The process of preparation of tellurium epitaxial films and layers with high structural perfection during vapor-deposition process in the pure hydrogen environment

The work is devoted to studying a new methodology for epitaxial films preparation on the mi-ca (muscovite) plates and based on carrying out the tellurium vapor-deposition process in the pure hydrogen environment. The formation of Н2Te molecules during reaction of H2 with sol-id Te in the hot zone, diffusion of Н2Te towards the cold surface with efficient thermalization due to high thermal conductivity of H2, Н2Te dissociative adsorption on the growth surface followed by H2 desorption and atomic Te accumulation are considered as key steps of crystal-line epitaxial films formation. Atomic Te assists the appearance and growth of directional liquid nucleuses at cold plate temperatures near Te melting point (about 450C). During coa-lescence of these liquid nucleuses the gradual formation of a liquid film is observed with a mosaic of voids of various size. After continuous liquid sheet formation, auto-epitaxial film growth begins also taking place according to vapor-liquid-crystal process described. The structural perfection of films formed is closed to three-dimensional monocrystalline samples. As a result, Te films with such characteristics may be put to use in various branches of micro-, opto-, acoustoelectronics.