Origin of Fermi-level depinning at TiN/Ge(001) interfaces: first-principles study

2019 ◽  
Vol 58 (6) ◽  
pp. 061007
Author(s):  
Toshiki Nishimoto ◽  
Takashi Nakayama
Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 2343-2349 ◽  
Author(s):  
Ji Il Choi ◽  
Hyo Seok Kim ◽  
Han Seul Kim ◽  
Ga In Lee ◽  
Jeung Ku Kang ◽  
...  

The formation of fullerene carbon nanobuds (CNBs) on carbon nanotube (CNT) caps is energetically more favorable than that on CNT sidewalls. Generally, CNBs based on CNT ends can induce resonant transmissions near the Fermi level.


Author(s):  
Binyuan Zhang ◽  
Fei Guo ◽  
Lei Zhang ◽  
Mingfeng Zhu ◽  
Yisong Zheng

When the Fermi level is shifted to the nearby van Hove singularity by electron doping from its intrinsic position, the ZT value (figure of merit) of the high-buckled plumbene at 100 K is increased by about 250 times.


2018 ◽  
Vol 20 (18) ◽  
pp. 12939-12947 ◽  
Author(s):  
Andrey A. Kistanov ◽  
Yongqing Cai ◽  
Kun Zhou ◽  
Sergey V. Dmitriev ◽  
Yong-Wei Zhang

A proper adoption of the n- or p-type dopants allows for the modulation of the work function, the Fermi level pinning, the band bending, and the photo-adsorbing efficiency near the InSe surface/interface.


RSC Advances ◽  
2017 ◽  
Vol 7 (63) ◽  
pp. 39748-39757 ◽  
Author(s):  
R. E. Mapasha ◽  
M. P. Molepo ◽  
N. Chetty

The Li ion enhances the VCH induced magnetism. The −1 charge doping shifts the Fermi level to the CBM further increasing magnetism. The +1 charge doping shifts the Fermi level to the VBM reducing magnetism.


2020 ◽  
Vol 22 (36) ◽  
pp. 20914-20921 ◽  
Author(s):  
Rajmohan Muthaiah ◽  
Jivtesh Garg

We report novel pathways to significantly enhance the thermal conductivity at nanometer length scales in boron phosphide through biaxial strain.


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