scholarly journals Effects of Ni Concentration on Residual Stress in Electrodeposited Ni Thin Film for 63Ni Sealed Source

2017 ◽  
Vol 50 (1) ◽  
pp. 29-34
Author(s):  
Pilgeun Yoon ◽  
Deok-Yong Park
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Sealed Source

Measurements of Residual Stress in the Layers of Thin Film Micro-Gas Sensors

2000 ◽  
Vol 657 ◽  
Author(s):  
Youngman Kim ◽  
Sung-Ho Choo
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Micro Gas Sensor ◽  
Thin Film Layer ◽  
Film Layer ◽  
The Difference ◽  
Stress States

ABSTRACTThe mechanical properties of thin film materials are known to be different from those of bulk materials, which are generally overlooked in practice. The difference in mechanical properties can be misleading in the estimation of residual stress states in micro-gas sensors with multi-layer structures during manufacturing and in service.In this study the residual stress of each film layer in a micro-gas sensor was measured according to the five difference sets of film stacking structure used for the sensor. The Pt thin film layer was found to have the highest tensile residual stress, which may affect the reliability of the micro-gas sensor. For the Pt layer the changes in residual stress were measured as a function of processing variables and thermal cycling.

scholarly journals X-ray nanodiffraction analysis of stress oscillations in a W thin film on through-silicon via

2016 ◽  
Vol 49 (1) ◽  
pp. 182-187 ◽  
Author(s):  
J. Todt ◽  
H. Hammer ◽  
B. Sartory ◽  
M. Burghammer ◽  
J. Kraft ◽  
...  
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Finite Element ◽  
Diffraction Data ◽  
Element Model ◽  
Stress Distributions ◽  
Through Silicon Via ◽  
X Ray ◽  
Tangential Stresses ◽  
Stress Components

Synchrotron X-ray nanodiffraction is used to analyse residual stress distributions in a 200 nm-thick W film deposited on the scalloped inner wall of a through-silicon via. The diffraction data are evaluated using a novel dedicated methodology which allows the quantification of axial and tangential stress components under the condition that radial stresses are negligible. The results reveal oscillatory axial stresses in the range of ∼445–885 MPa, with a distribution that correlates well with the scallop wavelength and morphology, as well as nearly constant tangential stresses of ∼800 MPa. The discrepancy with larger stress values obtained from a finite-element model, as well as from a blanket W film, is attributed to the morphology and microstructural nature of the W film in the via.

Influence of residual stress on performance of AlN thin film based piezoelectric MEMS accelerometer structure

2019 ◽  
Vol 25 (10) ◽  
pp. 3959-3967 ◽  
Author(s):  
Nidhi Gupta ◽  
Akhilesh Pandey ◽  
Siva Rama Krishna Vanjari ◽  
Shankar Dutta
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Mems Accelerometer ◽  
Piezoelectric Mems

scholarly journals Estimation of Residual Stress and Strength in Fiber-Textured TiN Hard Thin Film

2009 ◽  
Vol 58 (7) ◽  
pp. 581-587 ◽  
Author(s):  
Yoshiaki AKINIWA ◽  
Takuya WATANABE ◽  
Hidehiko KIMURA
Keyword(s):  
Thin Film ◽  
Residual Stress

scholarly journals The Effect of Stress on the Nanomechanical Properties of Au Surfaces

1996 ◽  
Vol 440 ◽  
Author(s):  
J. E. Houston
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Local Level ◽  
Maximum Shear Stress ◽  
Critical Role ◽  
Film Stress ◽  
Indentation Modulus ◽  
Nanomechanical Properties ◽  
Average Grain Size ◽  
Film Substrate

AbstractStress in thin films plays a critical role in many technologically important areas. The role is a beneficial one in strained layer superlattices where semiconductor electrical and optical properties can be tailored with film stress. On the negative side, residual stress in thin-film interconnects in microelectronics can lead to cracking and delamination. In spite of their importance, however, surface and thin-film stresses are difficult to measure and control, especially on a local level. In recent studies, we used the Interfacial Force Microscope (IFM) in a nanoindenter mode to survey the nanomechanical properties of Au films grown on various substrates. Quantitative tabulations of the indentation modulus and the maximum shear stress at the plastic threshold showed consistent values over individual samples but a wide variation from substrate to substrate. These values were compared with film properties such as surface roughness, average grain size and interfacial adhesion and no correlation was found. However, in a subsequent analysis of the results, we found consistencies which support the integrity of the data and point to the fact that the results are sensitive to some property of the various film/substrate combinations. In recent measurements on two of the original substrate materials we found a direct correlation between the nanomechanical values and the residual stress in the films, as measured globally by a wafer warping technique. In the present paper, we review these earlier results and show recent measurements dealing with stresses externally applied to the films which supports our earlier conclusion concerning the role of stress on our measurements. In addition, we present very recent results concerning morphological effects on nanomechanical properties which add additional support to the suggestion that near-threshold indentation holds promise of being able to measure stress on a very local level

Residual Stresses for In-Situ Deposition of Thin-Film High-Temperature Superconductors

1994 ◽  
Vol 116 (4) ◽  
pp. 249-257 ◽  
Author(s):  
P. E. Phelan ◽  
M. N. Ghasemi Nejhad
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Residual Stresses ◽  
High Temperature Superconductors ◽  
Oxygen Stoichiometry ◽  
Chemical Shrinkage ◽  
In Situ Deposition ◽  
Cell Dimensions ◽  
Unit Cell Dimensions

Residual stresses are caused by nonuniform thermal expansion and chemical shrinkage taking place during processing. For thin-film high-temperature superconductors, residual stresses result because of the thermal expansion mismatch between the film and substrate, and the introduction of oxygen into the film after in-situ deposition, which makes the unit cell dimensions change (chemical shrinkage) as the oxygen stoichiometry changes. Since both the reliability of the film—especially the bond between the film and substrate—and the film critical temperature are functions of the state of stress, it is important to understand how the residual stresses vary with processing conditions. Here, a three-dimensional residual stress analysis is carried out based on laminate theory, which assumes the lateral dimensions of the entire system to be much larger than its thickness. The normal residual stress components in the film, and the peeling stress at the film/substrate interface, are calculated. The results demonstrate the crucial role that chemical shrinkage plays in the formulation of residual stresses. A large portion of the stresses arises from the initial change of the unit cell dimensions due to changes in the film oxygen stoichiometry. Therefore, the processing temperature, and especially the initial oxygen pressure in the deposition chamber, are the key variables that impact the residual stresses.

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