

Author(s):

T. Ozaki ◽

◽

P. Goncharov ◽

S. Murakami ◽

S. Sudo ◽

...

Keyword(s):

Spatial Distribution ◽

Neutral Particle ◽

Time Of Flight ◽

High Energy ◽

Particle Energy ◽

High Energy Particle ◽

Energy Analyzer ◽

Energy Particle ◽

Distribution Measurement

Download Full-text

A Possible Mechanism of Formation of Radiation Defects in Amorphous Metals Bombarded with High-Energy Heavy Ions

Materials Science Forum ◽

10.4028/www.scientific.net/msf.97-99.647 ◽

1992 ◽

Vol 97-99 ◽

pp. 647-652 ◽

Cited By ~ 28

Author(s):

G. Szenes

Keyword(s):

Heavy Ions ◽

High Energy ◽

Amorphous Metals ◽

Radiation Defects ◽

Mechanism Of Formation

Download Full-text

The Creation and Annealing of Heavy Ion Damage in Silicon

MRS Proceedings ◽

10.1557/proc-93-79 ◽

1987 ◽

Vol 93 ◽

Cited By ~ 6

Author(s):

L. M. Howe ◽

M. H. Rainville

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Spatial Distribution ◽

High Resolution ◽

Heavy Ion ◽

High Energy ◽

Transmission Electron ◽

Ion Damage ◽

Deposited Energy ◽

Microscopy Techniques

ABSTRACTHigh resolution transmission electron microscopy techniques have been used to obtain information on the contrast, spatial distribution, size and annealing behaviour of the damaged regions produced within individual collision cascades by heavy ion (As, Sb and Bi) bombardment (10–120 KeV) of silicon with 1.0 × 1011 – 6.0 × 1011 ions cm−2. The fraction of the theoretical cascade volume occupied by a heavily damaged region steadily increased as the average deposited energy density within the cascade increased. At high energy densities, the visible damage produced in the main cascade consisted of a single, isolated damaged region. With decreasing values of (i.e. increasing ion implant energies), there was an increasing tendency for multiple damaged regions to be produced within the main cascade.

Download Full-text