scholarly journals Nanostructured Silicon Sensors

Author(s):  
Huseyn M. Mamedov
Universe ◽  
2019 ◽  
Vol 5 (4) ◽  
pp. 91
Author(s):  
Valentina Raskina ◽  
Filip Křížek

The ALICE (A Large Ion Collider Experiment) experiment at CERN will upgrade its Inner Tracking System (ITS) detector. The new ITS will consist of seven coaxial cylindrical layers of ALPIDE silicon sensors which are based on Monolithic Active Pixel Sensor (MAPS) technology. We have studied the radiation hardness of ALPIDE sensors using a 30 MeV proton beam provided by the cyclotron U-120M of the Nuclear Physics Institute of the Czech Academy of Sciences in Řež. In this paper, these long-term measurements will be described. After being irradiated up to the total ionization dose 2.7 Mrad and non-ionizing energy loss 2.7 × 10 13 1 MeV n eq · cm - 2 , ALPIDE sensors fulfill ITS upgrade project technical design requirements in terms of detection efficiency and fake-hit rate.


2021 ◽  
Vol 129 (8) ◽  
pp. 085101
Author(s):  
Cheng Shao ◽  
Kensuke Matsuda ◽  
Shenghong Ju ◽  
Yoshifumi Ikoma ◽  
Masamichi Kohno ◽  
...  

Author(s):  
Yuanyuan Yu ◽  
Jiadeng Zhu ◽  
Ke Zeng ◽  
Mengjin Jiang

Abstract text goes here. The abstract should be a single paragraph that summarises the content of the article Compared with nanostructured silicon (Si), Si microparticle (SiMP) has more commercial prospects...


Optik ◽  
2021 ◽  
Vol 231 ◽  
pp. 166431
Author(s):  
Thuy Van Nguyen ◽  
Duc Chinh Vu ◽  
Van Hai Pham ◽  
Thanh Binh Pham ◽  
Van Hoi Pham ◽  
...  

2019 ◽  
Vol 53 (6) ◽  
pp. 800-805 ◽  
Author(s):  
A. V. Kozhemiako ◽  
A. P. Evseev ◽  
Yu. V. Balakshin ◽  
A. A. Shemukhin

2016 ◽  
Vol 148 (1) ◽  
pp. 167-177 ◽  
Author(s):  
Roland W. Bittner ◽  
Katharina Bica ◽  
Helmuth Hoffmann

2001 ◽  
Vol 16 (supp01c) ◽  
pp. 1091-1093 ◽  
Author(s):  
TIMOTHY K. NELSON

The CDF Layer 00 detector consists of single-sided silicon sensors assembled on the beampipe, forming the innermost of eight silicon layers in the CDF detector for Run II of the Fermilab Tevatron. Radiation tolerant p-in-n silicon with 25(50) μm implant(readout) pitch are mounted on a lightweight, cooled support structure and connect to electronics outside the tracking volume via long, fine-pitch cables. Layer 00 will significantly improve the impact parameter resolution and enhance the longevity of the silicon system, benefitting a large portion of the physics program for Run II.


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