NOVEL HIGH TEMPERATURE ANNEALED SCHOTTKY METAL FOR GaN DEVICES

2011 ◽  
Vol 20 (03) ◽  
pp. 417-422
Author(s):  
QUENTIN DIDUCK ◽  
IAN WALSH ◽  
DUBRAVKO BABIĆ ◽  
LESTER F. EASTMAN
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Metal System ◽  
Gan Hemt ◽  
Order Of Magnitude ◽  
Alignment Marks

We have found that Scandium metal is near ohmic as deposited on GaN , but when it is annealed at high temperatures a large barrier height Schottky forms. In this study we used Sc - Au contacts to form Schottky barrier diodes on AlGaN / GaN HEMT material. We have found that the morphology remains unchanged even after an 800 degrees centigrade anneal. This investigation has revealed that the reverse leakage current of this metal system is an order of magnitude lower than a conventional Ni - Au contact and supports a reverse breakdown that is 1/3rd larger. The similarity of the anneal temperatures to ohmic contacts enable gates and contacts to be annealed at the same time thus simplifying processing. The lack of morphology change supports the use of Sc - Au for E -beam alignment marks as well. Diode contacts on AlGaN / GaN with Schottky-ohmic separation of 10 microns demonstrated reverse breakdown in excess of 100V when the contacts were annealed at 800C. These results suggest this metallization may have applications as a new HEMT gate metal, and Schottky diodes.

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

scholarly journals Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation

2019 ◽  
Vol 5 (10) ◽  
pp. eaax5733 ◽  
Author(s):  
T. Harada ◽  
S. Ito ◽  
A. Tsukazaki
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Extreme Environments ◽  
Oxide Interface ◽  
Electric Dipoles ◽  
Bandgap Semiconductors ◽  
High Temperature Operation

High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Metal Electrode ◽  
Reverse Leakage Current ◽  
Electrode Interface ◽  
The Relationship

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

scholarly journals High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

2019 ◽  
Vol 9 (8) ◽  
pp. 1587
Author(s):  
Rahimah Mohd Saman ◽  
Sharaifah Kamariah Wan Sabli ◽  
Mohd Rofei Mat Hussin ◽  
Muhammad Hilmi Othman ◽  
Muhammad Aniq Shazni Mohammad Haniff ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Barrier Layer ◽  
Ideality Factor ◽  
Schottky Barrier Height ◽  
Series Resistance ◽  
Measurement Data ◽  
Industrial Sectors

Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

Electrical Properties of Homoepitaxial Diamond Films

1989 ◽  
Vol 162 ◽  
Author(s):  
G. Sh. Gildenblat ◽  
S. A. Grot ◽  
C. W. Hatfield ◽  
C. R. Wronski ◽  
A. R. Badzian ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Diamond Films ◽  
Diamond Surface ◽  
Electrical Characteristics ◽  
Boron Doped ◽  
Process Formation ◽  
Conductive State

ABSTRACTWe describe the electrical characteristics of boron doped homoepitaxial diamond films fabricated using a plasma assisted CVD process, formation of ohmic contacts, high temperature (580°C) Schottky diodes, and a rudimentary diamond MESFET. We also report reversible changes of the conductive state of the diamond surface by various surface treatments for both natural and thin-film diamonds.

Barrier Height Control and X-Ray Diffraction Study of Metal on Si1−Gex/Si Grown by Very Low Pressure CVD

1995 ◽  
Vol 402 ◽  
Author(s):  
Z. Q. Shiâ ◽  
L. He ◽  
Y. Zheng
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Control Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Height Control ◽  
Barrier Formation

AbstractThe potential application of epitaxial Si1−xGex, on Si in electronic and optoelectronic devices has led to an increased study of metal - Si1−xGex interaction and barrier height control technique. In this paper, we report the epitaxial growth of Si1−xGex on Si and the Schottky barrier formation processing. The Si1−xGex (x=0.17 and 0.20) layers were grown by rapid radiant heating, very low pressure chemical vapor deposition (VLPCVD). The crystal structure and epitaxial nature of the Si1−xGex, layers were studied by X-Ray diffraction. The value of full width at half maximum (FWHM) was found to be 0.34° for the as grown Si1−xGex (400) peak. The metal-Si1−xGex/Si Schottky diodes were formed by depositing Pd on Si1−xGex/Si at room temperature (RT=300K) and low temperature (LT=77K). The Schottky barrier heights and current transport mechanisms were determined by current-voltage-temperature (I-V-T) measurements. The interface property of Pd/ Si1−xGex/Si were studied as a function of metal deposition and post annealing temperatures.

Sign in / Sign up

Export Citation Format

Share Document