Wetting Challenges in Cleaning of High Aspect Ratio Nano-Structures

2012 ◽  
Vol 195 ◽  
pp. 235-238 ◽  
Author(s):  
Xiu Mei Xu ◽  
Guy Vereecke ◽  
Erik van den Hoogen ◽  
Jens Smeers ◽  
Silvia Armini ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
New Technology ◽  
Critical Issue ◽  
Silicon Substrates ◽  
Wetting Properties ◽  
Nano Structures ◽  
Wet Processing ◽  
Semiconductor Fabrication ◽  
Technology Nodes

In semiconductor fabrication, pattern collapse of high aspect ratio structures after wet processing has been a critical issue and attracted a lot of interest. On the other hand, very little attention is spent on the potential wetting issues as feature dimensions are continuously scaled down and novel materials with different wetting properties are used in new technology nodes. In this work we investigate the wettability of nanopatterned silicon substrates with different surface modifications.

Fabrication of ultra-high-aspect-ratio nano-walls and nano-structures on silicon substrates

2020 ◽  
Vol 30 (12) ◽  
pp. 125008
Author(s):  
Mahsa Pournia ◽  
Seyed Ahmadreza Firoozabadi ◽  
Morteza Fathipour ◽  
Mohammadreza Kolahdouz
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon Substrates ◽  
Nano Structures

Some Critical Issues in Pattern Collapse Prevention and Repair

2016 ◽  
Vol 255 ◽  
pp. 147-151 ◽  
Author(s):  
Xiu Mei Xu ◽  
Nandi Vrancken ◽  
Guy Vereecke ◽  
Samuel Suhard ◽  
Geoffrey Pourtois ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Production Yield ◽  
Collapse Prevention ◽  
Characterization Techniques ◽  
Critical Issues ◽  
Wet Processing ◽  
Recent Developments ◽  
Semiconductor Fabrication

In semiconductor fabrication, pattern collapse of high aspect ratio structures after wet processing is a major problem that could reduce production yield. In this work, several critical issues which limit our understanding of pattern collapse phenomenon are discussed together with some recent results of experiment and modeling. Special efforts have been put to update some of the most recent developments in characterization techniques.

Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study

2016 ◽  
Vol 255 ◽  
pp. 136-140 ◽  
Author(s):  
Nandi Vrancken ◽  
Guy Vereecke ◽  
Stef Bal ◽  
Stefanie Sergeant ◽  
Geert Doumen ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon Nanostructures ◽  
Complete Structure ◽  
Chemically Modified ◽  
Chemically Modified Surfaces ◽  
Modified Surfaces ◽  
Wet Processing ◽  
Modification Of The Surface

This work focuses on capillary-induced collapse of high-aspect-ratio silicon nanopillars. Modification of the surface chemistry is demonstrated to be an efficient approach for reducing capillary forces and consequently reduce pattern collapse. Special effort is spent on determination of the wetting state of chemically modified surfaces as complete structure wetting is of utmost importance in wet processing. In light of this, an ATR-FTIR based method has been developed to unambiguously distinguish between wetting and non-wetting states.

High aspect ratio hydrogenation-assisted lateral etching of (1 0 0) silicon substrates

2011 ◽  
Vol 21 (7) ◽  
pp. 074003 ◽  
Author(s):  
M Kayyalha ◽  
J Naghsh Nilchi ◽  
A Ebrahimi ◽  
S Mohajerzadeh
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon Substrates

SU-8 Processing on a Variety of Substrates

1999 ◽  
Vol 605 ◽  
Author(s):  
Yuh-Min Chiang ◽  
Mark Bachman ◽  
Hung-Pin Chang ◽  
Charles Chu ◽  
G. P. Li
Keyword(s):  
Surface Tension ◽  
Aspect Ratio ◽  
Surface Properties ◽  
Silicon Wafer ◽  
Environmental Conditions ◽  
High Aspect Ratio ◽  
Silicon Substrates

AbstractSU-8 has become a popular material for micromachining high aspect ratio structures. Typically, SU-8 is spun on a polished silicon wafer for processing. After patterning, the SU-8 is used for micromachined structures directly (such as fluidic channels) or as a mold for electroforming. Non-silicon substrates offer the possibility of cheaper processing, improved mold designs, and multi-material devices. Successful SU-8 processing depends strongly on surface properties of the substrate itself as well as environmental conditions during the processing. We explore the issues involved in transferring SU-8 technology to non-silicon substrates such as glass, plastics and metals. Issues such as wettability, adhesion, and surface tension are explored in this study. The findings indicate the merits of non-spinning approaches, such as dipping, spraying, and brushing and point to new SU-8 processes.

FABRICATION OF PERIODIC STANDING ROD ARRAYS BY THE SHADOW CONE METHOD

2006 ◽  
Vol 05 (06) ◽  
pp. 815-819 ◽  
Author(s):  
HIROFUMI TANAKA ◽  
PAUL S. WEISS ◽  
MARK W. HORN
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Low Cost ◽  
Industrial Applications ◽  
Silicon Substrates ◽  
Simple Method ◽  
Periodic Arrays

A simple method for fabricating periodic arrays of high aspect ratio (1:20) standing nanorods on silicon substrates is described. It is based on shadow deposition onto periodically arranged arrays of mini-rods on a rotating sample stage. Consequently, such nanostructures can be prepared on relatively large areas and at low cost, making the method suitable for industrial applications.

Sharp Needles: Fabrication of Tungsten Nanotips by AC Electrochemical Etching and Laser Enhanced Etching for Nanoprobing on Interconnects of Advanced Technology Nodes.

2013 ◽  
Vol 1553 ◽  
Author(s):  
M. K. Dawood ◽  
Z.H. Mai ◽  
T. H. Ng ◽  
H. Tan ◽  
P.K. Tan ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Laser Irradiation ◽  
High Aspect Ratio ◽  
Electrochemical Etching ◽  
Etching Process ◽  
Advanced Technology ◽  
Radius Of Curvature ◽  
20 Nm ◽  
Technology Nodes ◽  
Contact Size

ABSTRACTSharper nanotips are required for application in nanoprobing systems due to a shrinking contact size with each new transistor technology node. We describe a two-step etching process to fabricate W nanotips with controllable tip dimensions. The first process is an optimized AC electrochemical etching in KOH to fabricate nanotips with a radius of curvature (ROC) down to 90 nm. This was followed by a secondary nanotip sharpening process by laser irradiation in KOH. High aspect ratio nanotips with ROC close to 20 nm were obtained. Finally we demonstrate the application of the fabricated nanotips for nanoprobing on advanced technology SRAM devices.

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