Synthesis of large diamond crystals containing high-nitrogen concentration at high pressure and high temperature using Ni-based solvent by temperature gradient method

2010 ◽  
Vol 19 (11) ◽  
pp. 118101 ◽  
Author(s):  
Guo-Feng Huang ◽  
Xiao-Peng Jia ◽  
Shang-Sheng Li ◽  
Ya-Fei Zhang ◽  
Yong Li ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Temperature Gradient ◽  
Gradient Method ◽  
Nitrogen Concentration ◽  
High Nitrogen ◽  
Diamond Crystals ◽  
High Nitrogen Concentration ◽  
Temperature Gradient Method ◽  
Large Diamond

Effect of Ni70Mn25Co5 or Fe55Ni29Co16 on the Growth of Type-II a Large Diamonds with Al as Nitrogen Getter

2011 ◽  
Vol 266 ◽  
pp. 89-92
Author(s):  
Shang Sheng Li ◽  
Ning Luo ◽  
Xiao Lei Li ◽  
Tai Chao Su ◽  
You Mou Zhou ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Pressure ◽  
High Temperature ◽  
Temperature Gradient ◽  
Nitrogen Concentration ◽  
Type Ii ◽  
High Quality ◽  
Quality Type ◽  
Temperature Gradient Method ◽  
Large Diamond

With adopting Al as the nitrogen getter in Ni70Mn25Co5 or Fe55Ni29Co16 catalyst, High-quality type-Ⅱa large diamonds have been grown under the conditions of about 5.5GPa and 1580K by using the temperature gradient method. While Al(2.0wt%) is added in the Fe55Ni29Co16, the nitrogen concentration(Nc) in the diamond is less than 1ppm. While Al(4.0wt%) is added in the Ni70Mn25Co5, the Nc in the diamond is highly arrived at 48ppm. The different of solubility of nitrogen in both catalyst at high pressure and high temperature is the basic reason of the different effect of eliminating nitrogen of Al. It can be shown in experamentals that Al is a less efficient nitrogen getter in Ni70Mn25Co5 than in Fe55Ni29Co16. While Al(2.0wt%) is added in the Fe55Ni29Co16, the high-quality type-Ⅱa large diamond, in which nitrogen is less than 1ppm and which the size was arrived at 3.3mm, had grown by decreasing the growth rate of diamond.

Synthesis and characterization of boron and nitrogen co-doped diamond crystals under high pressure and high temperature conditions

CrystEngComm ◽  
2017 ◽  
Vol 19 (31) ◽  
pp. 4571-4575 ◽  
Author(s):  
Meihua Hu ◽  
Ning Bi ◽  
Shangsheng Li ◽  
Taichao Su ◽  
Qiang Hu ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Temperature Gradient ◽  
Gradient Method ◽  
Synthesis And Characterization ◽  
Temperature Conditions ◽  
Diamond Crystals ◽  
Temperature Gradient Method ◽  
Co Doped

In this study, diamond crystals co-doped with boron and nitrogen were synthesized via a temperature gradient method at 5.3–5.8 GPa and 1300–1550 °C by adding B and N dopants to a system of carbon and an Fe-based solvent catalyst.

HPHT Growth and IR Characterizaton of Large Diamond Crystals in FeNi-C-FeS Systems

2011 ◽  
Vol 339 ◽  
pp. 491-495
Author(s):  
Chuan Yi Zang ◽  
Lun Jian Chen ◽  
Li Xue Chen
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Content ◽  
Diamond Crystals ◽  
Growth System ◽  
Negative Effect ◽  
Temperature Gradient Method ◽  
Co Doped ◽  
Large Diamond

By temperature gradient method (TGM), with Invar alloy as solvent catalyst, FeS and boron as additives, large diamond crystals are grown under high pressure and high temperature (HPHT) of about 5.4GPa and 1550K. With the content of FeS increased, the colors of grown crystals would be changed from transparent yellow to opaque gray-black, and the quality of diamond crystals could also be destroyed markedly. When both boron and FeS co-doped, the negative effect of FeS on crystal quality could be eliminated somewhat. To a certain content of FeS, with the boron content increased, the crystal color would be changed from opaque gray-black to transparent yellow, and boron content needed is related directly to FeS content in growth systems. The nitrogen content in diamond lattice decreases greatly, with FeS content increased in the growth system, and a 1050cm-1 absorption peak in IR spectrum is also present in diamond crystals grown in FeNi-FeS-C system.

