S-Parameter Comparison of Common Source and Common Gate Low Noise Amplifier

AbstractThis paper presents the design of a single-ended input, differential output low noise amplifier for GPS applications in 0.18 µm CMOS technology. This Low Noise Amplifier (LNA) is composed of a common source (CS) amplifier adopted with a common gate, common source (CGCS) balun load. Instead of spiral on-chip inductor, a differential active inductor circuit (DAI) is used as an active load of balun and also

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Low Noise Amplifier with Improved Gain and Reduced Noise-Figure in 90nm CMOS Technology

International Journal of Advanced Research in Science, Communication and Technology ◽

10.48175/ijarsct-1815 ◽

2021 ◽

pp. 85-94

Author(s):

Dr. Rashmi S B ◽

Mr. Raghavendra B ◽

Mr. Sanketh V

Keyword(s):

Reflection Coefficient ◽

Noise Figure ◽

Cmos Technology ◽

Low Noise ◽

Low Noise Amplifier ◽

Ultra Wideband ◽

Common Source ◽

Frequency Range ◽

Common Gate ◽

Noise Amplifier

A CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless applications is presented in this paper. The proposed CMOS low noise amplifier (LNA) is designed using common-gate (CG) topology as the first stage to achieve ultra-wideband input matching. The common-gate (CG) is cascaded with common- source (CS) topology with current-reused configuration to enhance the gain and noise figure (NF) performance of the LNA with low power. The Buffer stage is used as output matching network to improve the reflection coefficient. The proposed low noise amplifier (LNA) is implemented using CADENCE Virtuoso Analog and Digital Design Environment tool in 90nm CMOS technology. The LNA provides a forward voltage gain or power gain (S21) of 32.34dB , a minimum noise figure of 2dB, a reverse-isolation (S12) of less than - 38.74dB and an output reflection coefficient (S22) of less than -7.4dB for the entire ultra-wideband frequency range. The proposed LNA has an input reflection coefficient (S11) of less than -10dB for the ultra-wideband frequency range. It achieves input referred 1-dB compression point of 78.53dBm and input referred 3-dB compression point of 13dBm. It consumes only 24.226mW of power from a Vdd supply of 0.7V.

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Analysis and design of common-gate low-noise amplifier for wideband applications

International Journal of Circuit Theory and Applications ◽

10.1002/cta.543 ◽

2009 ◽

Vol 37 (2) ◽

pp. 257-281 ◽

Cited By ~ 6

Author(s):

Jouni Kaukovuori ◽

Mikko Kaltiokallio ◽

Jussi Ryynänen

Keyword(s):

Low Noise ◽

Low Noise Amplifier ◽

Analysis And Design ◽

Common Gate ◽

Noise Amplifier

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A 2.4 GHz low noise amplifier design at 130nm CMOS technology using common gate topology for WiFi / WiMAX application

International Journal of Engineering & Technology ◽

10.14419/ijet.v7i1.3.9270 ◽

2017 ◽

Vol 7 (1.3) ◽

pp. 69

Author(s):

M. Ramana Reddy ◽

N.S Murthy Sharma ◽

P. Chandra Sekhar

Keyword(s):

Noise Figure ◽

Cmos Technology ◽

Low Noise ◽

Low Noise Amplifier ◽

Low Power Consumption ◽

Common Gate ◽

Chip Size ◽

Overall Performance ◽

Amplifier Design ◽

Noise Amplifier

The proposed work shows an innovative designing in TSMC 130nm CMOS technology. A 2.4 GHz common gate topology low noise amplifier (LNA) using an active inductor to attain the low power consumption and to get the small chip size in layout design. By using this Common gate topology achieves the noise figure of 4dB, Forward gain (S21) parameter of 14.7dB, and the small chip size of 0.26 mm, while 0.8mW power consuming from a 1.1V in 130nm CMOS gives the better noise figure and improved the overall performance.

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