scholarly journals Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

2013 ◽  
Vol 19 (1) ◽  
Author(s):  
Šarūnas MEŠKINIS ◽  
Mindaugas PUCĖTA ◽  
Kęstutis ŠLAPIKAS ◽  
Sigitas TAMULEVIČIUS ◽  
Angelė GUDONYTĖ ◽  
...  
1993 ◽  
Vol 297 ◽  
Author(s):  
J. Hajto ◽  
A.J. Snell ◽  
M.J. Rose ◽  
A.E. Owen ◽  
I.S. Osborne ◽  
...  

We present experimental results showing that Cr/p+/V amorphous silicon memory structures at room temperature exhibit step-like current-voltage characteristics associated with discrete, non-random resistance values. The resistance values observed are ∼26kΩ/i where i is an integer or half integer. The low bias current-voltage characteristics prior to the first step suggest that conduction in this regime is governed by tunneling across a region having very small dimensions, of the order of ∼5-7 Å, and having a diameter ∼30-50 Å.


2000 ◽  
Vol 660 ◽  
Author(s):  
Serkan Zorba ◽  
Neil J. Watkins ◽  
Li Yan ◽  
Yongli Gao

ABSTRACTCurrent-voltage characteristics of organic semiconductor pentacene were studied as a function of applied tip force using conducting probe atomic force microscope. I-V measurements were performed on 150Å and 300Å pentacene films. No electrical contact was observed until 20 nN of tip force for the 150Å film coverage, whereas electrical contact was established easily with a few nN of tip force values for the 300Å film coverage. On both films, once an electrical contact was obtained, the conductance was observed to increase with increasing load. At about 50 nN and higher loads we lost electrical contact in both cases in a reproducible manner. While I-V on 150Å pentacene film showed a rectifying behavior, I-V on 300Å pentacene looked like typical I-V curves of tunneling phenomenon. From these measurements, we have estimated a hole injection barrier of about 0.76 eV and a band gap of about 2.00 eV for pentacene. These results are in agreement with those in the literature.


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