Anthracene dopping effects on thin films properties of octakis(alkylthio) substituted lutetium bisphthalocyanine

2013 ◽  
Vol 17 (06n07) ◽  
pp. 454-459 ◽  
Author(s):  
Aseel Hassan ◽  
Tamara Basova ◽  
Ayşe Gül Gürek ◽  
Vefa Ahsen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Organic Solar Cells ◽  
Electronic Device ◽  
Structural Features ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Device Applications

In this work, the investigation of structural features, spectral and electrical properties of spin-coated films of substituted lutetium bisphthalocyanine Lu ( Pc ( SR )8)2, where R = - C 6 H 13 was carried out. The current-voltage characteristics of ITO/ Lu ( Pc ( SR )8)2/ Al film sandwich structures were measured over the temperature range 120–380 K. AC electrical properties, mainly the dependence of conductance and capacitance on frequency and temperature are also discussed. Structural and electrical properties of anthracene-doped Lu ( Pc ( SR )8)2, films have also been investigated. Furthermore, optical properties of thin films of pure and anthracene-doped Lu ( Pc ( SR )8)2 films were also studied using spectroscopic ellipsometry, while atomic force microscopy (AFM) was used to study changes in films' morphology of doped films and compared with that of undoped films. Doping Lu ( Pc ( SR )8)2, films with anthracene is shown to lead to an increase in films' conductivity. These studies will provide full understanding of the physical properties of the Lu ( Pc ( SR )8)2, thin films, both doped and undoped, with the aim of exploitation in electronic device applications, such as fabrication of all organic solar cells.

Crystalline Grains and Electrical Properties of Vacuumevaporated SnO2Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
W. K. Man ◽  
H. Yan ◽  
S. P. Wong ◽  
T. K. S. Wong ◽  
I. H. Wilson
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Grain Growth ◽  
Metal Films ◽  
3 Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diode Ideality Factor ◽  
Current Voltage ◽  
Tin Metal

AbstractWe have studied grain growth and electrical properties of polycrystalline tin oxide (SnO2) thin films prepared by vacuum-evaporation with a two-step process: evaporation of tin metal films and then oxidation of these metal films. Surface morphology of the SnO2thin films was observed by atomic force microscopy. The grain size of the SnO2thin films is found to increase with the film thickness and oxidation temperature. Kinetics of the grain growth is discussed in terms of a 3-dimensional diffusion limited process. The diode current-voltage (I-V) characteristic of the SnO2/Si heterojunctions (isotype and anisotype) was measured in the temperature range of 14K-383K. Changes in the diode ideality factor and threshold voltage with temperature are discussed. In addition, we present ambient tunnelling I-V results measured from individual SnO2grains.

Nanostructured TiO2 Thin Film by Sol-Gel Spin Coating with Different Concentration

2015 ◽  
Vol 1109 ◽  
pp. 529-533
Author(s):  
Irma Hidayanti Halim Affendi ◽  
Najwa Ezira Ahmed Azhar ◽  
Puteri Sarah Mohamad Saad ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Spin Coating ◽  
Sol Gel ◽  
Force Microscopy ◽  
Nanostructured Thin Film ◽  
Atomic Force ◽  
Current Voltage

The production of TiO2 nanostructured thin film was synthesized by sol-gel method using TiO2 nanopowder as precursor. The solution of TiO2 was then deposited as thin film onto glass substrate by spin-coating technique. The aim is to investigate the effect of concentrations on the surface morphology and electrical properties of the thin films. The effect on the surface morphology was observed by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM). The electrical properties were then observed by two-point probe method. By measuring the current-voltage (IV) characteristic, resistivity and conductivity can be measured. The purpose of this paper is to investigate the surface morphology and the IV characteristic of the thin films.

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

Observation of the effects of Bi-deficiency on ferroelectric and electrical properties in Bi(1+x)FeO3/La0.65Sr0.35MnO3 heterostructures via atomic force microscopy

RSC Advances ◽  
2016 ◽  
Vol 6 (116) ◽  
pp. 115039-115045 ◽  
Author(s):  
Qing Liu ◽  
Jieling Zhang ◽  
Ling Wei ◽  
Weifeng Zhang
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Atomic Force

Bi(1+x)FeO3 thin films with different Bi contents (x = 0%, 5%, and 10%) were grown on (001) SrTiO3 substrates with La0.65Sr0.35MnO3 (LSMO) buffered layers via pulsed laser deposition.

GaZnO as a Transparent Electrode to Silicon Carbide

2012 ◽  
Vol 717-720 ◽  
pp. 849-852
Author(s):  
Jung Ho Lee ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Hall Effect Measurement ◽  
Transparent Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structural And Electrical Properties ◽  
Substrate Temperature Increase ◽  
Substrate Temperatures

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.

Structures and Electrical Properties of Fullerene Thin Films on Si(111)-7×7 Surface Investigated by Noncontact Atomic Force Microscopy

2000 ◽  
Vol 39 (Part 1, No. 6B) ◽  
pp. 3827-3829 ◽  
Author(s):  
Kei Kobayashi ◽  
Hirofumi Yamada ◽  
Toshihisa Horiuchi ◽  
Kazumi Matsushige
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Force Microscopy ◽  
Atomic Force

Microstructural and Electrical Properties of La Doped Ba1划xSrxTiO3 Thin Films For Tunable Microwave Device Applications

2000 ◽  
Vol 655 ◽  
Author(s):  
M.W. Cole ◽  
P.C. Joshi ◽  
E. Ngo ◽  
C.W. Hubbard ◽  
U. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Insulator Metal ◽  
Device Applications ◽  
Bst Films ◽  
La Doped

AbstractWe have investigated the structural, compositional, interfacial, surface morphological and dielectric properties of Ba0.6Sr0.4TiO3 solid solution thin films La doped from 0 to 10 mol%. The doped thin films were prepared by the metalorganic solution deposition technique using carboxylate-alkoxide precursors. After post-deposition annealing in oxygen ambient at 750 °C the films were characterized via x-ray diffraction, Auger electron microscopy, field emission scanning electron microscopy, and atomic force microscopy. The electrical measurements were achieved in the metal-insulator-metal (MIM) configuration with Pt as the top and bottom electrode. Our results demonstrated that La doping had a strong effect on the films microstructural, dielectric and insulating properties. Specifically, 1 mol% La doped BST films exhibited a lower dielectric constant, 283 and higher resistivity 31.4×1013 W-cm with respect to that of undoped BST. The loss tangent and tunability (at 100 kHz) of the 1 mol% La doped BST films were 0.019 and 21% (at E=300kV/cm) respectively.

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