Carbon-Based Micro/Nano Devices for Transistors, Sensors, and Memories

Abstract The ballistic transport of electrons and unique structural characteristics of graphene and carbon nanotubes enable them to play an important role in nano electronical appliances. Nanodevices based on carbon nano materials can further reduce device size without affecting performance. Here, this paper analyzes Fin Field-effect transistor (FinFET) and Tunnel Field-effect transistor (TFET) based on graphene nanoribbon (GNR) and carbon nanotube which could be used for reducing power consumption. Then it summarizes the applications of graphene in micro/nano sensors based on the electrical, mechanical, optical, and thermal properties of graphene. Graphene’s single-atom thickness and charge storage mechanism provide itself with great potential in the field of resistive memory. Graphene is also widely used in flexible electronic devices.

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Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor

Journal of Computational Electronics ◽

10.1007/s10825-011-0350-2 ◽

2011 ◽

Vol 10 (1-2) ◽

pp. 216-221 ◽

Cited By ~ 14

Author(s):

Dries Sels ◽

Bart Sorée ◽

Guido Groeseneken

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Ballistic Transport ◽

Effect Transistor ◽

Quantum Ballistic Transport

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Evidence for ballistic transport of two‐dimensional electron gas at liquid‐nitrogen temperatures in a silicon metal–oxide semiconductor field effect transistor with a neck in the middle

Applied Physics Letters ◽

10.1063/1.113364 ◽

1995 ◽

Vol 66 (14) ◽

pp. 1776-1778 ◽

Cited By ~ 7

Author(s):

Kan Takeuchi ◽

Dai Hisamoto ◽

Hisaomi Yamashita

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Ballistic Transport ◽

Electron Gas ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Effect Transistor ◽

Dimensional Electron Gas

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Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Nanomaterials ◽

10.3390/nano11020309 ◽

2021 ◽

Vol 11 (2) ◽

pp. 309

Author(s):

Jie Gu ◽

Qingzhu Zhang ◽

Zhenhua Wu ◽

Jiaxin Yao ◽

Zhaohao Zhang ◽

...

Keyword(s):

Quantum Interference ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Ballistic Transport ◽

Oxide Semiconductor ◽

Body Effect ◽

Gate Control ◽

Effect Transistor ◽

P Type

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.

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Near-ballistic transport and current–voltage characteristics of a GaAs/AlGaAs heterojunction field effect transistor under the influence of impurity scattering

Journal of Applied Physics ◽

10.1063/1.366387 ◽

1997 ◽

Vol 82 (10) ◽

pp. 5227-5230 ◽

Cited By ~ 1

Author(s):

Y. Fu ◽

M. Willander

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Ballistic Transport ◽

Impurity Scattering ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Effect Transistor

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Device performance of silicene nanoribbon field-effect transistor under ballistic transport

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166895 ◽

2020 ◽

Author(s):

Mu Wen Chuan ◽

Kien Liong Wong ◽

Afiq Hamzah ◽

Shahrizal Rusli ◽

Nurul Ezaila Alias ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Ballistic Transport ◽

Device Performance ◽

Effect Transistor

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Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2264094 ◽

2013 ◽

Vol 60 (7) ◽

pp. 2410-2414 ◽

Cited By ~ 8

Author(s):

Guangxi Hu ◽

Shuyan Hu ◽

Ran Liu ◽

Lingli Wang ◽

Xing Zhou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Transport Model ◽

Ballistic Transport ◽

Graphene Field Effect Transistor ◽

Effect Transistor

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Analytical Modeling of Current–Voltage Characteristics of Phosphorene Based Field Effect Transistor

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2377 ◽

2018 ◽

Vol 13 (10) ◽

pp. 1478-1481

Author(s):

Shiva Zangi ◽

Mohammad Taghi Ahmadi ◽

Razali Ismail

Keyword(s):

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Current Model ◽

Current Voltage Characteristic ◽

Current Voltage ◽

Nano Sensors ◽

Current Voltage Characteristics ◽

Effect Transistor ◽

Good Agreement

Phosphorene, a new two-dimensional semiconductor, with its outstanding electro-optical and transport features has been studied extremely in recent years. However, the modeling of its interesting properties needs to be explored in more details. In this paper, an analytical model for conductance variations in the proposed phosphorene based field effect transistor is presented based on phosphorene energy dispersion relation and a tunable behaviour due to the alteration of gate voltage is reported. Moreover, the current–voltage characteristic of the phosphorene based nano device has been analyzed theoretically and an acceptable ION/IOFF ratio about 105 is calculated for different bias values. In addition, data from the suggested current model is compared with the extracted experimental data which shows good agreement and confirms the validity of the suggested model in a desirable manner. Hence, it should be noted that the outcome of this paper can be extremely useful in the analysis of phosphorene based nano devices especially nano-sensors.

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