scholarly journals AX2: Type of compounds and an overview of theoretically investigated TiO2

2020 ◽  
Vol 9 (2) ◽  
pp. 79-87
Author(s):  
Dušica Jovanović ◽  
Jelena Zagorac ◽  
Branko Matović ◽  
Aleksandra Zarubica

AX 2-type compounds can be ionic, covalent or molecular types of structure, which depends on the size of atoms and the polarization properties. The materials of such type of the structure have different properties that can find the application in various areas of science and industry. Titanium dioxide, as a material of AX 2-type of the structure is a wide band gap semiconductor that has been widely investigated due to its photocatalytic properties and applicability for various purposes, such as the production of solar cells, decontamination of pollutants, elimination of microorganisms, suppression of cancer cells, etc. Experimental and theoretical studies of this metal oxide can give different data on the stability of individual crystalline modifications and their transitions. This study has presented an overview of theoretically examined TiO 2 modifications and current problems that can be encountered (such as various band gap values obtained by different methods and functionals; the difference between the stability of modifications examined on ab initio level and experimentally; the character of chemical bonds and transitions at the specific temperature and pressure conditions…) and overrun by optimal corrections added in calculations.

2020 ◽  
Vol 44 (22) ◽  
pp. 9238-9247
Author(s):  
Xin Ji ◽  
Yong Guo ◽  
Shugui Hua ◽  
Huiyan Li ◽  
Sunchen Zhang

In this paper, the sensitization photodegradation of single and mixed dyes by wide band gap boron nitride (BN, 3.94 eV) under visible light irradiation has been investigated for the first time.


Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  

2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  

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