Ultra-weak emission and microcurrents instabilities in blue GaN LEDs at different stages of degradation
It is found that the ultra-weak luminescence observed in microcurrents mode in blue GaN LEDs with multiple quantum wells is due to tunnel-recombination processes with the participation of defect states and local potential wells of various depths, which arise as a result of planar fluctuations of indium in the InGaN layers of the active region. Digital photographs were obtained and patterns of ultra-weak luminescence of the surface of LED crystals were analyzed. It is shown that the patterns of luminescence, along with the current-voltage characteristic, demonstrate significant changes after testing even at the initial stages of degradation, which indicates a high sensitivity of these parameters to degradation processes and the possibility of their use in diagnostic and non-destructive testing methods.