Characterization of Top-Gate Effects in Amorphous InGaZnO$_{4}$ Thin-Film Transistors Using a Dual-Gate Structure

2012 ◽  
Vol 51 ◽  
pp. 104201 ◽  
Author(s):  
Kazushige Takechi ◽  
Shinnosuke Iwamatsu ◽  
Toru Yahagi ◽  
Yoshiyuki Watanabe ◽  
Seiya Kobayashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Structure ◽  
Dual Gate ◽  
Amorphous Ingazno

Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure

2006 ◽  
Vol 9 (11) ◽  
pp. G320 ◽  
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Seong Hyun Kim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Structure ◽  
Dual Gate

Pentacene Organic Thin-Film Transistors with Dual-Gate Structure

2007 ◽  
Vol 124-126 ◽  
pp. 383-386
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrostatic Potential ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gate Structure ◽  
Dual Gate ◽  
Bottom Gate

We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.

Characterization of High-Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors by Low-Frequency Noise Measurements

2013 ◽  
Vol 34 (11) ◽  
pp. 1403-1405 ◽  
Author(s):  
Andreas Tsormpatzoglou ◽  
Nikolaos A. Hastas ◽  
Forough Mahmoudabadi ◽  
Nackbong Choi ◽  
Miltiadis K. Hatalis ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
High Current ◽  
Low Frequency Noise ◽  
Current Stress ◽  
Noise Measurements ◽  
Amorphous Ingazno

scholarly journals Analytical channel potential model of amorphous InGaZnO thin-film transistors with synchronized symmetric dual-gate

2017 ◽  
Vol 66 (9) ◽  
pp. 097101
Author(s):  
Qin Ting ◽  
Huang Sheng-Xiang ◽  
Liao Cong-Wei ◽  
Yu Tian-Bao ◽  
Deng Lian-Wen
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Potential Model ◽  
Dual Gate ◽  
Channel Potential ◽  
Amorphous Ingazno

Pentacene Organic Thin-Film Transistors with Dual-Gate Structure

2007 ◽  
pp. 383-386
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gate Structure ◽  
Dual Gate

Low-Frequency Noise Characterization of Amorphous InGaZnO Thin-Film Transistors with Double-Stack Ga2O3/SiO2 Dielectric

2014 ◽  
Vol 3 (10) ◽  
pp. Q55-Q58 ◽  
Author(s):  
T. H. Chang ◽  
C. J. Chiu ◽  
S. J. Chang ◽  
T. H. Yang ◽  
S. L. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characterization ◽  
Amorphous Ingazno
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