scholarly journals Photoresponse characteristics from vacuum deposited thin film of copper phthalocyanine: dependence on grain size

2021 ◽  
Vol 1 (1) ◽  
Author(s):  
Arka Mandal ◽  
◽  
Biswanath Mukherjee
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Substrate Temperature ◽  
Copper Phthalocyanine ◽  
High Vacuum ◽  
Single Layer ◽  
Optical Power ◽  
Force Microscopy ◽  
Cupc Film ◽  
Layer Thin Film

An organic photodetector (PD) is fabricated with single layer thin film of copper phthalocyanine (CuPc) on glass substrate. The thermal deposition of CuPc film on the substrate was realized under high vacuum and at different substrate temperature (room temperature, 40 ◦C, 70 ◦C, 100 ◦C). The comparison of photoresponse characteristics of CuPc thin film deposited under different conditions showed good improvement with increase in the substrate temperature, and the best performances being observed for the film deposited at substrate temperature of 100 ◦C. The thin film of CuPc characterized through X-ray diffraction (XRD) spectroscopy and atomic force microscopy (AFM) clearly indicated that with increase in substrate temperature, the grain size of CuPc film increased, which improved the crystallinity and hence the photoconductivity of the device. The CuPc thin film based PD displayed stable and reproducible photoswitching characteristics under white light irradiation, with photocurrent modulation by varying in input optical power. The highest photo to dark current ratio and responsitivity of the devices was calculated to be, ca. 6.5 and 7.1 mA-W−1 at low optical power, ca. 14.5 mW-cm−2.

The density of states in thin film copper phthalocyanine measured by Kelvin probe force microscopy

2008 ◽  
Vol 93 (8) ◽  
pp. 083308 ◽  
Author(s):  
K. Celebi ◽  
P. J. Jadhav ◽  
K. M. Milaninia ◽  
M. Bora ◽  
M. A. Baldo
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Copper Phthalocyanine ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy

A new method to characterize the TBC's thermal barrier effect using single-layer thin film thermocouples

2020 ◽  
Author(s):  
Zhonglin Ji ◽  
Franklin L. Duan ◽  
Haotian Weng ◽  
Ziyi Xie ◽  
Baowen Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Layer ◽  
New Method ◽  
Thermal Barrier ◽  
Barrier Effect ◽  
Thin Film Thermocouples ◽  
Layer Thin Film

Investigation on Optical Properties of Transparent ITO Thin Films

2011 ◽  
Vol 347-353 ◽  
pp. 3481-3484
Author(s):  
Xue Hua Li ◽  
Dong Sheng Wang ◽  
Jian Zhou Du
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Glass Substrate ◽  
Film Theory ◽  
Single Layer ◽  
Minimum Value ◽  
Ito Thin Films ◽  
Layer Thin Film

Based on the single-layer thin film theory, we calculated transmittance of ITO thin film. The reflectivity arrive a maximum or a minimum according to whether the refractive index of film is greater or smaller than the refractive index of the glass substrate. we obtain the same maximum of transparence which is above 95% and the minimum value which decrease to 76.5% with the increase of refractive index.

Impedance Change Ratio and Sensitivity of Micromachined Single-Layer Thin Film Magneto-Impedance Sensor

2019 ◽  
Vol 10 ◽  
pp. 1-5 ◽  
Author(s):  
Hiroaki Kikuchi ◽  
Taisei Umezaki ◽  
Takuya Shima ◽  
Chihiro Sumida ◽  
Suguru Oe
Keyword(s):  
Thin Film ◽  
Single Layer ◽  
Impedance Change ◽  
Layer Thin Film ◽  
Impedance Sensor

Multi-layer thin-film deposition for high-performance X-ray field-emission characteristics

2021 ◽  
pp. 2140043
Author(s):  
Tae Hwan Jang ◽  
Tae Gyu Kim ◽  
Mun Ki Bae ◽  
Kyuseok Kim ◽  
Jaegu Choi
Keyword(s):  
Thin Film ◽  
Field Emission ◽  
High Performance ◽  
Low Voltage ◽  
High Vacuum ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Emission Effect ◽  
Layer Thin Film

In this study, we developed a nanoscale emitter having a multi-layer thin-film nanostructure in an effort to maximize the field-emission effect with a low voltage difference. The emitter was a sapphire board on which tungsten–DLC multi-player thin film was deposited using PVD and CVD processes. This multi-layer thin-film emitter was examined in a high-vacuum X-ray tube system. Its field-emission efficiency according to the applied voltage was then analyzed.

