scholarly journals Analytical channel potential model of amorphous InGaZnO thin-film transistors with synchronized symmetric dual-gate

2017 ◽  
Vol 66 (9) ◽  
pp. 097101
Author(s):  
Qin Ting ◽  
Huang Sheng-Xiang ◽  
Liao Cong-Wei ◽  
Yu Tian-Bao ◽  
Deng Lian-Wen
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Potential Model ◽  
Dual Gate ◽  
Channel Potential ◽  
Amorphous Ingazno

QUASI TWO-DIMENSIONAL ANALYSIS OF THE SURFACE POTENTIAL FOR POLY-Si THIN FILM TRANSISTORS BASED ON THE CHANNEL POTENTIAL

2012 ◽  
Vol 26 (10) ◽  
pp. 1250069 ◽  
Author(s):  
ZHEN ZHU ◽  
JUNHAO CHU
Keyword(s):  
Thin Film ◽  
Dimensional Analysis ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Potential Model ◽  
Two Dimensional ◽  
Inversion Region ◽  
Strong Inversion ◽  
Channel Potential ◽  
Drain Bias

A quasi two-dimensional analysis of the surface potential for polycrystalline silicon thin film transistors based on the channel potential is developed. Since the drain bias is taken into account, the surface potential model is proposed to approach the surface potential in the two-dimensional device although this model is developed by solving the one-dimensional Poisson's equation. This model is derived under the relative high gate and low drain biases while devices are operated in the strong inversion region. It is obtained by introducing the channel potential expression containing the drain bias and the normalized channel distance. And this channel-potential-based surface potential model is verified by the two-dimensional-device simulator in various gate voltages, various drain voltages and various channel lengths. This model well characterizes the surface potential distribution along the device's channel in the strong inversion region under the relative high gate and low drain biases.

Characterization of Top-Gate Effects in Amorphous InGaZnO$_{4}$ Thin-Film Transistors Using a Dual-Gate Structure

2012 ◽  
Vol 51 ◽  
pp. 104201 ◽  
Author(s):  
Kazushige Takechi ◽  
Shinnosuke Iwamatsu ◽  
Toru Yahagi ◽  
Yoshiyuki Watanabe ◽  
Seiya Kobayashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Structure ◽  
Dual Gate ◽  
Amorphous Ingazno

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

2013 ◽  
Vol 52 (9R) ◽  
pp. 090205 ◽  
Author(s):  
Runze Zhan ◽  
Chengyuan Dong ◽  
Bo-Ru Yang ◽  
Han-Ping D. Shieh
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Amorphous Ingazno
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