Study on Graphene Thin Films Grown on Single Crystal Sapphire Substrates Without a Catalytic Metal Using Pulsed Laser Deposition

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

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P-type nitrogen- and phosphorus-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates

10.1117/12.715024 ◽

2007 ◽

Cited By ~ 2

Author(s):

J.-P. Mosnier ◽

S. Chakrabarti ◽

B. Doggett ◽

E. McGlynn ◽

M. O. Henry ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Nitrogen And Phosphorus ◽

Sapphire Substrates ◽

Doped Zno ◽

P Type ◽

Phosphorus Doped

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Terahertz Transmission Properties of VO2 Thin Films Deposited on c-and m-Plane Sapphire Substrates by Pulsed Laser Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.710.25 ◽

2013 ◽

Vol 710 ◽

pp. 25-28 ◽

Cited By ~ 1

Author(s):

Xiao Qiang Kou ◽

Ji Ming Bian ◽

Zhi Kun Zhang

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

Terahertz Time Domain Spectroscopy ◽

Transmission Properties ◽

Sapphire Substrates ◽

Dense Distribution ◽

Terahertz Transmission

Vanadium dioxide (VO2) films were grown on c-and m-plane sapphire substrates by pulsed laser deposition (PLD) technique with VO2ceramic target. The VO2films with preferred growth orientation and uniform dense distribution have been achieved on both substrates, as confirmed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The terahertz (THz) transmission properties of VO2thin films were studied by terahertz time-domain spectroscopy (THz-TDS). The results indicate that the THz transmission properties of VO2films are strongly influenced by the sapphire substrate orientation, suggesting that VO2films are ideal material candidates for THz modulation.

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Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-361-27 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 1

Author(s):

William Jo ◽

T.W. Noh

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Pulsed Laser Deposition ◽

Film Growth ◽

Narrow Range ◽

Pulsed Laser ◽

Growth Behavior ◽

Laser Deposition ◽

Sapphire Substrates ◽

Deposition Parameters

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

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