scholarly journals Synthesis of Hydrogen Getter Zr1-xCox (x=0-1) Alloy Films by Magnetron Co-Sputtering

2020 ◽  
Vol 7 ◽  
pp. 1-10
Author(s):  
Baban P. Dhonge ◽  
Akash Singh ◽  
Arun K. Panda ◽  
Velaga Srihari ◽  
R. Thirumurugesan ◽  
...  
Keyword(s):  
2002 ◽  
Vol 715 ◽  
Author(s):  
Zhi-Feng Huang ◽  
Rashmi C. Desai

AbstractThe morphological and compositional instabilities in the heteroepitaxial strained alloy films have attracted intense interest from both experimentalists and theorists. To understand the mechanisms and properties for the generation of instabilities, we have developed a nonequilibrium, continuum model for the dislocation-free and coherent film systems. The early evolution processes of surface pro.les for both growing and postdeposition (non-growing) thin alloy films are studied through a linear stability analysis. We consider the coupling between top surface of the film and the underlying bulk, as well as the combination and interplay of different elastic effects. These e.ects are caused by filmsubstrate lattice misfit, composition dependence of film lattice constant (compositional stress), and composition dependence of both Young's and shear elastic moduli. The interplay of these factors as well as the growth temperature and deposition rate leads to rich and complicated stability results. For both the growing.lm and non-growing alloy free surface, we determine the stability conditions and diagrams for the system. These show the joint stability or instability for film morphology and compositional pro.les, as well as the asymmetry between tensile and compressive layers. The kinetic critical thickness for the onset of instability during.lm growth is also calculated, and its scaling behavior with respect to misfit strain and deposition rate determined. Our results have implications for real alloy growth systems such as SiGe and InGaAs, which agree with qualitative trends seen in recent experimental observations.


2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.


2021 ◽  
Vol 9 (5) ◽  
pp. 2754-2763
Author(s):  
Kenya Kani ◽  
Hyunsoo Lim ◽  
Andrew E. Whitten ◽  
Kathleen Wood ◽  
Anya J. E. Yago ◽  
...  

The mesoporous RhNi alloy films are synthesized by controlling the concentration of Rh precursor, applied potentials, and pH via the electrochemical co-deposition method with self-assembled polymeric micelles templates for enhancing electrocatalytic properties.


2020 ◽  
Vol 9 (1) ◽  
pp. 751-759 ◽  
Author(s):  
Xinxin Lian ◽  
Yuanjiang Lv ◽  
Haoliang Sun ◽  
David Hui ◽  
Guangxin Wang

AbstractAg nanoparticles/Mo–Ag alloy films with different Ag contents were prepared on polyimide by magnetron sputtering. The effects of Ag contents on the microstructure of self-grown Ag nanoparticles/Mo–Ag alloy films were investigated using XRD, FESEM, EDS and TEM. The Ag content plays an important role in the size and number of uniformly distributed Ag nanoparticles spontaneously formed on the Mo–Ag alloy film surface, and the morphology of the self-grown Ag nanoparticles has changed significantly. Additionally, it is worth noting that the Ag nanoparticles/Mo–Ag alloy films covered by a thin Ag film exhibits highly sensitive surface-enhanced Raman scattering (SERS) performance. The electric field distributions were calculated using finite-difference time-domain analysis to further prove that the SERS enhancement of the films is mainly determined by “hot spots” in the interparticle gap between Ag nanoparticles. The detection limit of the Ag film/Ag nanoparticles/Mo–Ag alloy film for Rhodamine 6G probe molecules was 5 × 10−14 mol/L. Therefore, the novel type of the Ag film/Ag nanoparticles/Mo–Ag alloy film can be used as an ideal SERS-active substrate for low-cost and large-scale production.


2001 ◽  
Vol 670 ◽  
Author(s):  
Min-Joo Kim ◽  
Hyo-Jick Choi ◽  
Dae-Hong Ko ◽  
Ja-Hum Ku ◽  
Siyoung Choi ◽  
...  

ABSTRACTThe silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.


1991 ◽  
Vol 219 ◽  
Author(s):  
Muzhi He ◽  
Guang H. Lin ◽  
J. O'M. Bockris

ABSTRACTAmorphous silicon selenium alloy films were prepared by plasma enhanced chemical vapor deposition with hydrogen dilution. The flow rate ratio of hydrogen to silane was about 8:1. Amorphous silicon selenium alloy was found to have an optical bandgap ranging from 1.7 eV to 2.0 eV depending on the selenium concentration in the films. The light to dark conductivity ratios of the alloy films are ∼ 104. The optical and electrical properties, Urbach tail energy and sub-bandgap photo response spectroscopy of the alloy film were investigated. The film quality of the alloy deposited with hydrogen dilution is greatly improved comparing to that of the alloy film deposited without hydrogen dilution. The electron spin resonance experiment shows that selenium atom is a good dangling bond terminator.


1978 ◽  
Vol 29 (3) ◽  
pp. 311-321 ◽  
Author(s):  
H.S. Randhawa ◽  
L.K. Malhotra ◽  
K.L. Chopra

Sign in / Sign up

Export Citation Format

Share Document