scholarly journals Conversion of YBCO Pellet into Single Layer Thin Film using Pulse Laser Deposition

2018 ◽  
Vol 1082 ◽  
pp. 012024
Author(s):  
Fasih Ud Din ◽  
Abdul Halim Shaari ◽  
Chen Soo Kien ◽  
Zainal Abidin Talib ◽  
Amad Ud Din ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulse Laser Deposition ◽  
Pulse Laser ◽  
Single Layer ◽  
Laser Deposition ◽  
Layer Thin Film

Preparations and Photovoltaic Properties of Thin Films Using Soluble Fulleropyrrolidine Derivatives for Organic Solar Cells

Solar Energy ◽  
2006 ◽  
Author(s):  
Mi-Ra Kim ◽  
Won Suk Shin ◽  
Sung-Ho Jin ◽  
Kastuhiko Fujida ◽  
Testuo Tsutsui ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Fill Factor ◽  
Single Layer ◽  
Photovoltaic Properties ◽  
Coating Method ◽  
Layer Thin Film ◽  
Chain Lengths

Organic solar cells made from bi-layer thin-film heterojunctions having poly((2-methoxy-5-(2′-ethylhexyloxy)-p-phenylene)vinylene) (MEH-PPV) as an electron donor and fulleropyrrolidine derivatives as an electron acceptor were investigated. We synthesized soluble fulleropyrrolidine derivatives substituted different chain lengths for the organic solar cell. Due to the high solubility and sufficiently long chain length of fulleropyrrolidine derivatives, though those are monomers, a thin film (about 50 nm) could be fabricated individually by the spin-coating method. The fill factor of the bi-layer device was achieved to be 0.40, which is higher than that of the single-layer device by a polymer/fulleropyrrolidine derivative blend film of 0.29, due to the decrease of the recombination.

Microstructure and Electrical Characteristics of ITO/CuPc/TCNQ/Al and ITO/TCNQ/CuPc/Al Heterojunctions

2011 ◽  
Vol 403-408 ◽  
pp. 5097-5101 ◽  
Author(s):  
Theerasak Juagwon ◽  
Tanakorn Osotchan
Keyword(s):  
Grain Size ◽  
Electrical Characteristic ◽  
Copper Phthalocyanine ◽  
Semiconductor Layer ◽  
Organic Layer ◽  
Measured Temperature ◽  
Electrical Characteristics ◽  
Thermal Evaporation Method ◽  
Alternative Structures ◽  
Cupc Film

Microstructure of heterojunction usually has strong influence on its electrical characteristic. In order to study the effect of microstructure, the layers of copper phthalocyanine (CuPc) and tetracyanoquinodimethane (TCNQ) are deposited on indium tin oxide (ITO) coated glass substrate by thermal evaporation method. The modification of microstructure in the organic semiconductor layer with varied underneath layer is studied in the heterojunction between CuPc and TCNQ. Then the effect on its electrical characteristic is examined between ITO and aluminum (Al) electrodes in these alternative structures. By determining the microstructure by atomic force microscope (AFM), the CuPc and TCNQ thin films provide very tiny and large grain, respectively. These large grains in TCNQ thin film connect into line pattern probably due to the slow grain growth. Therefore the CuPc film is deposited on this TCNQ layer, the larger gain size of CuPc film can be achieved. However, the TCNQ layer grown on top of tiny grain of CuPc exhibits relatively small grain size. The variation of X-ray diffraction (XRD) peaks of these alternative structures support the microstructure extracted from AFM image very well. The optical absorption of these various structures exhibits the combination of absorption peaks from each layer. The electrical characteristics of these structures strongly depend on junction between ITO electrode and organic layer. The heterojunction structures of ITO/CuPc/Al and ITO/CuPc/TCNQ/Al show rectifier characteristics while the structures of ITO/TCNQ/Al and ITO/TCNQ/CuPc/Al exhibit similar IV characteristic for both polarities. However the effect of larger grain size in TCNQ layer leads to very much higher current than those other structures. By measuring current down to temperature of 50 K, it is found that the structures with rectifier junction indicate the current decreasing more than five orders of magnitude while the junctions with no rectifier characteristic exhibit only slightly current change even the measured temperature is reduced to very low temperature.

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