scholarly journals Single-Atom Field-Effect Transistor

2019 ◽  
Author(s):  
Er\'el Granot
2022 ◽  
Vol 2152 (1) ◽  
pp. 012033
Author(s):  
Guida Lin

Abstract The ballistic transport of electrons and unique structural characteristics of graphene and carbon nanotubes enable them to play an important role in nano electronical appliances. Nanodevices based on carbon nano materials can further reduce device size without affecting performance. Here, this paper analyzes Fin Field-effect transistor (FinFET) and Tunnel Field-effect transistor (TFET) based on graphene nanoribbon (GNR) and carbon nanotube which could be used for reducing power consumption. Then it summarizes the applications of graphene in micro/nano sensors based on the electrical, mechanical, optical, and thermal properties of graphene. Graphene’s single-atom thickness and charge storage mechanism provide itself with great potential in the field of resistive memory. Graphene is also widely used in flexible electronic devices.


2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  

1971 ◽  
Vol 7 (22) ◽  
pp. 661 ◽  
Author(s):  
J.A. Turner ◽  
A.J. Waller ◽  
E. Kelly ◽  
D. Parker

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