Variation of the refractive index for the active layer of the double heterostructure laser diode GaAIAsSb/GaInAsSb/GaAIAsSb) in injection mode

2007 ◽  
Vol 2 (2) ◽  
Author(s):  
MA Mohou
Keyword(s):  
Refractive Index ◽  
Active Layer ◽  
Laser Diode ◽  
Double Heterostructure ◽  
Injection Mode ◽  
Heterostructure Laser

First observation of the short-pulsing Q-switching mode in a double-heterostructure laser diode without ion implantation

2002 ◽  
Author(s):  
Sergey N. Vainshtein ◽  
Mikhail I. Sverdlov ◽  
Larisa Shestak ◽  
Vladimir Tretyakov ◽  
Juha T. Kostamovaara
Keyword(s):  
Ion Implantation ◽  
Laser Diode ◽  
Double Heterostructure ◽  
Heterostructure Laser ◽  
Q Switching ◽  
Switching Mode

Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals

2005 ◽  
Vol 44 (10) ◽  
pp. 7244-7249 ◽  
Author(s):  
R. Czernecki ◽  
G. Franssen ◽  
T. Suski ◽  
T. Świetlik ◽  
J. Borysiuk ◽  
...  
Keyword(s):  
Laser Diode ◽  
Double Heterostructure ◽  
Heterostructure Laser ◽  
Bulk Gan

Meniscus lines as nucleation sites for the active layer of a double‐heterostructure laser grown by LPE

1977 ◽  
Vol 30 (1) ◽  
pp. 42-44 ◽  
Author(s):  
M. B. Small ◽  
J. M. Blum ◽  
R. M. Potemski
Keyword(s):  
Active Layer ◽  
Double Heterostructure ◽  
Heterostructure Laser ◽  
Nucleation Sites
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