Copper Catalysis Effect Investigation for TiW Etch Process on Patterned Wafers

2021 ◽  
Vol 314 ◽  
pp. 282-288
Author(s):  
Ivan Venegoni ◽  
Annamaria Votta ◽  
Enrico Bellandi ◽  
Francesco Pipia ◽  
Mauro Alessandri
Keyword(s):  
Transition Metal ◽  
Cycle Time ◽  
Etch Rate ◽  
Decomposition Reaction ◽  
Copper Catalysis ◽  
Patterned Wafers ◽  
Tof Sims ◽  
Cost Of Ownership ◽  
Sem And Tem

The use of various H2O2 based chemistries for TiW etch was studied on single wafer and wet bench tools. The focus of the investigation was put on the different behaviors of these chemicals on blanket and patterned wafers. The results of the etch rate tests showed much higher values on the wafers where copper was exposed, leading to the hypothesis that the etch rate on TiW should be driven by the catalysis effect of the transition metal on the H2O2 decomposition reaction. Additional optical inspections, ToF SIMS, SEM and TEM analyses were carried out to confirm this hypothesis and find the best conditions in terms of morphology for RDL applications. Finally, the collected data were also used to evaluate the process cycle time and cost of ownership.

ChemInform Abstract: Efficient Domino Synthesis of Benzimidazole Derivatives: Copper Catalysis versus Transition Metal-Free Conditions.

ChemInform ◽  
2015 ◽  
Vol 46 (29) ◽  
pp. no-no
Author(s):  
Haiquan Liu ◽  
Jiaming Tang ◽  
Liu Jiang ◽  
Tingting Zheng ◽  
Xiaoxia Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Benzimidazole Derivatives ◽  
Copper Catalysis ◽  
Metal Free ◽  
Versus Transition

Efficient domino synthesis of benzimidazole derivatives: copper catalysis versus transition metal-free conditions

2015 ◽  
Vol 56 (13) ◽  
pp. 1624-1630 ◽  
Author(s):  
Haiquan Liu ◽  
Jiaming Tang ◽  
Liu Jiang ◽  
Tingting Zheng ◽  
Xiaoxia Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Benzimidazole Derivatives ◽  
Copper Catalysis ◽  
Metal Free ◽  
Versus Transition

Direct NO decomposition over stepped transition-metal surfaces

2007 ◽  
Vol 79 (11) ◽  
pp. 1895-1903 ◽  
Author(s):  
Hanne Falsig ◽  
Thomas Bligaard ◽  
Claus H. Christensen ◽  
Jens K. Nørskov
Keyword(s):  
Transition Metal ◽  
Potential Energy ◽  
Metal Surfaces ◽  
Decomposition Reaction ◽  
No Decomposition ◽  
Full Potential ◽  
Activation Barriers ◽  
Energy Diagram ◽  
Transition Metal Surfaces ◽  
Potential Energy Diagram

We establish the full potential energy diagram for the direct NO decomposition reaction over stepped transition-metal surfaces by combining a database of adsorption energies on stepped metal surfaces with known Brønsted-Evans-Polanyi (BEP) relations for the activation barriers of dissociation of diatomic molecules over stepped transition- and noble-metal surfaces. The potential energy diagram directly points to why Pd and Pt are the best direct NO decomposition catalysts among the 3d, 4d, and 5d metals. We analyze the NO decomposition reaction in terms of a Sabatier-Gibbs-type analysis, and we demonstrate that this type of analysis yields results that to within a surprisingly small margin of error are directly proportional to the measured direct NO decomposition over Ru, Rh, Pt, Pd, Ag, and Au. We suggest that Pd, which is a better catalyst than Pt under the employed reaction conditions, is a better catalyst only because it binds O slightly weaker compared to N than the other metals in the study.

Isotopic studies of the ammonia decomposition reaction mediated by sodium amide

2015 ◽  
Vol 17 (35) ◽  
pp. 22999-23006 ◽  
Author(s):  
Thomas J. Wood ◽  
Joshua W. Makepeace ◽  
Hazel M. A. Hunter ◽  
Martin O. Jones ◽  
William I. F. David
Keyword(s):  
Transition Metal ◽  
Isotope Effect ◽  
Kinetic Isotope Effect ◽  
Reaction Pathway ◽  
Decomposition Reaction ◽  
Transition Metal Catalysts ◽  
Ammonia Decomposition ◽  
Kinetic Isotope ◽  
Isotopic Studies ◽  
Sodium Amide

Ammonia decomposition by sodium amide shows a significant primary kinetic isotope effect, indicating an alternative reaction pathway than for transition metal catalysts.

Process Control for Wet Etching for Silicon Wafer Thinning

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001030-001053
Author(s):  
Laura Mauer ◽  
Herman Itzkowitz ◽  
John Taddei
Keyword(s):  
Process Control ◽  
Silicon Wafer ◽  
Etch Rate ◽  
Wet Etching ◽  
Etching Solution ◽  
Control Techniques ◽  
Cost Of Ownership ◽  
The Cost ◽  
Wet Etch ◽  
Wafer Thinning

Thin wafers have become a basic need for a wide variety of new microelectronic products. Thinner die are being required to fit into thinner packages. Wafers that have been thinned using a final wet etch process on the backside have less stress compared with standard mechanical backgrinding. Isotropic wet etching of silicon is typically done with a mixture of nitric and hydrofluoric acids along with the addition of chemicals to adjust for viscosity and surface wettability for single wafer spin processing. As the silicon is etched and incorporated in the etching solution the etch rate will decrease with time. This variation has been modeled. The focus of this paper is to compare the process control techniques for maintaining a consistent etch rate as a function of time and wafers processed. The models allow for either the time to be extended, chemicals to be replenished or a combination of these. Results will be presented including the cost of ownership for each scenario.

Capabilities of static TOF-SIMS in the differentiation of first-row transition metal oxides

2001 ◽  
Vol 36 (6) ◽  
pp. 641-651 ◽  
Author(s):  
Fr�d�ric Aubriet ◽  
Claude Poleunis ◽  
Patrick Bertrand
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Tof Sims

HREM Study of electron-induced surface radiation damage in ReO3

1991 ◽  
Vol 49 ◽  
pp. 636-637
Author(s):  
R. Ai ◽  
H.-J. Fan ◽  
L. D. Marks
Keyword(s):  
Transition Metal ◽  
Metal Ions ◽  
Metal Oxides ◽  
Electron Irradiation ◽  
Transition Metal Oxides ◽  
Carbon Film ◽  
Transition Metal Ions ◽  
Surface Radiation ◽  
Valence Transition ◽  
Electron Microscopes

It has been known for a long time that electron irradiation induces damage in maximal valence transition metal oxides such as TiO2, V2O5, and WO3, of which transition metal ions have an empty d-shell. This type of damage is excited by electronic transition and can be explained by the Knoteck-Feibelman mechanism (K-F mechanism). Although the K-F mechanism predicts that no damage should occur in transition metal oxides of which the transition metal ions have a partially filled d-shell, namely submaximal valence transition metal oxides, our recent study on ReO3 shows that submaximal valence transition metal oxides undergo damage during electron irradiation.ReO3 has a nearly cubic structure and contains a single unit in its cell: a = 3.73 Å, and α = 89°34'. TEM specimens were prepared by depositing dry powders onto a holey carbon film supported on a copper grid. Specimens were examined in Hitachi H-9000 and UHV H-9000 electron microscopes both operated at 300 keV accelerating voltage. The electron beam flux was maintained at about 10 A/cm2 during the observation.

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