Nanoscale compositional segregation in complex In-bearing sulfides: Results from atom probe tomography and transmission kikuchi diffraction

Author(s):  
Joachim Krause ◽  
Steven M. Reddy ◽  
William D. A. Rickard ◽  
David W. Saxey ◽  
Denis Fougerouse ◽  
...  

<p>Indium-bearing sphalerites from the Hämmerlein skarn deposit, located in the western Erzgebirge (Germany), show complex distribution patterns of major and minor elements on a micrometer to sub-micrometer scale. However, with the spatial resolution of traditional analytical methods, such as SEM-based image analysis and field emission electron probe microanalysis (FE-EPMA), many features in these spalerites cannot be resolved. It remains unclear whether Cu, In and Fe are in solid solution in the sphalerite, are concentrated in nanoparticles or form discrete phases.</p><p>Atom probe tomography combined with transmission kikuchi diffraction has been used to resolve both the compositional heterogeneity and the nanostructure of these complex In-Cu-Fe-sphalerites. The obtained data indicate a complex structure with micro- to nanometer sized, plate-shaped inclusions of chalcopyrite in the sphalerite. In addition, a nanometer scale In-Cu-sulfide phase forms plate-like segregations in the sphalerite. All types of segregations have similar crystal structure and record the same crystal orientation indicating that they likely formed by exsolution.</p><p>The results indicate that complex sulfides containing cations of more than one element as minor or major constituents may represent discrete, exsolved phases, rather than solid solutions or being concentrated in nanoparticles. This heterogeneous nature will affect the nanoscale properties of the sphalerite, which may have implications for the economic extraction of precious elements such as In, when processing these minerals for beneficiation. Furthermore these nanoscale properties will open up new perspectives on formation processes of In-Cu-Fe-sphalerites, which might be relevant for other chemically complex minerals as well.</p><p> </p>

2015 ◽  
Vol 60 ◽  
pp. 60-65 ◽  
Author(s):  
R. Schirhagl ◽  
N. Raatz ◽  
J. Meijer ◽  
M. Markham ◽  
S.S.A. Gerstl ◽  
...  

2017 ◽  
Vol 121 (22) ◽  
pp. 225701 ◽  
Author(s):  
Bastien Bonef ◽  
Richard Cramer ◽  
James S. Speck

2016 ◽  
Vol 22 (S3) ◽  
pp. 702-703 ◽  
Author(s):  
D. Isheim ◽  
J. Coakley ◽  
A. Radecka ◽  
D. Dye ◽  
T.J. Prosa ◽  
...  

2016 ◽  
Vol 11 (1) ◽  
Author(s):  
Bastien Bonef ◽  
Miguel Lopez-Haro ◽  
Lynda Amichi ◽  
Mark Beeler ◽  
Adeline Grenier ◽  
...  

2019 ◽  
Vol 31 (7) ◽  
pp. 2241-2247 ◽  
Author(s):  
Andrew P. Proudian ◽  
Matthew B. Jaskot ◽  
David R. Diercks ◽  
Brian P. Gorman ◽  
Jeramy D. Zimmerman

2019 ◽  
Vol 26 (1) ◽  
pp. 36-45 ◽  
Author(s):  
Rong Hu ◽  
Jing Xue ◽  
Xingping Wu ◽  
Yanbo Zhang ◽  
Huilong Zhu ◽  
...  

AbstractAtom probe tomography (APT) has emerged as an important tool in characterizing three-dimensional semiconductor devices. However, the complex structure and hybrid nature of a semiconductor device can pose serious challenges to the accurate measurement of dopants. In particular, local magnification and trajectory aberration observed when analyzing hybrid materials with different evaporation fields can cause severe distortions in reconstructed geometry and uncertainty in local chemistry measurement. To address these challenges, this study systematically investigates the effect of APT sampling directions on the measurement of n-type dopants P and As in an Si fin field-effect transistor (FinFET). We demonstrate that the APT samples made with their Z-axis perpendicular to the center axis of the fin are effective to minimize the negative effects that result from evaporation field differences between the Si fin and SiO2 on reconstruction and achieve improved measurement of dopant distributions. In addition, new insights have been gained regarding the distribution of ion-implanted P and As in the Si FinFET.


2011 ◽  
Vol 309-310 ◽  
pp. 161-166 ◽  
Author(s):  
C. Perrin ◽  
K. Hoummada ◽  
I. Blum ◽  
A. Portavoce ◽  
M. Descoins ◽  
...  

The unique capabilities of atom probe tomography (APT) to characterize internal interfaces and layer chemistry with sub-nanometer scale resolution in three dimensions have been recently opened up to materials with poor electrical conductivity by the use of ultrafast laser pulses. The progress in sample preparation (focused ion beam) as well as in instrument performance enable now the analysis of relatively large volumes with typical diameters of 100 to 200 nm and depths of several hundred nm (this corresponds to an increase by several order of magnitude compared to the former instrument) of site specific samples. In this work, APT is used to study the effects of Pt on the formation and stability of Ni silicides. The precise location of this alloy element has been determined at the nanometer scale: In particular, APT allows us to quantify the amount of Pt in the grain boundaries (GB) of Ni2Si for about 100 different grain boundaries and thus to better characterize the GB diffusion and segregation.


2013 ◽  
Vol 19 (S2) ◽  
pp. 984-985 ◽  
Author(s):  
F. Vurpillot ◽  
A. Gaillard ◽  
L. Arnoldi ◽  
A. Vella ◽  
L. Rigutti ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.


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