Heteroepitaxial Growth of Cubic Boron Nitride Single Crystal on Diamond Seed Under High Pressure

1997 ◽  
Vol 472 ◽  
Author(s):  
T. Taniguchi ◽  
S. Yamaoka
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Single Crystal ◽  
Cubic Boron Nitride ◽  
Diamond Surface ◽  
Initial Growth ◽  
Etch Pits ◽  
Step Growth ◽  
Growth Feature ◽  
Cbn Crystal

ABSTRACTSingle crystal cubic boron nitride(cBN) was heteroepitaxially grown on a seed crystal of diamond under static high pressure and high temperature of 5.5GPa and 1600–1700°C, respectively, for 10–100 hour. A temperature gradient method was employed for the crystal growth by using lithium boron nitride as a solvent. Initial growth feature of cBN crystal was found on the diamond seed surface after the growing time of 10 minutes. The nucleation sites of the crystals seem to be near the etch pits on the diamond surface which were introduced by the surface dissolution by the solvent for cBN growth. Two types of growth features, island and step growth were typically shown on the surface. It can be seen that grown crystal appearing as a (111) nitrogen face was exhibited with the step growth feature, while the (11n) face exhibited the island growth feature. Considering the growth process under constant P-T growing condition, growth rate of cBN crystal was significantly small as compared to that of diamond.

Effect of Al on the Formation of Cubic Boron Nitride Using Ni3Al Solvent under High Pressure

2007 ◽  
Vol 46 (11) ◽  
pp. 7388-7391 ◽  
Author(s):  
Yoichi Kubota ◽  
Kosuke Kosuda ◽  
Takashi Taniguchi
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Cubic Boron Nitride

Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure

2002 ◽  
Vol 81 (22) ◽  
pp. 4145-4147 ◽  
Author(s):  
T. Taniguchi ◽  
K. Watanabe ◽  
S. Koizumi ◽  
I. Sakaguchi ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Single Crystals ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Cubic Boron Nitride ◽  
Self Organized ◽  
Bulk Single Crystals

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

scholarly journals Production of alumo-matrix composite material modified by nanostructured cubic boron nitride

2018 ◽  
Vol 63 (3) ◽  
pp. 271-279
Author(s):  
P. A. Vityaz ◽  
V. T. Senyut ◽  
M. L. Kheifetz ◽  
A. G. Kolmakov
Keyword(s):  
High Pressure ◽  
Aluminum Alloy ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Aluminum Matrix ◽  
Treatment Temperature ◽  
Chemical Affinity ◽  
High Temperature Annealing ◽  
High Pressure And Temperature ◽  
Primary Particles

The structure and microhardness of an aluminum alloy with additives of nanostructured cubic boron nitride (cBN) after treatment under high pressure and temperature are investigated. А nanostructured powder of cBN with primary particles within 50–200 nm is used as a filler. A preliminary chemical-thermal modifying of the nanostructured cBN, which consists in its high-temperature annealing in the temperature range of 750–950 °C in a medium of aluminum-contai ning compounds, is carried out to increase the chemical affinity of the nanostructured cBN to the aluminum matrix. It is shown that the modifying of nanostructured cBN with aluminum increases the strength of the additives retention in the aluminum matrix. At the same time the increase in the concentration of BN additives from 1.5 to 5 wt.% as well as the increase in the treatment temperature at a fixed pressure promotes the increase in the microhardness of the material by a factor of 1.5 to 2 as compared with the base aluminum alloy without the addition of a modifier. An increase in the cBN concentration to 5 % by weight results in an increase in the fraction of smaller particle conglomerates (1–5 μm) in the material and in a decrease in the size of large inclusions to 10–20 μm. In this case, the distribution of BN particles in the aluminum matrix is more uniform in comparison with a material with a cBN content of 1.5 wt.%. In the material with the growth of temperature up to 1000 °С, cBN in aggregates is recrystallized with the formation of single-crystal (polycrystalline) particles with the size of 1–10 μm  with faceting specific for cBN micron particles.

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