Coil-Less Fluxgate Effect in Amorphous Co71Fe1Mo1Mn4Si14B9 Ribbon

2012 ◽  
Vol 190 ◽  
pp. 167-170
Author(s):  
A. Fidan ◽  
S. Atalay ◽  
N. Bayri ◽  
F.E. Atalay ◽  
V. Yagmur

In this study, the coil-less fluxgate effect in Co71Fe1Mo1Mn4Si14B9 amorphous ribbon was investigated. The coil-less fluxgate is a new type of fluxgate sensor without a coil. It is based on helical anisotropy and deep circumferential magnetic saturation in the ferromagnetic fluxgate core. Coil-less fluxgate measurements were performed in as-cast and annealed ribbons at 480 mA current with 3, 12.5 and 25 rad/m torsion. The second harmonic of the output voltage detected from the ends of the wire show a linear variation in the low magnetic field region. The sensitivity of the current annealed ribbons in the presence of 25 rad/m torsion is about 570 V/T, which is comparable with previously reported fluxgate sensitivity values. The presented sensor has no coil so it is much easier to reduce the size of the sensor and easy to fabricate it.

2004 ◽  
Vol 124 (6) ◽  
pp. 477-482 ◽  
Author(s):  
Hoshiyuki Yamazaki ◽  
Osamu Watanabe ◽  
Yuichiro Yamashita ◽  
Makoto Iwai ◽  
Yoshitaka Suzuki ◽  
...  

1990 ◽  
Vol 59 (9) ◽  
pp. 3077-3080 ◽  
Author(s):  
Susamu Taketomi ◽  
Nobuyuki Inaba ◽  
Hiromasa Takahashi ◽  
Hideki Miyajima

2005 ◽  
Vol 906 ◽  
Author(s):  
Duhyun Lee ◽  
G.H. Jeong ◽  
J.H. Kim ◽  
Y.S. Kim ◽  
S.J. Suh

AbstractAs an alternative to the magnetoimpedance (MI) devices made from amorphous ribbon or wire, this study proposed a thin film type MI device composed with Ag conductive core and soft ferromagnetic NiFeMo sandwich layers. Obtained optimum sandwich structure was Ta 5 nm/ NiFeMo 300 nm/ Ta 5 nm/ Ag 900 nm/ Ta 5 nm/ NiFeMo 300 nm/ Ta 5 nm, and the width of Ag as 20 µm and the width of NiFeMo as 100 µm. It was patterned by using photolithography and lift-off process. The sandwich structure showed the maximum MI ratio about 40% at the 15 MHz. The impedance change was linear and nearly reversible at the external magnetic field region below the anisotropy field.


2011 ◽  
Vol 483 ◽  
pp. 164-168
Author(s):  
Wei Ping Chen ◽  
Chang Chun Dong ◽  
Xiao Wei Liu ◽  
Zhi Ping Zhou

In this paper, the writers reported on a fluxgate sensor and a CMOS-ASIC for sensor supply. The design method and principle of the interface circuit of the fluxgate sensor was also presented, which was based on second-harmonic detection of the output voltage. This circuit has been simulated and realized through 0.5μm DPDM P-sub CMOS Process. The size of this circuit is 2mm×2mm. The circuit exhibited a sensitivity of 16.5mV/μT and a linear range of ±90μT. With 5V of voltage supply, the total power consumption of the circuit was as low as 35 mW.


2020 ◽  
Vol 117 (23) ◽  
pp. 232403
Author(s):  
M. Ohkuma ◽  
M. Mito ◽  
Y. Kousaka ◽  
T. Tajiri ◽  
J. Akimitsu ◽  
...  

2010 ◽  
Vol 37-38 ◽  
pp. 444-447 ◽  
Author(s):  
Wei Qiang Ye ◽  
Yi Min Deng ◽  
Wei Wang

As a new type of smart materials, magnetorheological elastomer (MRE) has become a hot current research focus. However, the piezoresistivity and magnetoresistivity of MRE have not been well studied. In this paper, this was done by using a test rig developed by the authors. The experimental results showed that the conductivity of the MRE responded sensitively to the applied pressure, and a linear relationship between the resistivity of the MRE and the applied pressure can be observed within a certain range. Besides, the sensitivity of piezoresistivity is different among different ratios of metal content, and it becomes more obvious when using the nickel content. And, the magnetoresistivity of MRE is not obvious in a range of low magnetic field intensity, and there is also no hysteresis phenomenon about magnetoresistivity.


2007 ◽  
Vol 101 (9) ◽  
pp. 093907 ◽  
Author(s):  
D. Seddaoui ◽  
D. Ménard ◽  
P. Ciureanu ◽  
A. Yelon

1974 ◽  
Vol 79 (25) ◽  
pp. 3522-3544 ◽  
Author(s):  
J. A. Simpson ◽  
D. C. Hamilton ◽  
R. B. McKibben ◽  
A. Mogro-Campero ◽  
K. R. Pyle ◽  
...  

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