The Bonding Structure of the Various High Purity or Binderless Polycrystalline Cubic Boron Nitride Compacts Sintered at 5 to 7GPa and 1600 to 2000 °C

The cBN-cBN direct bonding structure of some cBN compacts made by the method of the direct conversion of the pyrolytic-BN (pBN) or wurtzite-BN (wBN) to cubic-BN at the pressure of 7GPa and temperature 2000 °C and the cBN compact made by the method of sintering the cBN powder along with polyvinylidene chloride (PVDC) at the condition of 5.5GPa and 1600 °C has been studied. The XRD, SEM, TEM analysis and the wear resistance on the ductile cast iron machining has been investigated. While the XRD analysis of the above cBN samples showed that all samples consist only of cBN, and the SEM observation showed that they all have the cBN-cBN direct bonding structure, A STEM analysis showed the existence of the impurities at the cBN crystal boundary. The starting materials and the sintering method affect the degree of these impurities.

A New CBN Crystal for Improved Grinding Performance in Vitrified Bonds

The use of cubic boron nitride (CBN) over conventional abrasives in ferrous and superalloy grinding has resulted in improved manufacturing throughput and beneficial mechanical properties on workpiece surfaces. However, through the innovative use of crystal synthesis techniques, the grinding performance can be further improved over existing CBN crystals. In this study, such a new CBN crystal is developed, characterized, and its grinding performance is compared to a commercially available CBN crystal. Grinding tests are conducted in AISI M2 steel and Inconel-718 superalloy using a vitrified bond configuration with applicability in a wide range of end-use applications.

Heteroepitaxial Growth of Cubic Boron Nitride Single Crystal on Diamond Seed Under High Pressure

ABSTRACTSingle crystal cubic boron nitride(cBN) was heteroepitaxially grown on a seed crystal of diamond under static high pressure and high temperature of 5.5GPa and 1600–1700°C, respectively, for 10–100 hour. A temperature gradient method was employed for the crystal growth by using lithium boron nitride as a solvent. Initial growth feature of cBN crystal was found on the diamond seed surface after the growing time of 10 minutes. The nucleation sites of the crystals seem to be near the etch pits on the diamond surface which were introduced by the surface dissolution by the solvent for cBN growth. Two types of growth features, island and step growth were typically shown on the surface. It can be seen that grown crystal appearing as a (111) nitrogen face was exhibited with the step growth feature, while the (11n) face exhibited the island growth feature. Considering the growth process under constant P-T growing condition, growth rate of cBN crystal was significantly small as compared to that of diamond.