Influence of oxygen partial pressure and annealing temperature on the physical properties of nanostructured ZnO thin films prepared by RF magnetron sputtering

R. Subba Reddy

doi:10.5185/amp.2018/1416

Influence of oxygen partial pressure and annealing temperature on the physical properties of nanostructured ZnO thin films prepared by RF magnetron sputtering

Advanced Materials Proceedings ◽

10.5185/amp.2018/1416 ◽

2018 ◽

Vol 3 (9) ◽

pp. 570-576

Author(s):

R. Subba Reddy

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Physical Properties ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Annealing Temperature ◽

Rf Magnetron Sputtering ◽

Zno Thin Films

Oxygen Partial Pressure Influenced Structural, Morphological and Optical Properties of Nanocrystalline ZnO Thin Films Formed by RF Magnetron Sputtering

10.1063/1.3643612 ◽

2011 ◽

Cited By ~ 1

Author(s):

R. Subba Reddy ◽

A. Sreedhar ◽

M. Hariprasad Reddy ◽

P. Kondaiah ◽

S. Uthanna ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Rf Magnetron Sputtering ◽

Zno Thin Films

The effect of oxygen partial pressure on physical properties of nano-crystalline silver oxide thin films deposited by RF magnetron sputtering

Crystal Research and Technology ◽

10.1002/crat.201100206 ◽

2011 ◽

pp. n/a-n/a ◽

Cited By ~ 3

Author(s):

P. Narayana Reddy ◽

A. Sreedhar ◽

M. Hari Prasad Reddy ◽

S. Uthanna ◽

J. F. Pierson

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Physical Properties ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Silver Oxide ◽

Rf Magnetron Sputtering ◽

Oxide Thin Films ◽

Nano Crystalline ◽

Effect Of Oxygen

Dependence of the Dielectric Properties of Pt/ZrO2/Si Capacitors Prepared by RF-Magnetron Sputtering on the Oxygen Partial Pressure and the Annealing Temperature

Materials Science Forum - Eco-Materials Processing and Design VIII ◽

10.4028/0-87849-431-6.937 ◽

2007 ◽

pp. 937-940

Author(s):

Chong Mu Lee ◽

Anna Park ◽

Su Young Park ◽

Min Woo Park

Keyword(s):

Dielectric Properties ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Annealing Temperature ◽

Rf Magnetron Sputtering

Some physical properties of nanostructured Al doped ZnO thin films synthesized by RF magnetron sputtering at room temperature

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-019-01329-6 ◽

2019 ◽

Vol 30 (10) ◽

pp. 9910-9915

Author(s):

Volkan Şenay

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Physical Properties ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Doped Zno

Ultra smooth NiO thin films on flexible plastic (PET) substrate at room temperature by RF magnetron sputtering and effect of oxygen partial pressure on their properties

Applied Surface Science ◽

10.1016/j.apsusc.2009.11.088 ◽

2010 ◽

Vol 256 (10) ◽

pp. 3142-3147 ◽

Cited By ~ 19

Author(s):

S. Nandy ◽

S. Goswami ◽

K.K. Chattopadhyay

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Effect Of Oxygen ◽

Pet Substrate

Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films

Thin Solid Films ◽

10.1016/j.tsf.2004.06.159 ◽

2005 ◽

Vol 473 (1) ◽

pp. 58-62 ◽

Cited By ~ 110

Author(s):

Ruijin Hong ◽

Hongji Qi ◽

Jianbing Huang ◽

Hongbo He ◽

Zhengxiu Fan ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Direct Current ◽

Reactive Magnetron Sputtering ◽

Zno Thin Films ◽

Reactive Magnetron

Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering

Solid State Communications ◽

10.1016/j.ssc.2010.07.032 ◽

2010 ◽

Vol 150 (39-40) ◽

pp. 1919-1922 ◽

Cited By ~ 40

Author(s):

Zhenguo Ji ◽

Qinan Mao ◽

Weiqing Ke

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Resistive Switching ◽

Reactive Magnetron Sputtering ◽

Zno Thin Films ◽

Reactive Magnetron ◽

Dc Reactive Magnetron Sputtering ◽

Switching Characteristics

Orientation control of LaNiO3 thin films by RF magnetron sputtering with different oxygen partial pressure

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2009.05.025 ◽

2009 ◽

Vol 311 (17) ◽

pp. 4241-4246 ◽

Cited By ~ 19

Author(s):

Lihui Yang ◽

Genshui Wang ◽

Chaoliang Mao ◽

Yuanyuan Zhang ◽

Ruihong Liang ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Rf Magnetron Sputtering ◽

Orientation Control

The studies of RT electrical resistivities of LaNiO3-δthin films by RF magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

10.1117/12.607751 ◽

2004 ◽

Author(s):

X. D. Zhang ◽

Xiang J. Meng ◽

Jing L. Sun ◽

Gen S. Wang ◽

Tie Lin ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Rf Magnetron Sputtering ◽

Electrical Resistivities ◽

Substrate Temperatures

Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2020.105016 ◽

2020 ◽

Vol 112 ◽

pp. 105016 ◽

Cited By ~ 2

Author(s):

Guoxi Zheng ◽

Jianmin Song ◽

Jie Zhang ◽

Junjie Li ◽

Bing Han ◽

...

Keyword(s):

Thin Films ◽

Solar Cells ◽

Magnetron Sputtering ◽

Physical Properties ◽

Perovskite Solar Cells ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Doped Zno ◽

Co Doped