scholarly journals Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes

2021 ◽  
Vol 24 (04) ◽  
pp. 399-406
Author(s):  
A.M. Goriachko ◽  
◽  
M.V. Strikha ◽  
◽  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Field Plate ◽  
Reverse Leakage Current ◽  
Plate Length ◽  
Fabrication Procedure ◽  
Field Oxide

This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes

2020 ◽  
Vol 1014 ◽  
pp. 144-148
Author(s):  
Ling Sang ◽  
Jing Hua Xia ◽  
Liang Tian ◽  
Fei Yang ◽  
Rui Jin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Oxidation Process ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Field Plate ◽  
Plate Length ◽  
Field Oxide

The effect of the field oxidation process on the electrical characteristics of 6500V 4H-SiC JBS diodes is studied. The oxide thickness and field plate length have an effect on the reverse breakdown voltage of the SiC JBS diode. According the simulation results, we choose the optimal thickness of the oxide layer and field plate length of the SiC JBS diode. Two different field oxide deposition processes, which are plasma enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition (LPCVD), are compared in our paper. When the reverse voltage is 6600V, the reverse leakage current of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 0.7 μA, which is 60% lower than that of PECVD process. When the forward current is 25 A, the forward voltage of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 3.75 V, which is 10% higher than that of PECVD process. There should be a trade-off between the forward and reverse characteristics in the actual high power and high temperature applications.

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN

2006 ◽  
Vol 517 ◽  
pp. 242-246
Author(s):  
C.K. Tan ◽  
Azlan Abdul Aziz ◽  
F.K. Yam ◽  
C.W. Lim ◽  
Hassan Zainuriah ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Barrier Heights

Pd Schottky diode exhibited stable rectifying behavior up to 500°C for 35 minutes in sequential annealing; with the Schottky barrier heights (SBHs), ΦB (I-V) of 0.6-0.7eV with the leakage current (LC) of 20 A at -5V. With the same range of SBHs, PdSi diodes were stable up to 500°C for 5 minutes with the LC of 0.182mA at -5V. The electrical characteristics obtained in this study are also compared with those obtained for Pd and PdSi Schottky diodes on p-GaN.

β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

2021 ◽  
Vol 118 (12) ◽  
pp. 122102
Author(s):  
Qinglong Yan ◽  
Hehe Gong ◽  
Jincheng Zhang ◽  
Jiandong Ye ◽  
Hong Zhou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Current Modulation ◽  
Reverse Leakage Current

Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

2005 ◽  
Vol 252 (4) ◽  
pp. 1153-1158 ◽  
Author(s):  
Enise Ayyildiz ◽  
Hidayet Cetin ◽  
Zs. J. Horváth
Keyword(s):  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Temperature Dependent

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Metal Electrode ◽  
Reverse Leakage Current ◽  
Electrode Interface ◽  
The Relationship

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

A new process for decreasing reverse leakage current of PtSi/Si power Schottky diodes

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1094
Author(s):  
Zhao Shulan ◽  
Yu Jiafong ◽  
Yang Yali ◽  
Liu Shuqin ◽  
Liu Shuqin ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diodes ◽  
Reverse Leakage Current ◽  
New Process
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