scholarly journals Investigation of Germanium Implanted with Hydrogen for Layer Transfer Applications

2011 ◽  
Vol 178-179 ◽  
pp. 295-300 ◽  
Author(s):  
Tatiana S. Perova ◽  
B.M. Armstrong ◽  
Joanna Wasyluk ◽  
P. Baine ◽  
Paul Rainey ◽  
...  
Keyword(s):  
Hydrogen Ion ◽  
Projection Area ◽  
Raman Mapping ◽  
Layer Transfer ◽  
Hydrogen Acceptor ◽  
Defect Clusters ◽  
Related Point ◽  
Crystal Damage ◽  
Point Defect Clusters ◽  
Hydrogen Ion Implantation

The technology for thin Ge layer transfer by hydrogen ion-cut process is characterised in this work. Experiments were carried out to determine suitable hydrogen ion implantation doses in germanium for the low temperature ion cut process by examining the formation of blisters on implanted samples. Raman and Spreading Resistance Profiling (SRP) have been used to analyse defects in germanium caused by hydrogen implants. Bevelling has been used to facilitate probing beyond the laser penetration depth. Results of Raman mapping along the projection area reveal that after post implant annealing at 400 °C, some crystal damage remains, while at 600 °C, the crystal damage has been repaired. SRP shows that some amount of hydrogen acceptor states (~1Î1016 acceptors/cm2) remain after 600 °C. These are thought to be vacancy-related point defect clusters.

Effect of displacement cascade structure and defect mobility on the growth of point defect clusters under irradiation

2006 ◽  
Vol 351 (1-3) ◽  
pp. 39-46 ◽  
Author(s):  
C.S. Becquart ◽  
A. Souidi ◽  
C. Domain ◽  
M. Hou ◽  
L. Malerba ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Clusters ◽  
Displacement Cascade ◽  
Cascade Structure ◽  
Defect Mobility ◽  
Point Defect Clusters

Point Defect Clusters and Dislocations in FIB Irradiated Nanocrystalline Aluminum Films: An Electron Tomography and Aberration-Corrected High-Resolution ADF-STEM Study

2011 ◽  
Vol 17 (6) ◽  
pp. 983-990 ◽  
Author(s):  
Hosni Idrissi ◽  
Stuart Turner ◽  
Masatoshi Mitsuhara ◽  
Binjie Wang ◽  
Satoshi Hata ◽  
...  
Keyword(s):  
High Resolution ◽  
Point Defect ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
Dark Field ◽  
Internal Stresses ◽  
Defect Clusters ◽  
Point Defect Clusters ◽  
Aberration Corrected

AbstractFocused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.

Al+and N+implantation in silicon carbide: a role of point defect clusters in defect evolution

2001 ◽  
Author(s):  
Peter V. Rybin ◽  
Dmitri V. Kulikov ◽  
Yuri V. Trushin ◽  
J. Petzoldt
Keyword(s):  
Silicon Carbide ◽  
Point Defect ◽  
Defect Clusters ◽  
Defect Evolution ◽  
Point Defect Clusters

X-Ray Diffuse Scattering Investigation of Defects in Ion Implanted and Annealed Silicon

1998 ◽  
Vol 524 ◽  
Author(s):  
C. H. Chang ◽  
U. Beck ◽  
T. H. Metzger ◽  
J. R. Patel
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Point Defects ◽  
Diffuse Scattering ◽  
Grazing Incidence ◽  
X Rays ◽  
Scattered Intensity ◽  
X Ray ◽  
Defect Clusters ◽  
Point Defect Clusters

ABSTRACTTo characterize the point defects and point defect clusters introduced by ion implantation and annealing, we have used grazing incidence x-rays to measure the diffuse scattering in the tails of Bragg peaks (Huang Scattering). An analysis of the diffuse scattered intensity will allow us to characterize the nature of point defects or defect clusters introduced by ion implantation. We have also observed unexpected satellite peaks in the diffuse scattered tails. Possible causes for the occurrence of the peaks will be discussed.

The Influence Of Silicon Orientation On Surface Blistering Behaviors for Molecular Hydrogen Ion Implantation

2019 ◽  
Vol 34 (1) ◽  
pp. 1159-1164
Author(s):  
Yu Cheng Hsiao ◽  
Jenq-Horng Liang ◽  
Chih-Ming Lin
Keyword(s):  
Ion Implantation ◽  
Molecular Hydrogen ◽  
Hydrogen Ion ◽  
Hydrogen Ion Implantation
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