scholarly journals Growth of Cubic Boron Nitride Single Crystal under High Pressure using Temperature Gradient Method.

1998 ◽  
Vol 7 ◽  
pp. 980-982 ◽  
Author(s):  
T. Taniguchi ◽  
S. Yamaoka
1997 ◽  
Vol 472 ◽  
Author(s):  
T. Taniguchi ◽  
S. Yamaoka

ABSTRACTSingle crystal cubic boron nitride(cBN) was heteroepitaxially grown on a seed crystal of diamond under static high pressure and high temperature of 5.5GPa and 1600–1700°C, respectively, for 10–100 hour. A temperature gradient method was employed for the crystal growth by using lithium boron nitride as a solvent. Initial growth feature of cBN crystal was found on the diamond seed surface after the growing time of 10 minutes. The nucleation sites of the crystals seem to be near the etch pits on the diamond surface which were introduced by the surface dissolution by the solvent for cBN growth. Two types of growth features, island and step growth were typically shown on the surface. It can be seen that grown crystal appearing as a (111) nitrogen face was exhibited with the step growth feature, while the (11n) face exhibited the island growth feature. Considering the growth process under constant P-T growing condition, growth rate of cBN crystal was significantly small as compared to that of diamond.


CrystEngComm ◽  
2017 ◽  
Vol 19 (31) ◽  
pp. 4571-4575 ◽  
Author(s):  
Meihua Hu ◽  
Ning Bi ◽  
Shangsheng Li ◽  
Taichao Su ◽  
Qiang Hu ◽  
...  

In this study, diamond crystals co-doped with boron and nitrogen were synthesized via a temperature gradient method at 5.3–5.8 GPa and 1300–1550 °C by adding B and N dopants to a system of carbon and an Fe-based solvent catalyst.


2007 ◽  
Vol 46 (11) ◽  
pp. 7388-7391 ◽  
Author(s):  
Yoichi Kubota ◽  
Kosuke Kosuda ◽  
Takashi Taniguchi

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