Optimized Source/Drain Ion Implantation Conditions for P-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor Formation

Seiichi Shishiguchi; Akira Mineji; Tomoko Matsuda

doi:10.1143/jjap.42.7265

Optimized Source/Drain Ion Implantation Conditions for P-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor Formation

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.7265 ◽

2003 ◽

Vol 42 (Part 1, No. 12) ◽

pp. 7265-7271 ◽

Cited By ~ 2

Author(s):

Seiichi Shishiguchi ◽

Akira Mineji ◽

Tomoko Matsuda

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

Download Full-text

Effect of channeling of halo ion implantation on threshold voltage shift of metal oxide semiconductor field‐effect transistor

Applied Physics Letters ◽

10.1063/1.116237 ◽

1996 ◽

Vol 68 (7) ◽

pp. 938-939 ◽

Cited By ~ 3

Author(s):

Hyunsang Hwang ◽

Dong Hoon Lee ◽

Jae‐Gyung Ahn ◽

Jeong Soo Byun ◽

Dooyoung Yang

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Effect Transistor

Download Full-text

Analytical Approach for Enhancement of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04da02 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DA02 ◽

Cited By ~ 6

Author(s):

Tadashi Yamaguchi ◽

Yoji Kawasaki ◽

Tomohiro Yamashita ◽

Noriko Miura ◽

Mariko Mizuo ◽

...

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistor ◽

Laser Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carbon Doped ◽

Effect Transistor

Download Full-text

Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing as Stress Technique in n-Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04da05 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DA05 ◽

Cited By ~ 9

Author(s):

Hiroshi Itokawa ◽

Kiyotaka Miyano ◽

Yasunori Oshima ◽

Ichiro Mizushima ◽

Kyoichi Suguro

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Recrystallization Annealing ◽

Carbon Incorporation ◽

Effect Transistor ◽

As Stress

Download Full-text

Effect of Random Dopant Fluctuation Depending on the Ion Implantation for the Metal-Oxide-Semiconductor Field Effect Transistor

Journal of IKEEE ◽

10.7471/ikeee.2017.21.1.96 ◽

2017 ◽

Vol 21 (1) ◽

pp. 96-99

Author(s):

Jae Hyun Park ◽

Tae-sig Chang ◽

Minsuk Kim ◽

Sola Woo ◽

Sangsig Kim

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Dopant Fluctuation ◽

Effect Transistor ◽

Random Dopant

Download Full-text

Carbon incorporation into substitutional silicon site by carbon cryo ion implantation and metastable recrystallization annealing as stress technique in n-metal-oxide-semiconductor field-effect transistor

2010 International Workshop on Junction Technology Extended Abstracts ◽

10.1109/iwjt.2010.5475009 ◽

2010 ◽

Cited By ~ 1

Author(s):

Hiroshi Itokawa ◽

Kiyotaka Miyano ◽

Yusuke Oshiki ◽

Hiroyuki Onoda ◽

Masahito Nishigoori ◽

...

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Recrystallization Annealing ◽

Carbon Incorporation ◽

Effect Transistor ◽

As Stress

Download Full-text

Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc18 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC18 ◽

Cited By ~ 13

Author(s):

Yongxun Liu ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Shinich O'uchi ◽

Kunihiro Sakamoto ◽

...

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Low Energy ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

Download Full-text

Analytical Approach for Enhancement of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04da02 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DA02 ◽

Cited By ~ 6

Author(s):

Tadashi Yamaguchi ◽

Yoji Kawasaki ◽

Tomohiro Yamashita ◽

Noriko Miura ◽

Mariko Mizuo ◽

...

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistor ◽

Laser Annealing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carbon Doped ◽

Effect Transistor

Download Full-text

Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.2965 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 2965-2969 ◽

Cited By ~ 1

Author(s):

Hyuckjae Oh ◽

Takeshi Sakaguchi ◽

Takafumi Fukushima ◽

Mitsumasa Koyanagi

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Implantation Damage ◽

Effect Transistor ◽

Elevated Source

Download Full-text

Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

Download Full-text

A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor

Download Full-text