Growth of Polycrystalline Silicon Films at High Deposition Rate and Low Temperature by Hot Wire Chemical Vapour Deposition

1996 ◽  
Vol 51-52 ◽  
pp. 255-260 ◽  
Author(s):  
A.R. Middya ◽  
J. Guillet ◽  
J.E. Bouree ◽  
J. Perrin
Keyword(s):  
Low Temperature ◽  
Deposition Rate ◽  
Chemical Vapour Deposition ◽  
Polycrystalline Silicon ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Silicon Films ◽  
High Deposition Rate ◽  
Hot Wire ◽  
Polycrystalline Silicon Films

scholarly journals Polycrystalline silicon films obtained by hot-wire chemical vapour deposition

1994 ◽  
Vol 59 (6) ◽  
pp. 645-651 ◽  
Author(s):  
J. Cifre ◽  
J. Bertomeu ◽  
J. Puigdollers ◽  
M. C. Polo ◽  
J. Andreu ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Polycrystalline Silicon ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Silicon Films ◽  
Hot Wire ◽  
Polycrystalline Silicon Films

Photoconductive Polycrystalline Silicon Films on Glass Obtained by Hot-Wire CVD

1996 ◽  
Vol 420 ◽  
Author(s):  
A. R. Middya ◽  
J. Guillet ◽  
J. Perrin ◽  
J. E. Bouree
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapour ◽  
Columnar Structure ◽  
Silicon Films ◽  
High Deposition Rate ◽  
Hot Wire ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
Deposited Films

AbstractTextured polycrystalline silicon films with columnar structure have been deposited on glass at low temperature (400–550°C) and high deposition rate (10 to 15 Å/s) by hot-wire chemical vapour deposition using SiH4-H2 gases. The homogeneity of the deposited layer is ± 5% on a 8 cm diameter. As deposited films have a poor photoconductivity. However hydrogen confinement in the films during the deposition or after the deposition is found to be the key for obtaining g.tc/poly-Si with a significant diffusion length. Eventually reasonable values of the mobility lifetime product (> 10−7 cm2/V) are obtained by in situ hydrogen passivation of poly-Si films after deposition. Efficient shifting of the Fermi level is achieved by in situ B or P doping. The incorporation of boron in poly-Si network strongly influences the morphology and the crystalline structure. Undoped films have a Hall mobility of 14 ± 5 cm2/V.s which decreases versus the carrier concentration.

Fast Deposition of Polycrystalline Silicon Films by Hot-Wire CVD

1995 ◽  
Vol 377 ◽  
Author(s):  
A. R. Middya ◽  
A. Lloret ◽  
J. Perrin ◽  
J. Huc ◽  
J. L. Moncel ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Polycrystalline Silicon ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hot Wire ◽  
Crystalline Orientation ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Si Films ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon thin films have been deposited at fast growth rates (50 Å/s) by hotwire chemical vapour deposition (HW-CVD) from SiH4/H2 gas mixtures at low substrate temperature (400–500°C). The surface morphology of these films consists of 0.5 – 2.0μm dendritic grains as seen by electron microscopy. The films have a columnar morphology with grains starting from the substrate either on glass or c-Si. Even the 150 nm thick initial layer is polycrystalline. The preferential crystalline orientation of the poly-Si film is apparently not governed by the radiative source but strongly depends on the type and orientation of the substrate. A strong hydrogen dilution (>90%) of silane is essential to obtain poly-Si films with optimal crystalline structure.

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