Effects of phosphorus doping via Mn3P2 on diamond growth along the (100) surfaces

CrystEngComm ◽  
2019 ◽  
Vol 21 (44) ◽  
pp. 6810-6818 ◽  
Author(s):  
Kunpeng Yu ◽  
Shangsheng Li ◽  
Qun Yang ◽  
Kunqiu Leng ◽  
Meihua Hu ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Gradient Method ◽  
Diamond Growth ◽  
Phosphorus Doping ◽  
Diamond Crystals ◽  
Temperature Gradient Method

In this study, n-type diamond crystals were synthesized via the temperature gradient method at 5.6 GPa and 1230–1245 °C by adding a Mn3P2 dopant and FeNi catalyst.

Synthesis of large diamond single crystals under high pressure and high temperature through effective utilization of the synthesis cavity

CrystEngComm ◽  
2018 ◽  
Vol 20 (29) ◽  
pp. 4127-4132 ◽  
Author(s):  
Yong Li ◽  
Yadong Li ◽  
Ying Wang ◽  
Jie Zhang ◽  
Mousheng Song ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystals ◽  
Production Efficiency ◽  
Effective Utilization ◽  
Diamond Crystals ◽  
Diamond Single Crystals ◽  
Large Diamond

To make maximal use of the synthesis cavity and improve the production efficiency, we designed the double seed bed method to synthesize large diamond crystals under high pressure and high temperature (HPHT) conditions, and the results were both theoretically calculated and verified by experiments.

Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

1999 ◽  
Vol 567 ◽  
Author(s):  
S. C. Song ◽  
C. H. Lee ◽  
H. F. Luan ◽  
D. L. Kwong ◽  
M. Gardner ◽  
...  
Keyword(s):  
High Pressure ◽  
Gate Dielectrics ◽  
Nitrogen Concentration ◽  
Budget Process ◽  
High Nitrogen ◽  
High Quality ◽  
Thermal Budget ◽  
Hot Carrier ◽  
Low Thermal Budget ◽  
High Nitrogen Concentration

ABSTRACTIn this paper, we report a novel low thermal budget process (<800°C) for engineered ultra thin oxynitride dielectrics with high nitrogen concentration (>5% a.c.) using vertical high pressure (VHP) process. VHP grown oxynitride films show >1 OX lower leakage current, higher drive current and superior hot-carrier reliability compared to control SiO2 of identical thickness (Tox,eq) grown by RTP in O2.

Growth and Characterization of Bulk GaN Crystals at High Pressure and High Temperature

2003 ◽  
Vol 798 ◽  
Author(s):  
M. P. D'Evelyn ◽  
K. J. Narang ◽  
D.-S. Park ◽  
H. C. Hong ◽  
M. Barber ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Temperature Gradient ◽  
Sapphire Substrate ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Crystals ◽  
Diamond Crystals ◽  
Dislocation Densities ◽  
Bulk Gan

ABSTRACTWe report the growth and characterization of bulk GaN single crystals by temperature-gradient recrystallization at high pressure and high temperature (HPHT), using apparatus adapted from that used to synthesize gem-grade diamond crystals. The bulk crystals are grown on seeds that were synthesized by hydride vapor phase epitaxy (HVPE) and subsequently removed from their sapphire substrate. Our largest crystals to date are 15×18 mm in diameter; however, the process is scalable to 50 mm and above. The crystals are transparent and well faceted, and dislocation densities below 100 cm−2 have been achieved. Additional characterization of the GaN crystals is also presented.

Sign in / Sign up

Export Citation Format

Share Document