Effect of Random Dopant Fluctuation Depending on the Ion Implantation for the Metal-Oxide-Semiconductor Field Effect Transistor
2011 ◽
Vol 50
(4)
◽
pp. 04DC07
◽
2003 ◽
Vol 42
(Part 1, No. 12)
◽
pp. 7265-7271
◽
2011 ◽
Vol 50
(4)
◽
pp. 04DA02
◽
2010 ◽
Vol 49
(4)
◽
pp. 04DA05
◽
2011 ◽
Vol 50
(4S)
◽
pp. 04DC07
◽
2010 ◽
Vol 49
(4)
◽
pp. 04DC18
◽
Keyword(s):
2011 ◽
Vol 50
(4S)
◽
pp. 04DA02
◽
2006 ◽
Vol 45
(4B)
◽
pp. 2965-2969
◽